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Avalanche Breakdown
Avalanche breakdown (or avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche. The avalanche process occurs when carriers in the transition region are accelerated by the electric field to energies sufficient to create mobile or free electron-hole pairs via collisions with bound electrons. Explanation Materials conduct electricity if they contain mobile charge carriers. There are two types of charge carriers in a semiconductor: free electrons (mobile electrons) and electron holes (mobile holes which are missing electrons from the normally occupied electron states). A normally bound electron (e.g., in a bond) in a reverse-biased diode may break loose due to a thermal fluctuation or excitation, creating a mobile electron-hole pair. If there is a voltage gradient (el ...
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I-V Curve For A Zener Diode
IV may refer to: Businesses and organizations * Immigration Voice, an activist organization *Industrievereinigung, Federation of Austrian Industry *Intellectual Ventures, a privately held intellectual property company * InterVarsity Christian Fellowship *Irish Volunteers, a military organization *Italia Viva, an Italian centrist political party, led by former prime minister Matteo Renzi Music * Subdominant, in music theory Recordings * ''IV'' (The 1975 EP), 2013 * ''IV'' (The Aggrolites album), 2009 * ''IV'' (Angband album), 2020 * ''IV'' (BadBadNotGood album), 2016 * ''IV'' (Black Mountain album), 2016 * ''IV'' (Cypress Hill album), 1998 * ''IV'' (Diamond Rio album), 1996 * ''IV'' (Goatsnake album), 1998 * ''IV'' (Godsmack album), 2006 * ''IV'' (Hiroyuki Sawano album), 2021 * ''I.V.'' (Loma Prieta album), 2012 * ''IV'' (The Lookouts album), 1990 * ''IV'' (Maylene and the Sons of Disaster album), 2011 * ''IV'' (Ton Steine Scherben album), 1981 * ''IV'' (The Stranglers album), 1980 ...
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Electron Avalanche
An electron avalanche is a process in which a number of free electrons in a transmission medium are subjected to strong acceleration by an electric field and subsequently collide with other atoms of the medium, thereby ionizing them (impact ionization). This releases additional electrons which accelerate and collide with further atoms, releasing more electrons—a chain reaction. In a gas, this causes the affected region to become an Electrical resistivity and conductivity, electrically conductive plasma (physics), plasma. The avalanche effect was discovered by John Sealy Townsend in his work between 1897 and 1901, and is also known as the Townsend discharge. Electron avalanches are essential to the dielectric breakdown process within gases. The process can culminate in corona discharges, streamer discharge , streamers, leader (spark), leaders, or in a electric spark, spark or continuous electric arc, arc that completely bridges the gap between the electrical conductors that a ...
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Electrons
The electron ( or ) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no known components or substructure. The electron's mass is approximately 1/1836 that of the proton. Quantum mechanical properties of the electron include an intrinsic angular momentum ( spin) of a half-integer value, expressed in units of the reduced Planck constant, . Being fermions, no two electrons can occupy the same quantum state, in accordance with the Pauli exclusion principle. Like all elementary particles, electrons exhibit properties of both particles and waves: They can collide with other particles and can be diffracted like light. The wave properties of electrons are easier to observe with experiments than those of other particles like neutrons and protons because electrons have a lower mass and hence a longer de Broglie wav ...
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Electron Holes
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle which is the lack of an electron at a position where one could exist in an atom or atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explain the low electron-electron scattering-rate in crystals (metals, semiconductors). ...
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Diode
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction, from cathode to plate. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used. Among many uses, diodes are found in ...
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Avalanche Diode
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers, which in turn create more ionization. Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode. The Zener diode exhibits an apparently similar effect in addition to Zener breakdown. Both effects are present in any such diode, but one usually dominates the other. Avalanche diodes are optimized for avalanche effect, so they exhibit small but significant voltage drop under breakdown conditions, unlike Zener ...
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Zener Diode
A Zener diode is a special type of diode designed to reliably allow current to flow "backwards" (inverted polarity) when a certain set reverse voltage, known as the ''Zener voltage'', is reached. Zener diodes are manufactured with a great variety of Zener voltages and some are even variable. Some Zener diodes have a sharp, highly doped p–n junction with a low Zener voltage, in which case the reverse conduction occurs due to electron quantum tunnelling in the short space between p and n regions − this is known as the Zener effect, after Clarence Zener. Diodes with a higher Zener voltage have a more gradual junction and their mode of operation also involves avalanche breakdown. Both breakdown types are present in Zener diodes with the Zener effect predominating at lower voltages and avalanche breakdown at higher voltages. They are used to generate low-power stabilized supply rails from a higher voltage and to provide reference voltages for circuits, especially stabilized powe ...
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Current Crowding
Current crowding (also current crowding effect, or CCE) is a nonuniform distribution of current density through a conductor or semiconductor, especially in the vicinity of electrical contacts and over PN junctions. Current crowding is one of the factors limiting the efficiency of light-emitting diodes. Materials with low electron mobility, mobility of charge carriers (e.g., aluminium gallium indium phosphide (AlGaInP)) are especially prone to current crowding phenomena. It is the dominant loss mechanism in some LEDs, where the current densities, especially around the P-side contacts, reach an area of the emission characteristics with lower brightness/current efficiency. Current crowding can lead to localized overheating and formation of thermal hotspots, in catastrophic cases leading to thermal runaway. Nonhomogenous distribution of current also aggravates electromigration effects and the formation of voids (see, e.g., the Kirkendall effect). Formation of voids causes localized nonh ...
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Breakdown Voltage
The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to experience electrical breakdown and become electrically conductive. For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a ''forward breakdown voltage''. Electrical breakdown Materials are often classified as conductors or insulators based on their resistivity. A conductor is a substance which contains many mobile charged particles called charge carriers which are free to move about inside the material. An electric field is created across a piece of the material by applying a voltage difference between electrical contacts on different sides of the material. The force of the field causes the charge carriers within the material to move, creating an electric current from the positive contact to the negative contact. For example, in metals one or more of the negatively cha ...
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Hysteresis
Hysteresis is the dependence of the state of a system on its history. For example, a magnet may have more than one possible magnetic moment in a given magnetic field, depending on how the field changed in the past. Plots of a single component of the moment often form a loop or hysteresis curve, where there are different values of one variable depending on the direction of change of another variable. This history dependence is the basis of memory in a hard disk drive and the remanence that retains a record of the Earth's magnetic field magnitude in the past. Hysteresis occurs in ferromagnetic and ferroelectric materials, as well as in the deformation of rubber bands and shape-memory alloys and many other natural phenomena. In natural systems it is often associated with irreversible thermodynamic change such as phase transitions and with internal friction; and dissipation is a common side effect. Hysteresis can be found in physics, chemistry, engineering, biology, and economics. I ...
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QBD (electronics)
QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions. Test method Voltage is applied to the MOS structure to force a controlled current through the oxide, i.e. to inject a controlled amount of charge into the dielectric layer. By measuring the time after which the measured voltage drops towards zero (when electrical breakdown occurs) and integrating the injected current over time, the charge needed to break the gate oxide is determined. This gate charge integral is defined as: Q_\text = \in ...
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Single-photon Avalanche Diode
A single-photon avalanche diode (SPAD) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours. As with photodiodes and APDs, a SPAD is based around a semi-conductor p-n junction that can be illuminated with ionizing radiation such as gamma, x-rays, beta and alpha particles along with a wide portion of the electromagnetic spectrum from ultraviolet (UV) through the visible wavelengths and into the infrared (IR). In a photodiode, with a low reverse bias voltage, the leakage current changes linearly with absorption of photons, i.e. the liberation of current carriers (electrons and/or holes) due to the internal photoelectric effect. However, in a SPAD, the reverse bias is so high that a phenomenon called impact ionisation occurs which is able to cause an avalanche current to develop. Simply, a photo-generated carrier is accelerated by the electric field in the device to ...
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