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Depletion-mode
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage. In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3&nb ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion-load NMOS Logic
In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS (n-type metal-oxide semiconductor) logic families that needed more than one different power supply voltage. Although manufacturing these integrated circuits required additional processing steps, improved switching speed and the elimination of the extra power supply made this logic family the preferred choice for many microprocessors and other logic elements. Depletion-mode n-type MOSFETs as load transistors allow single voltage operation and achieve greater speed than possible with pure enhancement-load devices. This is partly because the depletion-mode MOSFETs can be a better current source approximation than the simpler enhancement-mode transistor can, especially when no extra voltage is available (one of the reasons early PMOS and NMOS chips demanded several voltages). The inclusion of depletion-mode NMOS transistors in the manuf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
FET Comparison
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1925 an ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor Types
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually const ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Zilog Z80
The Z80 is an 8-bit microprocessor introduced by Zilog as the startup company's first product. The Z80 was conceived by Federico Faggin in late 1974 and developed by him and his 11 employees starting in early 1975. The first working samples were delivered in March 1976, and it was officially introduced on the market in July 1976. With the revenue from the Z80, the company built its own chip factories and grew to over a thousand employees over the following two years. The Zilog Z80 is a software-compatible extension and enhancement of the Intel 8080 and, like it, was mainly aimed at embedded systems. Although used in that role, the Z80 also became one of the most widely used CPUs in desktop computers and home computers from the 1970s to the mid-1980s. It was also common in military applications, musical equipment such as synthesizers (like the Roland Jupiter-8), and coin-operated arcade games of the late 1970s and early 1980s, including '' Pac-Man''. Zilog licensed the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JFET
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is ''pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred to as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Springer Science & Business Media
Springer Science+Business Media, commonly known as Springer, is a German multinational publishing company of books, e-books and peer-reviewed journals in science, humanities, technical and medical (STM) publishing. Originally founded in 1842 in Berlin, it expanded internationally in the 1960s, and through mergers in the 1990s and a sale to venture capitalists it fused with Wolters Kluwer and eventually became part of Springer Nature in 2015. Springer has major offices in Berlin, Heidelberg, Dordrecht, and New York City. History Julius Springer founded Springer-Verlag in Berlin in 1842 and his son Ferdinand Springer grew it from a small firm of 4 employees into Germany's then second largest academic publisher with 65 staff in 1872.Chronology ". Springer Science+Business Media. In 1964, Springer expanded its business internationa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thin-film Transistors
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is thin relative to the plane of the device. TFTs are grown on a supporting (but non-conducting) substrate. A common substrate is glass, because the traditional application of TFTs is in liquid-crystal displays (LCDs). This differs from the conventional bulk metal oxide field effect transistor (MOSFET), where the semiconductor material typically ''is'' the substrate, such as a silicon wafer. Design and Manufacture TFTs can be fabricated with a wide variety of semiconductor materials. Because it is naturally abundant and well understood, amorphous or polycrystalline silicon was historically used as the semiconductor layer. However, because of the low mobility of amorphous silicon and the large device-to-device variations found in polycrystalline silicon, other materials have been studied for use in TFTs. These include cadmium selenide, metal oxides such as indium gallium zinc o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Arsenide
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Westinghouse Electric
The Westinghouse Electric Corporation was an American manufacturing company founded in 1886 by George Westinghouse. It was originally named "Westinghouse Electric & Manufacturing Company" and was renamed "Westinghouse Electric Corporation" in 1945. The company acquired the CBS television network in 1995 and was renamed "CBS Corporation" until being acquired by Viacom in 1999, a merger completed in April 2000. The CBS Corporation name was later reused for one of the two companies resulting from the split of Viacom in 2006. The Westinghouse trademarks are owned by Westinghouse Electric Corporation, and were previously part of Westinghouse Licensing Corporation. The nuclear power business, Westinghouse Electric Company, was spun off from the Westinghouse Electric Corporation in 1999. History Westinghouse Electric was founded by George Westinghouse in Pittsburgh, Pennsylvania, on January 8, 1886. The firm became active in developing electric infrastructure throughout the U ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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