Band-structure
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Band-structure
In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called '' band gaps'' or ''forbidden bands''). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules. Band theory has been successfully used to explain many physical properties of solids, such as electrical resistivity and optical absorption, and forms the foundation of the understanding of all solid-state devices (transistors, solar cells, etc.). Why bands and band gaps occur The electrons of a single, isolated atom occupy atomic orbitals each of which has a discrete energy level. When two or more atoms join together to form a molecule, their atomic orbitals overlap and hybridize. Similarly, if a large number ''N'' of identical a ...
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Solid-state Physics
Solid-state physics is the study of rigid matter, or solids, through methods such as quantum mechanics, crystallography, electromagnetism, and metallurgy. It is the largest branch of condensed matter physics. Solid-state physics studies how the large-scale properties of solid materials result from their atomic-scale properties. Thus, solid-state physics forms a theoretical basis of materials science. It also has direct applications, for example in the technology of transistors and semiconductors. Background Solid materials are formed from densely packed atoms, which interact intensely. These interactions produce the mechanical (e.g. hardness and Elasticity (physics), elasticity), Heat conduction, thermal, Electrical conduction, electrical, Magnetism, magnetic and Crystal optics, optical properties of solids. Depending on the material involved and the conditions in which it was formed, the atoms may be arranged in a regular, geometric pattern (crystal, crystalline solids, ...
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Band Gap
In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from th ...
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Electric-field Screening
In physics, screening is the damping of electric fields caused by the presence of mobile charge carriers. It is an important part of the behavior of charge-carrying fluids, such as ionized gases (classical plasmas), electrolytes, and charge carriers in electronic conductors (semiconductors, metals). In a fluid, with a given permittivity , composed of electrically charged constituent particles, each pair of particles (with charges and ) interact through the Coulomb force as \mathbf = \frac\hat, where the vector is the relative position between the charges. This interaction complicates the theoretical treatment of the fluid. For example, a naive quantum mechanical calculation of the ground-state energy density yields infinity, which is unreasonable. The difficulty lies in the fact that even though the Coulomb force diminishes with distance as , the average number of particles at each distance is proportional to , assuming the fluid is fairly isotropic. As a result, a charge fl ...
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Electrical Conductance
The electrical resistance of an object is a measure of its opposition to the flow of electric current. Its reciprocal quantity is , measuring the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with mechanical friction. The SI unit of electrical resistance is the ohm (), while electrical conductance is measured in siemens (S) (formerly called the 'mho' and then represented by ). The resistance of an object depends in large part on the material it is made of. Objects made of electrical insulators like rubber tend to have very high resistance and low conductance, while objects made of electrical conductors like metals tend to have very low resistance and high conductance. This relationship is quantified by resistivity or conductivity. The nature of a material is not the only factor in resistance and conductance, however; it also depends on the size and shape of an object because these properties are extensive rather than inten ...
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Capacitance
Capacitance is the capability of a material object or device to store electric charge. It is measured by the change in charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: ''self capacitance'' and ''mutual capacitance''. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground. Mutual capacitance is measured between two components, and is particularly important in the operations of the capacitor, a device designed for this purpose as an elementary Linear circuit, linear electronic component. Capacitance is a function only of the geometry of the design of the capacitor, e.g., the opposing surface area of the plates and the distance between them, and the permittivity of the dielectric material between the plates. For many dielectric materials, the permittivity and thus the capaci ...
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Band Bending
In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes. The band bending concept was first developed in 1938 when Mott, Davidov and Schottky all published theories of the rectifying effect of metal-semiconductor contacts. The use of semiconductor junctions sparked the computer revolution in 1990. Devices such as the diode, the transistor, the photocell and many more still play an important role in technology. Qualitative description Band bending can be induced by several types of contact. In this section metal-semiconductor contact, surface state, applied bias and adsorption ...
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Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ...
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