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Floating Body Effect
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate. The charge accumulates on this capacitor and may cause adverse effects, for example, opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM in loss of information from the memory cells. It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states. In analog devices, the floating body effect is known as the kink effect. One countermeasure to floating body effect involves use of fully depleted (FD) devices. The insulator layer in FD devices is significantly thinner than the channel depletion width. The charge and thus also the body potential of the transistors ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carrier Recombination
In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes. The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition. Overview Like other solids, semiconductor materials have an electronic band structure determined by the crystal properties of the material ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dynamic Random Access Memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRA ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EE Times
''EE Times'' (''Electronic Engineering Times'') is an electronics industry magazine published in the United States since 1972. EE Times is currently owned by AspenCore, a division of Arrow Electronics since August 2016. Since its acquisition by AspenCore, EE Times has seen major editorial and publishing technology investment and a renewed emphasis on investigative coverage. New features include The Dispatch, which profiles frontline engineers and unpacks the real-life design problems and their solutions in technical yet conversational reporting. Ownership and status ''EE Times'' was launched in 1972 by Gerard G. Leeds of CMP Publications Inc. In 1999, the Leeds family sold CMP to United Business Media for $900 million. After 2000, ''EE Times'' moved more into web publishing. The shift in advertising from print to online began to accelerate in 2007 and the periodical shed staff to adjust to the downturn in revenue. In July 2013, the digital edition migrated to UBM TechWeb's ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Z-RAM
Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon. Z-RAM relies on the floating body effect, an artifact of the silicon on insulator (SOI) process which places transistors in isolated tubs (the transistor body voltages "float" with respect to the wafer substrate beneath the tubs). The floating body effect causes a variable capacitance to appear between the bottom of the tub and the underlying substrate. The floating body effect is usually a parasitic effect that bedevils circuit designs, but also allows a DRAM-like cell to be built without adding a separate capacitor, the floating body effect then taking the place of the conventional capacitor. Because the capacitor is located under the transistor (instead of adjacent to, or above the transistor as in conventional DRAMs), another connotation of the name "Z ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
T-RAM
Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor, Description of the technology is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional 6T SRAM. It was expected that the next generation of T-RAM memory will have the same density as DRAM. This technology exploits the electrical property known as negative differential resistor and is characterized by the way in which its memory cells are built, combining DRAM efficiency in terms of space with that of SRAM in terms of speed. Very similar to t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Microprocessor Report
''Microprocessor Report'' is a newsletter covering the microprocessor industry. The publication is accessible only to paying subscribers. To avoid bias, it does not take advertisements. The publication provides extensive analysis of new high-performance microprocessor chips. It also covers microprocessor design issues, microprocessor-based systems, memory and system logic chips, embedded processors, GPUs, DSPs, and intellectual property (IP) cores. History and profile ''Microprocessor Report'' was first published in 1987 by Michael Slater. Original board members included Bruce Koball, George Morrow, and J H Wharton all of whom served for many years. Originally published monthly in print, since 2000 it has been published weekly online and monthly in print. Slater left MicroDesign Resources (MDR), at the end of 1999. Typical articles describe the internal design and feature set of microprocessors from vendors such as Intel, Broadcom, and Qualcomm. The articles usually compare the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hynix
SK hynix Inc. is a South Korean supplier of dynamic random-access memory (DRAM) chips and flash memory chips. Hynix is the world's second-largest memory chipmaker (after Samsung Electronics) and the world's third-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing sites in Korea, the United States, mainland China and Taiwan. In 2012, when SK Telecom became its major shareholder, Hynix merged with SK Group (the third largest conglomerate in South Korea). The company's major customers include Microsoft, Apple, Asus, Dell, MSI, HP Inc., and Hewlett Packard Enterprise (formerly Hewlett-Packard). Other products that use Hynix memory include DVD players, cellular phones, set-top boxes, personal digital assistants, networking equipment, and hard disk drives. History * 1949: Founded as Gukdo construction. * 1983: Incorporated and renamed as Hyundai Electronics Industries Co., Ltd. * ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Body Cell
Floating may refer to: * a type of dental work performed on horse teeth * use of an isolation tank * the guitar-playing technique where chords are sustained rather than scratched * ''Floating'' (play), by Hugh Hughes * Floating (psychological phenomenon), slipping into altered states * Floating exchange rate, a market-valued currency * Floating voltage, and floating ground, a voltage or ground in an electric circuit that is not connected to the Earth or another reference voltage * Floating point, a representation in computing of rational numbers most commonly associated with the IEEE 754 standard * ''Floating'' (film), a 1997 American drama film Albums and songs * ''Floating'' (Eloy album) (1974) * ''Floating'' (Ketil Bjørnstad album) (2005) * ''Floating'' (EP), a 1991 EP by Bill Callahan * "Floating" (The Moody Blues song) (1969) * "Floating" (Megan Rochell song) (2006) * "Floating" (Jape song) (2004) * "Floating", a song by Jolin Tsai from the 2000 album '' Don't Stop' ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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