Tetrode Transistor
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Tetrode Transistor
A tetrode transistor is any transistor having four active terminals. Early tetrode transistors There were two types of tetrode transistor developed in the early 1950s as an improvement over the point-contact transistor and the later grown-junction transistor and alloy-junction transistor. Both offered much higher speed than earlier transistors. *Point-contact transistor having two emitters. It became obsolete in the middle 1950s. *Modified grown-junction transistor or alloy-junction transistor having two connections at opposite ends of the base. It achieved its high speed by reducing the input to output capacitance. It became obsolete in the early 1960s with the development of the diffusion transistor. Modern tetrode transistors *Dual emitter transistor, used in two-input transistor-transistor logic gates *Dual collector transistor, used in two-output integrated injection logic gates * Diffused planar silicon bipolar junction transistor, - ''Tetrode transistor memory logic cell'', ...
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Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ...
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Point-contact Transistor
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power. The critical experiment, carried out on December 16, 1947, consisted of a block of germanium, a semiconductor, with two very closely spaced gold contacts held against it by a spring. Brattain attached a small strip of gold foil over the point of a plastic triangle — a configuration which is essentially a point-contact diode. He then carefully sliced through the gold at the tip of the triangle. This produced two electrically isolated gold contacts very close to each other. The piece of germanium used had a surface l ...
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Grown-junction Transistor
The grown-junction transistor was the first type of bipolar ''junction'' transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948 (patent filed June 26, 1948), six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951. An NPN grown-junction transistor is made of a single crystal of semiconductor material which has two PN junctions grown into it. During the growth process, a seed crystal is slowly pulled from a bath of molten semiconductor, which then grows into a rod-shaped crystal ( boule). The molten semiconductor is doped N-type at the start. At a predetermined moment in the growth process a small pellet of a P-type dopant is added, almost immediately followed by a somewhat larger pellet of an N-type dopant. These dopants dissolve in the molten semiconductor changing the type of semiconductor subsequently grown. The resulti ...
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Alloy-junction Transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in 1951 as an improvement over the earlier grown-junction transistor. The usual construction of an alloy-junction transistor is a germanium crystal forming the base, with emitter and collector alloy beads fused on opposite sides. Indium and antimony were commonly used to form the alloy junctions on a bar of N-type germanium. The collector junction pellet would be about 50 mils (thousandths of an inch) in diameter, and the emitter pellet about 20 mils. The base region would be on the order of 1 mil (0.001 inches, 25 μm) thick. There were several types of improved alloy-junction transistors developed over the years that they were manufactured. All types of alloy-junction transistors became obsolete in the early 1960s, with the introduction of the planar transistor which could be mass-produced easily while alloy-junction transistor ...
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Prentice Hall
Prentice Hall was an American major educational publisher owned by Savvas Learning Company. Prentice Hall publishes print and digital content for the 6–12 and higher-education market, and distributes its technical titles through the Safari Books Online e-reference service. History On October 13, 1913, law professor Charles Gerstenberg and his student Richard Ettinger founded Prentice Hall. Gerstenberg and Ettinger took their mothers' maiden names, Prentice and Hall, to name their new company. Prentice Hall became known as a publisher of trade books by authors such as Norman Vincent Peale; elementary, secondary, and college textbooks; loose-leaf information services; and professional books. Prentice Hall acquired the training provider Deltak in 1979. Prentice Hall was acquired by Gulf+Western in 1984, and became part of that company's publishing division Simon & Schuster. S&S sold several Prentice Hall subsidiaries: Deltak and Resource Systems were sold to National Education ...
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Capacitance
Capacitance is the capability of a material object or device to store electric charge. It is measured by the change in charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: ''self capacitance'' and ''mutual capacitance''. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground. Mutual capacitance is measured between two components, and is particularly important in the operations of the capacitor, a device designed for this purpose as an elementary Linear circuit, linear electronic component. Capacitance is a function only of the geometry of the design of the capacitor, e.g., the opposing surface area of the plates and the distance between them, and the permittivity of the dielectric material between the plates. For many dielectric materials, the permittivity and thus the capaci ...
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Diffusion Transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. Diffused-base transistor The earliest diffused junction transistors were diffused-base transistors. These transistors still had alloy emitters and sometimes alloy collectors like the earlier alloy-junction transistors. Only the base was diffused into the substrate. Sometimes the substrate formed the collector, but in transistors like Philco's micro-alloy diffused transistors the substrate was the bulk of the base. Double diffusion At Bell Labs Calvin Souther Fuller produced basic physical understanding of a means of directly forming the emitter, base, and collector by double diffusion. The method was summarized in a history of science at Bell ...
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Integrated Injection Logic
Integrated injection logic (IIL, I2L, or I2L) is a class of digital circuits built with multiple collector bipolar junction transistors (BJT). When introduced it had speed comparable to TTL yet was almost as low power as CMOS, making it ideal for use in VLSI (and larger) integrated circuits. The gates can be made smaller with this logic family than with CMOS because complementary transistors are not needed. Although the logic voltage levels are very close (High: 0.7V, Low: 0.2V), I2L has high noise immunity because it operates by current instead of voltage. I2L was developed in 1971 by Siegfried K. Wiedmann and Horst H. Berger who originally called it merged-transistor logic (MTL). A disadvantage of this logic family is that the gates draw power when not switching unlike with CMOS. Construction The I2L inverter gate is constructed with a PNP common base current source transistor and an NPN common emitter open collector inverter transistor (i.e. they are connected to the ...
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Planar Transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. Diffused-base transistor The earliest diffused junction transistors were diffused-base transistors. These transistors still had alloy emitters and sometimes alloy collectors like the earlier alloy-junction transistors. Only the base was diffused into the substrate. Sometimes the substrate formed the collector, but in transistors like Philco's micro-alloy diffused transistors the substrate was the bulk of the base. Double diffusion At Bell Labs Calvin Souther Fuller produced basic physical understanding of a means of directly forming the emitter, base, and collector by double diffusion. The method was summarized in a history of science at Bell ...
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Integrated Circuit
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny MOSFETs (metal–oxide–semiconductor field-effect transistors) integrate into a small chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to integrated circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones and other home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs such as modern computer ...
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Field-effect Tetrode
The tetrode field-effect transistor or field-effect tetrode is a solid-state semiconductor device, constructed by creating two field-effect channels back-to-back, with a junction between. It is a four-terminal device which does not have specific gate terminals because each channel is a gate for the other, the voltage conditions modulating the current carried by the other channel. Current–voltage relationship Where the voltage on the first channel is V_ - V_ and the voltage on the second channel is V_ - V_, the current in the first channel, I_, and the current in the second channel, I_, are given by: I_ = G_(V_ - V_) \left - \frac \frac \right/math> and I_ = G_(V_ - V_) \left - \frac \frac \right/math>, where the G_ are the low-voltage conductance of the channels and V_p is the pinch-off voltage (assumed to be the same for each channel). Applications The field-effect tetrode can be used as a highly linear electronically variable resistor – resistance is not modulated by ...
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