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Gate Dielectric
A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor (such as a MOSFET). In state-of-the-art processes, the gate dielectric is subject to many constraints, including: * Electrically clean interface to the substrate (low density of quantum states for electrons) * High capacitance, to increase the FET transconductance * High thickness, to avoid dielectric breakdown and leakage by quantum tunneling. The capacitance and thickness constraints are almost directly opposed to each other. For silicon-substrate FETs, the gate dielectric is almost always silicon dioxide (called "gate oxide"), since thermal oxide has a very clean interface. However, the semiconductor industry is interested in finding alternative materials with higher dielectric constants, which would allow higher capacitance with the same thickness. History The earliest gate dielectric used in a field-effect transistor was silicon dioxide (SiO2). The silicon and silicondioxid ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dielectric
In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation. Because of dielectric polarisation, positive charges are displaced in the direction of the field and negative charges shift in the direction opposite to the field (for example, if the field is moving parallel to the positive ''x'' axis, the negative charges will shift in the negative ''x'' direction). This creates an internal electric field that reduces the overall field within the dielectric itself. If a dielectric is composed of weakly bonded molecules, those molecules not only become polaris ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thermal Oxidation
In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal–Grove model. Thermal oxidation may be applied to different materials, but most commonly involves the oxidation of silicon substrates to produce silicon dioxide. The chemical reaction Thermal oxidation of silicon is usually performed at a temperature between 800 and 1200 °C, resulting in so called High Temperature Oxide layer (HTO). It may use either water vapor (usually UHP steam) or molecular oxygen as the oxidant; it is consequently called either ''wet'' or ''dry'' oxidation. The reaction is one of the following: :\rm Si + 2H_2O \rightarrow SiO_2 + 2H_ :\rm Si + O_2 \rightarrow SiO_2 \, The oxidizing ambient may also contain several percent of hydrochloric acid (HCl). The chlo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Egyptian Inventions
Egyptian describes something of, from, or related to Egypt. Egyptian or Egyptians may refer to: Nations and ethnic groups * Egyptians, a national group in North Africa ** Egyptian culture, a complex and stable culture with thousands of years of recorded history ** Egyptian cuisine, the local culinary traditions of Egypt * Egypt, the modern country in northeastern Africa ** Egyptian Arabic, the language spoken in contemporary Egypt ** A citizen of Egypt; see Demographics of Egypt * Ancient Egypt, a civilization from c. 3200 BC to 343 BC ** Ancient Egyptians, ethnic people of ancient Egypt ** Ancient Egyptian architecture, the architectural structure style ** Ancient Egyptian cuisine, the cuisine of ancient Egypt ** Egyptian language, the oldest known language of Egypt and a branch of the Afroasiatic language family * Copts, the ethnic Egyptian Christian minority ** Coptic language or Coptic Egyptian, the latest stage of the Egyptian language, spoken in Egypt until the 17th centur ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Arab Inventions
The Arabs (singular: Arab; singular ar, عَرَبِيٌّ, DIN 31635: , , plural ar, عَرَب, DIN 31635: , Arabic pronunciation: ), also known as the Arab people, are an ethnic group mainly inhabiting the Arab world in Western Asia, North Africa, the Horn of Africa, and the western Indian Ocean islands (including the Comoros). An Arab diaspora is also present around the world in significant numbers, most notably in the Americas, Western Europe, Turkey, Indonesia, and Iran. In modern usage, the term "Arab" tends to refer to those who both carry that ethnic identity and speak Arabic as their native language. This contrasts with the narrower traditional definition, which refers to the descendants of the tribes of Arabia. The religion of Islam was developed in Arabia, and Classical Arabic serves as the language of Islamic literature. 93 percent of Arabs are Muslims (the remainder consisted mostly of Arab Christians), while Arab Muslims are only 20 percent of the global Mus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Structures
A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities (" doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called " metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dielectrics
In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation. Because of dielectric polarisation, positive charges are displaced in the direction of the field and negative charges shift in the direction opposite to the field (for example, if the field is moving parallel to the positive ''x'' axis, the negative charges will shift in the negative ''x'' direction). This creates an internal electric field that reduces the overall field within the dielectric itself. If a dielectric is composed of weakly bonded molecules, those molecules not only become polar ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
QBD (electronics)
QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions. Test method Voltage is applied to the MOS structure to force a controlled current through the oxide, i.e. to inject a controlled amount of charge into the dielectric layer. By measuring the time after which the measured voltage drops towards zero (when electrical breakdown occurs) and integrating the injected current over time, the charge needed to break the gate oxide is determined. This gate charge integral is defined as: Q_\text = \in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bell Labs
Nokia Bell Labs, originally named Bell Telephone Laboratories (1925–1984), then AT&T Bell Laboratories (1984–1996) and Bell Labs Innovations (1996–2007), is an American industrial Research and development, research and scientific development S.A. (corporation), company owned by multinational company Nokia. With headquarters located in Murray Hill, New Jersey, Murray Hill, New Jersey, the company operates several laboratories in the United States and around the world. Researchers working at Bell Laboratories are credited with the development of radio astronomy, the transistor, the laser, the photovoltaic cell, the charge-coupled device (CCD), information theory, the Unix operating system, and the programming languages B (programming language), B, C (programming language), C, C++, S (programming language), S, SNOBOL, AWK, AMPL, and others. Nine Nobel Prizes have been awarded for work completed at Bell Laboratories. Bell Labs had its origin in the complex corporate organizat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Mohamed M
Muhammad was an Islamic prophet and a religious and political leader who preached and established Islam. Muhammad and variations may also refer to: *Muhammad (name), a given name and surname, and list of people with the name and its variations Persons with the name Muhammad and no other name *Muhammad (Bavandid ruler), 13th-century Iranian monarch * Muhammad V of Kelantan (born 1969), 15th Yang di-Pertuan Agong and Sultan of Kelantan *Mohammed VI of Morocco (born 1963), King of Morocco *Muhammed VII, Sultan of Granada (1370–1408) * Muhammad VII of Bornu of the Sayfawa dynasty (1731–1747) * Muhammed VIII, Sultan of Granada (1411–1431) * Mohammed VIII of Bornu of the Sayfawa dynasty (1811–1814) Places *Mohammad-e Olya, a village in Fars Province, Iran *Mohammad, Gachsaran, a village in Kohgiluyeh and Boyer-Ahmad Province, Iran *Mohammad, Kohgiluyeh, a village in Kohgiluyeh and Boyer-Ahmad Province, Iran *Mohammad, Sistan and Baluchestan, a village in Sistan and Baluche ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface Passivation
A surface, as the term is most generally used, is the outermost or uppermost layer of a physical object or space. It is the portion or region of the object that can first be perceived by an observer using the senses of sight and touch, and is the portion with which other materials first interact. The surface of an object is more than "a mere geometric solid", but is "filled with, spread over by, or suffused with perceivable qualities such as color and warmth". The concept of surface has been abstracted and formalized in mathematics, specifically in geometry. Depending on the properties on which the emphasis is given, there are several non equivalent such formalizations, that are all called ''surface'', sometimes with some qualifier, such as algebraic surface, smooth surface or fractal surface. The concept of surface and its mathematical abstraction are both widely used in physics, engineering, computer graphics, and many other disciplines, primarily in representing the surface ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel. Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungs ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs ( JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
