|
Electrical Junction
{{Unreferenced, date=June 2019, bot=noref (GreenC bot) An electrical junction is a point or area where multiple conductors or semiconductors make physical contact. Electrical junctions types include thermoelectricity junctions, metal–semiconductor junctions and p–n junctions. Junctions are either rectifying or non-rectifying. Non-rectifying junctions are called ohmic contacts. Electronic components employing rectifying junctions include p–n diodes, Schottky diodes and bipolar junction transistors. (Electrical outlets ) See also * Break junction * Depletion region, also called junction region ** Junction voltage * Heterojunction * Homojunction * Josephson junction * Nodal analysis * p–n junction isolation p–n junction isolation is a method used to electrically isolate electronic components, such as transistors, on an integrated circuit (IC) by surrounding the components with reverse biased p–n junctions. Introduction By surrounding a transis ... Electricity ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thermoelectricity
The thermoelectric effect is the direct conversion of temperature differences to electric voltage and vice versa via a thermocouple. A thermoelectric device creates a voltage when there is a different temperature on each side. Conversely, when a voltage is applied to it, heat is transferred from one side to the other, creating a temperature difference. At the atomic scale, an applied temperature gradient causes charge carriers in the material to diffuse from the hot side to the cold side. This effect can be used to generate electricity, measure temperature or change the temperature of objects. Because the direction of heating and cooling is affected by the applied voltage, thermoelectric devices can be used as temperature controllers. The term "thermoelectric effect" encompasses three separately identified effects: the Seebeck effect, Peltier effect, and Thomson effect. The Seebeck and Peltier effects are different manifestations of the same physical process; textbooks may r ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region. The depletion region is so named because it is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P–n Junction Isolation
p–n junction isolation is a method used to electrically isolate electronic components, such as transistors, on an integrated circuit (IC) by surrounding the components with reverse biased p–n junctions. Introduction By surrounding a transistor, resistor, capacitor or other component on an IC with semiconductor material which is doped using an opposite species of the substrate dopant, and connecting this surrounding material to a voltage which reverse-biases the p–n junction that forms, it is possible to create a region which forms an electrically isolated "well" around the component. Operation Assume that the semiconductor wafer is p-type material. Also assume a ring of n-type material is placed around a transistor, and placed beneath the transistor. If the p-type material within the n-type ring is now connected to the negative terminal of the power supply and the n-type ring is connected to the positive terminal, the 'holes A hole is an opening in or through a part ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nodal Analysis
In electric circuits analysis, nodal analysis, node-voltage analysis, or the branch current method is a method of determining the voltage (potential difference) between "nodes" (points where elements or branches connect) in an electrical circuit in terms of the branch currents. In analyzing a circuit using Kirchhoff's circuit laws, one can either do nodal analysis using Kirchhoff's current law (KCL) or mesh analysis using Kirchhoff's voltage law (KVL). Nodal analysis writes an equation at each electrical node, requiring that the branch currents incident at a node must sum to zero. The branch currents are written in terms of the circuit node voltages. As a consequence, each branch constitutive relation must give current as a function of voltage; an admittance representation. For instance, for a resistor, Ibranch = Vbranch * G, where G (=1/R) is the admittance (conductance) of the resistor. Nodal analysis is possible when all the circuit elements' branch constitutive relations have ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Josephson Effect
In physics, the Josephson effect is a phenomenon that occurs when two superconductors are placed in proximity, with some barrier or restriction between them. It is an example of a macroscopic quantum phenomenon, where the effects of quantum mechanics are observable at ordinary, rather than atomic, scale. The Josephson effect has many practical applications because it exhibits a precise relationship between different physics quantities, such as voltage and frequency, facilitating highly accurate measurements. The Josephson effect produces a current, known as a supercurrent, that flows continuously without any voltage applied, across a device known as a Josephson junction (JJ). These consist of two or more superconductors coupled by a weak link. The weak link can be a thin insulating barrier (known as a superconductor–insulator–superconductor junction, or S-I-S), a short section of non-superconducting metal (S-N-S), or a physical constriction that weakens the superconductivit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Homojunction
{{unsourced, date=December 2007 A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping. In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as silicon, this is called a p–n junction. This is not a necessary condition as the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a heterojunction. An n-type to n-type junction, for example, would be considered a homojunction even if the doping levels are different. The different doping level will cause band bending, and a depletion region will be formed at the interface, as shown in the figure to the right. See also * Transistor * p–n junction * Band bending * Doping (semiconductor) In semiconductor production, doping is the intentional introducti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterojunction
A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials. Manufacture and applications Heterojunction manufacturing generally requires the use of mo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Junction Voltage
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region. The depletion region is so named because it is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Break Junction
A break junction is an electronic device which consists of two metal wires separated by a very thin gap, on the order of the inter-atomic spacing (less than a nanometer). This can be done by physically pulling the wires apart or through chemical etching or electromigration. As the wire breaks, the separation between the electrodes can be indirectly controlled by monitoring the electrical resistance of the junction. After the gap is formed, its width can often be controlled by bending the substrate that the metal contacts lie on. The gap can be controlled to a precision of picometers. A typical conductance versus time trace during the breaking process (conductance is simply current divided by applied voltage bias) shows two regimes. First is a regime where the break junction comprises a quantum point contact. In this regime conductance decreases in steps equal to the conductance quantum G_Q=2e^2/h which is expressed through the electron charge (−''e'') and Planck's constant h. The ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal–semiconductor Junction
In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.) Metal–semiconductor junctions are crucial to the operation of all semiconductor devices. Usually an ohmic contact is desired, so that electrical charge can be conducted easily between the active region of a transistor and the external circuitry. Occasionally however a Schottky barrier is useful, as in Schottky diodes, Schottky transistors, and metal–semiconductor field effect transist ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Diode
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency. History Walter H. Schottky (1886–1976) in 1914, discovered an irregularity in the emission of thermions in a vacuum tube, now known as the Schottky effect. Construction A metal–semiconductor junction is formed between a metal ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
_Cross-section.svg "Click for more on -> Bipolar Junction Transistor")
