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90 Nanometer
The 90 nm process refers to the level of MOSFET ( CMOS) fabrication process technology that was commercialized by the 2003–2005 timeframe, by leading semiconductor companies like Toshiba, Sony, Samsung, IBM, Intel, Fujitsu, TSMC, Elpida, AMD, Infineon, Texas Instruments and Micron Technology. The origin of the 90 nm value is historical, it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS). The 193 nm wavelength was introduced by many (but not all) companies for lithography of critical layers mainly during the 90 nm node. Yield issues associated with this transition (due to the use of new photoresists) were reflected in the high costs associated with this transition. Even more significantly, the 300 mm wafer size became mainstream at the 90 nm node. The previous wafer size was 200 mm diameter. History A 90nm silicon MOSFET was fabric ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanometre
330px, Different lengths as in respect to the molecular scale. The nanometre (international spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American and British English spelling differences#-re, -er, American spelling) is a units of measurement, unit of length in the International System of Units (SI), equal to one billionth (short scale) of a metre () and to 1000 picometres. One nanometre can be expressed in scientific notation as , and as metres. History The nanometre was formerly known as the millimicrometre – or, more commonly, the millimicron for short – since it is of a micron (micrometre), and was often denoted by the symbol mμ or (more rarely and confusingly, since it logically should refer to a ''millionth'' of a micron) as μμ. Etymology The name combines the SI prefix ''nano-'' (from the Ancient Greek , ', "dwarf") with the parent unit name ''metre'' (from Greek , ', "unit of measurement"). ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thin Film
A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, LEDs, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for both energy generation (e.g. thin-film solar cells) and storage ( thin-film batteries). It is also being ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Atomic Layer Deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials. Introduction During atomic layer deposition a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors or reactants). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses. In each of these pulses the precursor molecules react wit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gurtej Sandhu
Gurtej Singh Sandhu, also known as Gurtej Sandhu, is an inventor in the fields of thin film processes and materials, VLSI and semiconductor device fabrication. He is recognized for being the all-time seventh most prolific inventor as measured by number of U.S. utility patents. Gurtej has 1382 U.S. utility patents . He was Senior Fellow and Director of Advanced Technology Developments at Micron Technology, before becoming Senior Fellow and Vice President of Micron Technology. The publication Kiplinger reports, "Sandhu developed a method of coating microchips with titanium without exposing the metal to oxygen, which would ruin the chips. Initially, he didn't think his idea was a big deal, but now most memory-chip makers use the process." The publication also states that Gurtej earned an electrical engineering degree at the Indian Institute of Technology - Delhi in India and a physics PhD at the University of North Carolina at Chapel Hill. The Institute of Electrical and El ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EE Times
''EE Times'' (''Electronic Engineering Times'') is an electronics industry magazine published in the United States since 1972. EE Times is currently owned by AspenCore, a division of Arrow Electronics since August 2016. Since its acquisition by AspenCore, EE Times has seen major editorial and publishing technology investment and a renewed emphasis on investigative coverage. New features include The Dispatch, which profiles frontline engineers and unpacks the real-life design problems and their solutions in technical yet conversational reporting. Ownership and status ''EE Times'' was launched in 1972 by Gerard G. Leeds of CMP Publications Inc. In 1999, the Leeds family sold CMP to United Business Media for $900 million. After 2000, ''EE Times'' moved more into web publishing. The shift in advertising from print to online began to accelerate in 2007 and the periodical shed staff to adjust to the downturn in revenue. In July 2013, the digital edition migrated to UBM TechWeb's ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Strained-silicon
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster. More recent advances include deposition of strained silicon using metalorganic vapor-phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sour ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon-on-insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Samsung Semiconductor
Samsung Electronics Co., Ltd. (, sometimes shortened to SEC and stylized as SΛMSUNG) is a South Korean multinational electronics corporation headquartered in Yeongtong-gu, Suwon, South Korea. It is the pinnacle of the Samsung chaebol, accounting for 70% of the group's revenue in 2012. Samsung Electronics has played a key role in the group's corporate governance due to circular ownership. Samsung Electronics has assembly plants and sales networks in 74 countries and employs around 290,000 people. It is majority-owned by foreign investors. Samsung Electronics is the world's second-largest technology company by revenue, and its market capitalization stood at US$520.65 billion, the 12th largest in the world. Samsung is a major manufacturer of Electronic Components such as lithium-ion batteries, semiconductors, image sensors, camera modules, and displays for clients such as Apple, Sony, HTC, and Nokia. It is the world's largest manufacturer of mobile phones and smartphon ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NAND Flash
Flash memory is an Integrated circuit, electronic Non-volatile memory, non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR gate, NOR and NAND gate, NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gibibit
The bit is the most basic unit of information in computing and digital communications. The name is a portmanteau of binary digit. The bit represents a logical state with one of two possible values. These values are most commonly represented as either , but other representations such as ''true''/''false'', ''yes''/''no'', ''on''/''off'', or ''+''/''−'' are also commonly used. The relation between these values and the physical states of the underlying storage or device is a matter of convention, and different assignments may be used even within the same device or program. It may be physically implemented with a two-state device. The symbol for the binary digit is either "bit" per recommendation by the IEC 80000-13:2008 standard, or the lowercase character "b", as recommended by the IEEE 1541-2002 standard. A contiguous group of binary digits is commonly called a ''bit string'', a bit vector, or a single-dimensional (or multi-dimensional) ''bit array''. A group of eight bi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EDRAM
Embedded DRAM (eDRAM) is dynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. eDRAM's cost-per-bit is higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications. In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms. Embedding memory on the ASIC or processor allows for much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, larger amounts of memory can be installed on smaller chips if eDRAM is used instead of eSRAM. eDRAM requires additional fab process steps compared with embedded SR ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
_250_nm_by_250_nm_image_of_one-atom-thick_silver_islands_grown_on_palladium_(111)_surface.png "Click for more on -> Thin Film")
