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Nanoelectronic
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different from ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanotechnology
Nanotechnology, also shortened to nanotech, is the use of matter on an atomic, molecular, and supramolecular scale for industrial purposes. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defined nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm). This definition reflects the fact that quantum mechanical effects are important at this quantum-realm scale, and so the definition shifted from a particular technological goal to a research category inclusive of all types of research and technologies that deal with the special properties of matter which occur below the given size threshold. It is therefore common to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
FinFET
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS (complementary metal-oxide-semiconductor) technology. FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes. It is common for a single FinFET transistor to contain several fins, arranged side by side and all covered ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gordon Moore
Gordon Earle Moore (born January 3, 1929) is an American businessman, engineer, and the co-founder and chairman emeritus of Intel Corporation. He is also the original proponent of Moore's law. As of March 2021, Moore's net worth is reported to be $12.6 billion. Education Moore was born in San Francisco, California, and grew up in nearby Pescadero, where his father was the county sheriff. He attended San José State University for two years before transferring to the University of California, Berkeley, where he received a B.S. degree in chemistry in 1950. In September 1950, Moore enrolled at the California Institute of Technology. While at Caltech, Moore minored in physics and received a Ph.D. in chemistry in 1954. Moore conducted postdoctoral research at the Applied Physics Laboratory at Johns Hopkins University from 1953 to 1956. Scientific career Fairchild Semiconductor Laboratory Moore joined MIT and Caltech alumnus William Shockley at the Shockley Semicond ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Nanowire
Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials. These properties arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. SiNWs are frequently studied towards applications including pho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
3 Nanometer
In semiconductor manufacturing, the 3 nm process is the next die shrink after the 5 nanometer MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. , Taiwanese chip manufacturer TSMC plans to put a 3 nm, semiconductor node termed N3 into volume production by the second half of 2022. An enhanced 3 nm chip process called N3e may start production in 2023. South Korean chipmaker Samsung officially targets the same time frame as TSMC (as of May 2022) with the start of 3 nm production in the first half of 2022 using 3GAE process technology and with 2nd-gen 3 nm process (named 3GAP) to follow in 2023, while according to other sources Samsung's 3 nm process will debut in 2024. American manufacturer Intel plans to start 3 nm production in 2023. Samsung's 3 nm process is based on GAAFET (gate-all-around field-effect transistor) technology, a type of multi-gate MOSFET technology, while TSMC's 3 nm process will still use ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Moore's Law
Moore's law is the observation that the number of transistors in a dense integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship linked to gains from experience in production. The observation is named after Gordon Moore, the co-founder of Fairchild Semiconductor and Intel (and former CEO of the latter), who in 1965 posited a doubling every year in the number of components per integrated circuit, and projected this rate of growth would continue for at least another decade. In 1975, looking forward to the next decade, he revised the forecast to doubling every two years, a compound annual growth rate (CAGR) of 41%. While Moore did not use empirical evidence in forecasting that the historical trend would continue, his prediction held since 1975 and has since become known as a "law". Moore's prediction has been used in the semiconductor industry to g ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark "COS-MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Friction
Friction is the force resisting the relative motion of solid surfaces, fluid layers, and material elements sliding against each other. There are several types of friction: *Dry friction is a force that opposes the relative lateral motion of two solid surfaces in contact. Dry friction is subdivided into ''static friction'' ("stiction") between non-moving surfaces, and ''kinetic friction'' between moving surfaces. With the exception of atomic or molecular friction, dry friction generally arises from the interaction of surface features, known as asperities (see Figure 1). *Fluid friction describes the friction between layers of a viscous fluid that are moving relative to each other. *Lubricated friction is a case of fluid friction where a lubricant fluid separates two solid surfaces. *Skin friction is a component of drag, the force resisting the motion of a fluid across the surface of a body. *Internal friction is the force resisting motion between the elements making up a so ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Drill
A drill is a tool used for making round holes or driving fasteners. It is fitted with a bit, either a drill or driverchuck. Hand-operated types are dramatically decreasing in popularity and cordless battery-powered ones proliferating due to increased efficiency and ease of use. Drills are commonly used in woodworking, metalworking, construction, machine tool fabrication, construction and utility projects. Specially designed versions are made for miniature applications. History Around 35,000 BC, ''Homo sapiens'' discovered the benefits of the application of rotary tools. This would have rudimentarily consisted of a pointed rock being spun between the hands to bore a hole through another material. This led to the hand drill, a smooth stick, that was sometimes attached to flint point, and was rubbed between the palms. This was used by many ancient civilizations around the world including the Mayans. The earliest perforated artifacts, such as bone, ivory, shells, and antler ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power (physics)
In physics, power is the amount of energy transferred or converted per unit time. In the International System of Units, the unit of power is the watt, equal to one joule per second. In older works, power is sometimes called ''activity''. Power is a scalar quantity. Power is related to other quantities; for example, the power involved in moving a ground vehicle is the product of the aerodynamic drag plus traction force on the wheels, and the velocity of the vehicle. The output power of a motor is the product of the torque that the motor generates and the angular velocity of its output shaft. Likewise, the power dissipated in an electrical element of a circuit is the product of the current flowing through the element and of the voltage across the element. Definition Power is the rate with respect to time at which work is done; it is the time derivative of work: P =\frac where is power, is work, and is time. If a constant force F is applied throughout a distance x, the wor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface Area
The surface area of a solid object is a measure of the total area that the surface of the object occupies. The mathematical definition of surface area in the presence of curved surfaces is considerably more involved than the definition of arc length of one-dimensional curves, or of the surface area for polyhedra (i.e., objects with flat polygonal faces), for which the surface area is the sum of the areas of its faces. Smooth surfaces, such as a sphere, are assigned surface area using their representation as parametric surfaces. This definition of surface area is based on methods of infinitesimal calculus and involves partial derivatives and double integration. A general definition of surface area was sought by Henri Lebesgue and Hermann Minkowski at the turn of the twentieth century. Their work led to the development of geometric measure theory, which studies various notions of surface area for irregular objects of any dimension. An important example is the Minkowski cont ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Volume
Volume is a measure of occupied three-dimensional space. It is often quantified numerically using SI derived units (such as the cubic metre and litre) or by various imperial or US customary units (such as the gallon, quart, cubic inch). The definition of length (cubed) is interrelated with volume. The volume of a container is generally understood to be the capacity of the container; i.e., the amount of fluid (gas or liquid) that the container could hold, rather than the amount of space the container itself displaces. In ancient times, volume is measured using similar-shaped natural containers and later on, standardized containers. Some simple three-dimensional shapes can have its volume easily calculated using arithmetic formulas. Volumes of more complicated shapes can be calculated with integral calculus if a formula exists for the shape's boundary. Zero-, one- and two-dimensional objects have no volume; in fourth and higher dimensions, an analogous concept to the normal vo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
