Stress-induced leakage current (SILC) is an increase in the gate

leakage current In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of cu ...

of a

MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...

, used in

semiconductor A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glas ...

physics. It occurs due to defects created in the

gate oxide The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain ...

during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices.

Oxide defects

The most well-studied defects assisting in the leakage current are those produced by

charge trapping Transistor aging (sometimes called silicon aging) is the process of silicon transistors developing flaws over time as they are used, degrading performance and reliability, and eventually failing altogether. Despite the name, similar mechanisms ma ...

in the oxide. This model provides a point of attack and has stimulated researchers to develop methods to decrease the rate of charge trapping by mechanisms such as nitrous oxide (N₂O) nitridation of the oxide. Semiconductor device defects {{Electronics-stub