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Gallium Arsenide Phosphide
Gallium arsenide phosphide () is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction ''x''. Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with nitrogen (GaAsP:N). See also * Gallium arsenide * Gallium indium arsenide antimonide phosphide * Gallium phosphide * Indium gallium arsenide phosphide * Indium gallium phosphide Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with ... References III-V semiconductors Gallium compounds Arsenides Phosphides III-V compounds Light-emitting ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Material
A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities (" doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Arsenide Phosphide
Indium gallium arsenide phosphide () is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, ''x'' and ''y''. Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. Many devices operating in the near-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as laser transmitters, photodetectors and modulators) in C-band communications systems. Fraunhofer Institute for Solar Energy Systems ISE reported a triple-junction solar cell utilizing . The cell has very high efficiency of 35.9% (claimed to be a record). See also * Indium gallium ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
III-V Compounds
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Phosphides
In chemistry, a phosphide is a compound containing the ion or its equivalent. Many different phosphides are known, with widely differing structures. Most commonly encountered on the binary phosphides, i.e. those materials consisting only of phosphorus and a less electronegative element. Numerous are polyphosphides, which are solids consisting of anionic chains or clusters of phosphorus. Phosphides are known with the majority of less electronegative elements with the exception of Hg, Pb, Sb, Bi, Te, and Po.Von Schnering, H.G. and Hönle , W. (1994) "Phosphides - Solid-state Chemistry" in ''Encyclopedia of Inorganic Chemistry''. R. Bruce King (ed.). John Wiley & Sons Finally, some phosphides are molecular. Binary phosphides Binary phosphides include phosphorus and one other element. An example of a group 1 phosphide is sodium phosphide (). Other notable examples include aluminium phosphide () and calcium phosphide (), which are used as pesticides, exploiting their tendenc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Compounds
Gallium compounds compounds containing the element gallium. These compounds are found primarily in the +3 oxidation state. The +1 oxidation state is also found in some compounds, although it is less common than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be formulated as GaIGaIIICl4; in contrast, the monochloride is unstable above 0 °C, disproportionating into elemental gallium and gallium(III) chloride. Compounds containing Ga–Ga bonds are true gallium(II) compounds, such as GaS (which can be formulated as Ga24+(S2−)2) and the dioxan complex Ga2Cl4(C4H8O2)2.Greenwood and Earnshaw, p. 240 Aqueous chemistry Strong acids dissolve gallium, forming gallium(III) salts such as (gallium nitrate). Aqueous solutions of gallium(III) salts contain the hydrated gallium ion, . Gallium(III) hydroxide, , may be precipitated from gallium(III) solutions by adding ammonia. Dehydrating ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
III-V Semiconductors
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor laser ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Phosphide
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. GaP has a microhardness of 9450 N/mm2, a Debye temperature of , and a thermal expansion coefficient of 5.3 K−1 at room temperature. Sulfur, silicon or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide has applications in optical systems. Its static dielectric constant is 11.1 at room temperature. Its refractive index varies between ~3.2 and 5.0 across the visible range, which is higher than in most other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Indium Arsenide Antimonide Phosphide
Gallium indium arsenide antimonide phosphide ( or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodesRoom temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) and thermophotovoltaic cells.Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534-537 (2011) GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
