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Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Formation Nowatermark
Threshold may refer to: Architecture * Threshold (door), the sill of a door Media * Threshold (1981 film), ''Threshold'' (1981 film) * Threshold (TV series), ''Threshold'' (TV series), an American science fiction drama series produced during 2005-2006 * Threshold (Stargate SG-1), "Threshold" (''Stargate SG-1''), an episode of the TV series * Threshold (Star Trek: Voyager), "Threshold" (''Star Trek: Voyager''), an episode of the TV series * Threshold Entertainment, a Hollywood Intellectual Property Management and Production Company * Threshold Podcast, a podcast focused on long-form reporting of climate justice topics Literature * Threshold (1990 novel), ''Threshold'' (1990 novel), a science fiction novel by Chris and Janet Morris * Threshold (Sara Douglass novel), ''Threshold'' (Sara Douglass novel), a fantasy novel * Threshold (Palmer novel), ''Threshold'' (Palmer novel), a science fiction novel by David R. Palmer * ''Threshold'', the first volume of the collected short fictio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Permittivity
In electromagnetism, the absolute permittivity, often simply called permittivity and denoted by the Greek letter ''ε'' ( epsilon), is a measure of the electric polarizability of a dielectric. A material with high permittivity polarizes more in response to an applied electric field than a material with low permittivity, thereby storing more energy in the material. In electrostatics, the permittivity plays an important role in determining the capacitance of a capacitor. In the simplest case, the electric displacement field D resulting from an applied electric field E is :\mathbf = \varepsilon \mathbf. More generally, the permittivity is a thermodynamic function of state. It can depend on the frequency, magnitude, and direction of the applied field. The SI unit for permittivity is farad per meter (F/m). The permittivity is often represented by the relative permittivity ''ε''r which is the ratio of the absolute permittivity ''ε'' and the vacuum permittivity ''ε''0 :\kappa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Parameters
Electricity is the set of physical phenomena associated with the presence and motion of matter that has a property of electric charge. Electricity is related to magnetism, both being part of the phenomenon of electromagnetism, as described by Maxwell's equations. Various common phenomena are related to electricity, including lightning, static electricity, electric heating, electric discharges and many others. The presence of an electric charge, which can be either positive or negative, produces an electric field. The movement of electric charges is an electric current and produces a magnetic field. When a charge is placed in a location with a non-zero electric field, a force will act on it. The magnitude of this force is given by Coulomb's law. If the charge moves, the electric field would be doing work on the electric charge. Thus we can speak of electric potential at a certain point in space, which is equal to the work done by an external agent in carrying a unit of positiv ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor Modeling
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually const ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Channel Length Modulation
Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling. It also causes distortion in JFET amplifiers. To understand the effect, first the notion of pinch-off of the channel is introduced. The channel is formed by attraction of carriers to the gate, and the current drawn through the channel is nearly a constant independent of drain voltage in saturation mode. However, near the drain, the gate ''and drain'' jointly determine the electric field pattern. Instead of flowing in a channel, beyond the pinch-off point the carriers flow in a subsurface pattern made possible because the drain and the gate both control the current. In the figure at the right, the channel is indicated by a dashed line and beco ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Random Dopant Fluctuation
Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration. In MOSFET transistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage. In newer process technologies RDF has a larger effect because the total number of dopant A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When ...s is fewer, and the addition or deletion of a few impurity atoms can significantly alter transistor properties. RDF is a local form of process variation, meaning that two neighbouring transistors may have significantly different dopant concentrations. Asenov, A. HuangRandom dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study Electron ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Boltzmann Constant
The Boltzmann constant ( or ) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas. It occurs in the definitions of the kelvin and the gas constant, and in Planck's law of black-body radiation and Boltzmann's entropy formula, and is used in calculating thermal noise in resistors. The Boltzmann constant has dimensions of energy divided by temperature, the same as entropy. It is named after the Austrian scientist Ludwig Boltzmann. As part of the 2019 redefinition of SI base units, the Boltzmann constant is one of the seven " defining constants" that have been given exact definitions. They are used in various combinations to define the seven SI base units. The Boltzmann constant is defined to be exactly . Roles of the Boltzmann constant Macroscopically, the ideal gas law states that, for an ideal gas, the product of pressure and volume is proportional to the product of amount of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
90 Nanometer
The 90 nm process refers to the level of MOSFET ( CMOS) fabrication process technology that was commercialized by the 2003–2005 timeframe, by leading semiconductor companies like Toshiba, Sony, Samsung, IBM, Intel, Fujitsu, TSMC, Elpida, AMD, Infineon, Texas Instruments and Micron Technology. The origin of the 90 nm value is historical, it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS). The 193 nm wavelength was introduced by many (but not all) companies for lithography of critical layers mainly during the 90 nm node. Yield issues associated with this transition (due to the use of new photoresists) were reflected in the high costs associated with this transition. Even more significantly, the 300 mm wafer size became mainstream at the 90 nm node. The previous wafer size was 200 mm diameter. History A 90nm silicon MOSFET was fabric ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Elementary Charge
The elementary charge, usually denoted by is the electric charge carried by a single proton or, equivalently, the magnitude of the negative electric charge carried by a single electron, which has charge −1 . This elementary charge is a fundamental physical constant. In the SI system of units, the value of the elementary charge is exactly defined as e = coulombs, or 160.2176634 zeptocoulombs (zC). Since the 2019 redefinition of SI base units, the seven SI base units are defined by seven fundamental physical constants, of which the elementary charge is one. In the centimetre–gram–second system of units (CGS), the corresponding quantity is . Robert A. Millikan and Harvey Fletcher's oil drop experiment first directly measured the magnitude of the elementary charge in 1909, differing from the modern accepted value by just 0.6%. Under assumptions of the then-disputed atomic theory, the elementary charge had also been indirectly inferred to ~3% accuracy from bla ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Subthreshold Leakage
Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between ''on'' and ''off'' states. However, as the drain current in a MOS device varies exponentially with gate voltage, the conduction does not immediately become zero when the threshold voltage is reached. Rather it continues showing an exponential behavior with respect to the subthreshold gate voltage. When plotted against the applied gate voltage, this subthreshold drain current exhibits a log-linear slope, which is defined as the subthreshold slope. Subthreshold slope is used as a figure of merit for the switching efficiency of a transistor.''Physics of Sem ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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