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Gate Capacitance
Gate capacitance is the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology. In generations of approximately Dennard scaling of MOSFETs, the capacitance per unit area has increased inversely with device dimensions. Since the gate area has gone down by the square of device dimensions, the gate capacitance of a transistor has gone down in direct proportion with device dimensions. With Dennard scaling, the capacitance per unit of gate width has remained approximately constant; this measurement can include gate–source and gate–drain overlap capacitances. Other scalings are not uncommon; the voltages and gate oxide thicknesses have not always decreased as rapidly as device dimensions, so the gate capacitance per unit area has not increas ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Capacitance
Capacitance is the capability of a material object or device to store electric charge. It is measured by the change in charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: ''self capacitance'' and ''mutual capacitance''. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground. Mutual capacitance is measured between two components, and is particularly important in the operations of the capacitor, a device designed for this purpose as an elementary Linear circuit, linear electronic component. Capacitance is a function only of the geometry of the design of the capacitor, e.g., the opposing surface area of the plates and the distance between them, and the permittivity of the dielectric material between the plates. For many dielectric materials, the permittivity and thus the capaci ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Integrated Circuit
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny MOSFETs (metal–oxide–semiconductor field-effect transistors) integrate into a small chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to integrated circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones and other home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs such as modern computer ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dennard Scaling
Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length. The law, originally formulated for MOSFETs, is based on a 1974 paper co-authored by Robert H. Dennard, after whom it is named. Derivation Dennard's model of MOSFET scaling implies that, with every technology generation: 1. Transistor dimensions could be scaled by −30% (0.7×). This has the following effects simultaneously: * The area of an individual device reduces by 50%, because area is length times width. * The capacitance associated with the device, C, is reduced by 30% (0.7×), because capacitance varies with area over distance. * To keep the electric field unchanged, the voltage, V, is reduced by 30% (0.7×), because voltage is field times length. * Characteristics such as current and transition time are likew ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Relative Permittivity
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field. Permittivity is a material's property that affects the Coulomb force between two point charges in the material. Relative permittivity is the factor by which the electric field between the charges is decreased relative to vacuum. Likewise, relative permittivity is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has vacuum as its dielectric. Relative permittivity is also commonly known as the dielectric constant, a term still used but deprecated by standards organizations in engineering as well as in chemistry. Definition Relative permittivity is typically denoted as (sometimes ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Vacuum Permittivity
Vacuum permittivity, commonly denoted (pronounced "epsilon nought" or "epsilon zero"), is the value of the absolute dielectric permittivity of classical vacuum. It may also be referred to as the permittivity of free space, the electric constant, or the distributed capacitance of the vacuum. It is an ideal (baseline) physical constant. Its CODATA value is: : ( farads per meter), with a relative uncertainty of It is a measure of how dense of an electric field is "permitted" to form in response to electric charges, and relates the units for electric charge to mechanical quantities such as length and force. For example, the force between two separated electric charges with spherical symmetry (in the vacuum of classical electromagnetism) is given by Coulomb's law: :F_\text = \frac \frac Here, ''q''1 and ''q''2 are the charges, ''r'' is the distance between their centres, and the value of the constant fraction 1/4 \pi \varepsilon_0 (known as the Coulomb constant, ''k''e) is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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