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Racetrack Memory
Racetrack memory or domain-wall memory (DWM) is an experimental non-volatile memory device under development at IBM's Almaden Research Center by a team led by physicist Stuart Parkin. In early 2008, a 3-bit version was successfully demonstrated. If it were to be developed successfully, racetrack memory would offer storage density higher than comparable solid-state memory devices like flash memory. Description Racetrack memory uses a spin-coherent electric current to move magnetic domains along a nanoscopic permalloy wire about 200 nm across and 100 nm thick. As current is passed through the wire, the domains pass by magnetic read/write heads positioned near the wire, which alter the domains to record patterns of bits. A racetrack memory device is made up of many such wires and read/write elements. In general operational concept, racetrack memory is similar to the earlier bubble memory of the 1960s and 1970s. Delay-line memory, such as mercury delay lines of the 1940 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Non-volatile Memory
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage or long-term ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DRAM
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRA ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Design Rule Checking
In electronic design automation, a design rule is a geometric constraint imposed on circuit board, semiconductor device, and integrated circuit (IC) designers to ensure their designs function properly, reliably, and can be produced with acceptable yield. Design rules for production are developed by process engineers based on the capability of their processes to realize design intent. Electronic design automation is used extensively to ensure that designers do not violate design rules; a process called design rule checking (DRC). DRC is a major step during physical verification signoff on the design, which also involves LVS (layout versus schematic) checks, XOR checks, ERC ( electrical rule check), and antenna checks. The importance of design rules and DRC is greatest for ICs, which have micro- or nano-scale geometries; for advanced processes, some fabs also insist upon the use of more restricted rules to improve yield. Design rules Design rules are a series of parameters provi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MRAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction and is the simplest st ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Resistive RAM
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and phase-change memory (PCM). CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. By contrast, ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor. Although ReRAM was initially seen as a replacement technology for flash memory, the cost and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ferroelectric RAM
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory. FeRAM's advantages over Flash include: lower power usage, faster write performance and a much greater maximum read/write endurance (about 1010 to 1015 cycles). FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Phase-change Memory
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies (most notably flash memory) with the same capability. Recent research on PCM has been directed towards attempting to find viable material alternatives to the phase-change materi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetoresistive Random-access Memory
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction and is the simplest st ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Universal Memory
Universal memory refers to a computer data storage device combining the cost benefits of DRAM, the speed of SRAM, the non-volatility of flash memory along with infinite durability, and longevity. Such a device, if it ever becomes possible to develop, would have a far-reaching impact on the computer market. Some doubt that such a type of memory will ever be possible. Computers, for most of their recent history, have depended on several different data storage technologies simultaneously as part of their operation. Each one operates at a level in the memory hierarchy where another would be unsuitable. A personal computer might include a few megabytes of fast but volatile and expensive SRAM as the CPU cache, several gigabytes of slower DRAM for program memory, and 128 GB-8 TB of the slow but non-volatile flash memory or 1-10 terabytes of "spinning platters" hard disk drive for long-term storage. For example, a university recommended students entering in 2015–2016 to have a PC w ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wear Leveling
Wear leveling (also written as wear levelling) is a technique Wear leveling techniques for flash memory systems. for prolonging the service life of some kinds of erasable computer storage media, such as flash memory, which is used in solid-state drives (SSDs) and USB flash drives, and phase-change memory. There are several wear leveling mechanisms that provide varying levels of longevity enhancement in such memory systems. The term ''preemptive wear leveling'' (PWL) has been used by Western Digital to describe their preservation technique used on hard disk drives (HDDs) designed for storing audio and video data. However, HDDs generally are not wear-leveled devices in the context of this article. Rationale EEPROM and flash memory media have individually erasable segments, each of which can be put through a limited number of erase cycles before becoming unreliable. This is usually around 3,000/5,000 cycles but many flash devices have one block with a specially extended life of 10 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NAND Flash
Flash memory is an Integrated circuit, electronic Non-volatile memory, non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR gate, NOR and NAND gate, NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
