|
Stress Induced Leakage Current
Stress-induced leakage current (SILC) is an increase in the gate leakage current of a MOSFET, used in semiconductor physics. It occurs due to defects created in the gate oxide during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices. Oxide defects The most well-studied defects assisting in the leakage current are those produced by charge trapping Transistor aging (sometimes called silicon aging) is the process of silicon transistors developing flaws over time as they are used, degrading performance and reliability, and eventually failing altogether. Despite the name, similar mechanisms ma ... in the oxide. This model provides a point of attack and has stimulated researchers to develop methods to decrease the rate of charge trapping by mechanisms such as nitrous oxide (N2O) nitridation of the oxide. Semiconductor device defects {{Electronics-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Leakage (semiconductors)
In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode. In capacitors Gradual loss of energy from a charged capacitor is primarily caused by electronic devices attached to the capacitors, such as transistors or diodes, which conduct a small amount of current even when they are turned off. Even though this off current is an order of magnitude less than the current through the device when it is on, the current still slowly discharges the capacitor. Another contributor to leakage from a capacitor is from the undesired imperfection of some dielectric materials used in capacitors, also known as ''dielectric leakage''. It is a result of the dielectric material not being a perfect insulator and having some non-zero conductivit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel. Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungste ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Failure Modes Of Electronics
Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates. Burn-in procedures are used to detect early failures. In semiconductor devices, parasitic structures, irrelevant for normal operation, become important in the context of failures; they can be both a source and protection against failure. Applications such as aerospace systems, life support systems, telecommunications, railway signals, and computers use great numbers of individual electronic componen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Charge Trapping
Transistor aging (sometimes called silicon aging) is the process of silicon transistors developing flaws over time as they are used, degrading performance and reliability, and eventually failing altogether. Despite the name, similar mechanisms may affect transistors made of any kind of semiconductor. Manufacturers compensate for this (as well as manufacturing defects) by running chips at slower speeds than they are initially capable of. Causes The main causes of transistor aging in MOSFETs are ''electromigration'' and ''charge trapping''. Electromigration is the movement of ions caused by momentum from the transfer of electrons in the conductor. This results in degradation of the material, causing intermittent glitches that are very difficult to diagnose, and eventual failure. Charge trapping is related to time-dependent gate oxide breakdown, and manifests as an increase in resistance and threshold voltage (the voltage needed for the transistor to conduct), and a decrease i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nitrous Oxide
Nitrous oxide (dinitrogen oxide or dinitrogen monoxide), commonly known as laughing gas, nitrous, or nos, is a chemical compound, an oxide of nitrogen with the formula . At room temperature, it is a colourless non-flammable gas, and has a slightly sweet scent and taste. At elevated temperatures, nitrous oxide is a powerful oxidiser similar to molecular oxygen. Nitrous oxide has significant medical uses, especially in surgery and dentistry, for its anaesthetic and pain-reducing effects. Its colloquial name, "laughing gas", coined by Humphry Davy, is due to the euphoric effects upon inhaling it, a property that has led to its recreational use as a dissociative anaesthetic. It is on the World Health Organization's List of Essential Medicines. It is also used as an oxidiser in rocket propellants, and in motor racing to increase the power output of engines. Nitrous oxide's atmospheric concentration reached 333 parts per billion (ppb) in 2020, increasing at a rate of abo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
