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Transistor Aging
Transistor aging (sometimes called silicon aging) is the process of silicon transistors developing flaws over time as they are used, degrading performance and reliability, and eventually failing altogether. Despite the name, similar mechanisms may affect transistors made of any kind of semiconductor. Manufacturers compensate for this (as well as manufacturing defects) by running chips at slower speeds than they are initially capable of. Causes The main causes of transistor aging in MOSFETs are ''electromigration'' and ''charge trapping''. Electromigration is the movement of ions caused by momentum from the transfer of electrons in the conductor. This results in degradation of the material, causing intermittent glitches that are very difficult to diagnose, and eventual failure. Charge trapping is related to time-dependent gate oxide breakdown, and manifests as an increase in resistance and threshold voltage (the voltage needed for the transistor to conduct), and a decrease in dr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hot Carrier Injection
Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices. Physics The term “hot carrier injection” usually refers to the effect in MOSFETs, where a carrier is injected from the conducting channel in the silicon substrate to the gate dielectric, which usually is made of silicon dioxide (SiO2). To become “hot” and enter the conduction band of SiO2, an electron must gain a kinetic energy of ~3.2 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IEEE Spectrum
''IEEE Spectrum'' is a magazine edited by the Institute of Electrical and Electronics Engineers. The first issue of ''IEEE Spectrum'' was published in January 1964 as a successor to ''Electrical Engineering''. The magazine contains peer-reviewed articles about technology and science trends affecting business and society. In 2010, ''IEEE Spectrum'' was the recipient of ''Utne Reader'' magazine's Utne Independent Press Award for Science/Technology Coverage. In 2012, ''IEEE Spectrum'' was selected as the winner of the National Magazine Awards' "General Excellence Among Thought Leader Magazines" category. References External links * {{Official website, https://spectrum.ieee.org/ Monthly magazines published in the United States Science and technology magazines published in the United States Engineering magazines Spectrum A spectrum (plural ''spectra'' or ''spectrums'') is a condition that is not limited to a specific set of values but can vary, without gaps, across a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Underclocking
Underclocking, also known as downclocking, is modifying a computer or electronic circuit's timing settings to run at a lower clock rate than is specified. Underclocking is used to reduce a computer's power consumption, increase battery life, reduce heat emission, and it may also increase the system's stability, lifespan/reliability and compatibility. Underclocking may be implemented by the factory, but many computers and components may be underclocked by the end user. Types CPU underclocking For microprocessors, the purpose is generally to decrease the need for heat dissipation devices or decrease the electrical power consumption. This can provide increased system stability in high-heat environments, or can allow a system to run with a lower airflow (and therefore quieter) cooling fan or without one at all. For example, a Pentium 4 processor normally clocked at 3.4 GHz can be "underclocked" to 2 GHz and can then be safely run with reduced fan speeds. This invariably c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
High-temperature Operating Life
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test stresses the IC at an elevated temperature, high voltage and dynamic operation for a predefined period of time. The IC is usually monitored under stress and tested at intermediate intervals. This reliability stress test is sometimes referred to as a "lifetime test", "device life test" or "extended burn in test" and is used to trigger potential failure modes and assess IC lifetime. There are several types of HTOL: * AEC Documents. * JEDEC Standards. * Mil standards.Mil standard Design considerations The main aim of the HTOL is to age the device such that a short experiment will allow the lifetime of the IC to be predicted (e.g. 1,000 HTOL hours shall pre ...[...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Reliability (semiconductor)
Reliability of semiconductor devices can be summarized as follows: # Semiconductor devices are very sensitive to impurities and particles. Therefore, to manufacture these devices it is necessary to manage many processes while accurately controlling the level of impurities and particles. The finished product quality depends upon the many layered relationship of each interacting substance in the semiconductor, including metallization, chip material (list of semiconductor materials) and package. # The problems of micro-processes, and thin films and must be fully understood as they apply to metallization and wire bonding. It is also necessary to analyze surface phenomena from the aspect of thin films. # Due to the rapid advances in technology, many new devices are developed using new materials and processes, and design calendar time is limited due to non-recurring engineering constraints, plus time to market concerns. Consequently, it is not possible to base new designs on the reliabil ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
John Szedon
John is a common English name and surname: * John (given name) * John (surname) John may also refer to: New Testament Works * Gospel of John, a title often shortened to John * First Epistle of John, often shortened to 1 John * Second Epistle of John, often shortened to 2 John * Third Epistle of John, often shortened to 3 John People * John the Baptist (died c. AD 30), regarded as a prophet and the forerunner of Jesus Christ * John the Apostle (lived c. AD 30), one of the twelve apostles of Jesus * John the Evangelist, assigned author of the Fourth Gospel, once identified with the Apostle * John of Patmos, also known as John the Divine or John the Revelator, the author of the Book of Revelation, once identified with the Apostle * John the Presbyter, a figure either identified with or distinguished from the Apostle, the Evangelist and John of Patmos Other people with the given name Religious figures * John, father of Andrew the Apostle and Saint Peter * Pope Joh ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Negative-bias Temperature Instability
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time. It is of immediate concern in p-channel MOS devices (pMOS), since they almost always operate with negative gate-to-source voltage; however, the very same mechanism also affects nMOS transistors when biased in the accumulation regime, i.e. with a negative bias applied to the gate. More specifically, over time positive charges become trapped at the oxide-semiconductor boundary underneath the gate of a MOSFET. These positive charges partially cancel the negative gate voltage ''without'' contributing to conduction through the channel as electron holes in the semiconductor are supposed to. When the gate voltage is removed, the trapped charges dissipate over a time scale of mi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Burst Noise
Burst noise is a type of electronic noise that occurs in semiconductors and ultra-thin gate oxide films. It is also called random telegraph noise (RTN), popcorn noise, impulse noise, bi-stable noise, or random telegraph signal (RTS) noise. It consists of sudden step-like transitions between two or more discrete voltage or current levels, as high as several hundred microvolts, at random and unpredictable times. Each shift in offset voltage or current often lasts from several milliseconds to seconds, and sounds like popcorn popping if hooked up to an audio speaker. Popcorn noise was first observed in early point contact diodes, then re-discovered during the commercialization of one of the first semiconductor op-amps; the 709. No single source of popcorn noise is theorized to explain all occurrences, however the most commonly invoked cause is the random trapping and release of charge carriers at thin film interfaces or at defect sites in bulk semiconductor crystal. In cases wher ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistors
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually construc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Time-dependent Gate Oxide Breakdown
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field). The breakdown is caused by formation of a conducting path through the gate oxide to substrate due to electron tunneling current, when MOSFETs are operated close to or beyond their specified operating voltages. Models The defect generation in the dielectric is a stochastic process. There are two modes of breakdown, intrinsic and extrinsic. Intrinsic breakdown is caused by electrical stress induced defect generation. Extrinsic breakdown is caused by defects induced by the manufacturing process. For Integrated circuits, the time to breakdown is dependent on the thickness of the dielectric (gate oxide) and also on the material type, which is dependent on the manuf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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