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Zener Diode (JAN 1N6316) In QuadroMELF Package
A Zener diode is a special type of diode designed to reliably allow current to flow "backwards" (inverted polarity) when a certain set reverse voltage, known as the ''Zener voltage'', is reached. Zener diodes are manufactured with a great variety of Zener voltages and some are even variable. Some Zener diodes have a sharp, highly doped p–n junction with a low Zener voltage, in which case the reverse conduction occurs due to electron quantum tunnelling in the short space between p and n regions − this is known as the Zener effect, after Clarence Zener. Diodes with a higher Zener voltage have a more gradual junction and their mode of operation also involves avalanche breakdown. Both breakdown types are present in Zener diodes with the Zener effect predominating at lower voltages and avalanche breakdown at higher voltages. They are used to generate low-power stabilized supply rails from a higher voltage and to provide reference voltages for circuits, especially stabilized p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Passivity (engineering)
Passivity is a property of engineering systems, most commonly encountered in analog electronics and control systems. Typically, analog designers use ''passivity'' to refer to incrementally passive components and systems, which are incapable of power gain. In contrast, control systems engineers will use ''passivity'' to refer to thermodynamically passive ones, which consume, but do not produce, energy. As such, without context or a qualifier, the term ''passive'' is ambiguous. An electronic circuit consisting entirely of passive components is called a passive circuit, and has the same properties as a passive component. If a component is ''not'' passive, then it is an active component. Thermodynamic passivity In control systems and circuit network theory, a passive component or circuit is one that consumes energy, but does not produce energy. Under this methodology, voltage and current sources are considered active, while resistors, capacitors, inductors, transistors, tunnel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antifuse
An antifuse is an electrical device that performs the opposite function to a fuse. Whereas a fuse starts with a low resistance and is designed to permanently break an electrically conductive path (typically when the current through the path exceeds a specified limit), an antifuse starts with a high resistance, and programming it converts it into a permanent electrically conductive path (typically when the voltage across the antifuse exceeds a certain level). This technology has many applications. Christmas tree lights Antifuses are best known for their use in mini-light (or miniature) style low-voltage Christmas tree lights. Ordinarily (for operation from mains voltages), the lamps are wired in series. (The larger, traditional, C7 and C9 style lights are wired in parallel and are rated to operate directly at mains voltage.) Because the series string would be rendered inoperable by a single lamp failing, each bulb has an antifuse installed within it. When the bulb blows, the entire ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Radiation Damage
Radiation damage is the effect of ionizing radiation on physical objects including non-living structural materials. It can be either detrimental or beneficial for materials. Radiobiology is the study of the action of ionizing radiation on living things, including the health effects of radiation in humans. High doses of ionizing radiation can cause damage to living tissue such as radiation burning and harmful mutations such as causing cells to become cancerous, and can lead to health problems such as radiation poisoning. Causes This radiation may take several forms: *Cosmic rays and subsequent energetic particles caused by their collision with the atmosphere and other materials. *Radioactive daughter products (radioisotopes) caused by the collision of cosmic rays with the atmosphere and other materials, including living tissues. *Energetic particle beams from a particle accelerator. *Energetic particles or electro-magnetic radiation (X-rays) released from collisions of such part ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hot Carrier
Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices. Physics The term “hot carrier injection” usually refers to the effect in MOSFETs, where a carrier is injected from the conducting channel in the silicon substrate to the gate dielectric, which usually is made of silicon dioxide (SiO2). To become “hot” and enter the conduction band of SiO2, an electron must gain a kinetic energy of ~3.2 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
BiCMOS
Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal-oxide-semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions. Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is excellent for constructing large numbers of low-power logic gates. In a BiCMOS process the doping profile and other process features may be tilted to favour either the CMOS or the bipolar devices. For example GlobalFoundries offer a basic 180 nm BiCMOS7WL process and several ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NPN Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Tunneling
In physics, a quantum (plural quanta) is the minimum amount of any physical entity (physical property) involved in an interaction. The fundamental notion that a physical property can be "quantized" is referred to as "the hypothesis of quantization". This means that the magnitude of the physical property can take on only discrete values consisting of integer multiples of one quantum. For example, a photon is a single quantum of light (or of any other form of electromagnetic radiation). Similarly, the energy of an electron bound within an atom is quantized and can exist only in certain discrete values. (Atoms and matter in general are stable because electrons can exist only at discrete energy levels within an atom.) Quantization is one of the foundations of the much broader physics of quantum mechanics. Quantization of energy and its influence on how energy and matter interact (quantum electrodynamics) is part of the fundamental framework for understanding and describing nature. E ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron
The electron ( or ) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no known components or substructure. The electron's mass is approximately 1/1836 that of the proton. Quantum mechanical properties of the electron include an intrinsic angular momentum ( spin) of a half-integer value, expressed in units of the reduced Planck constant, . Being fermions, no two electrons can occupy the same quantum state, in accordance with the Pauli exclusion principle. Like all elementary particles, electrons exhibit properties of both particles and waves: They can collide with other particles and can be diffracted like light. The wave properties of electrons are easier to observe with experiments than those of other particles like neutrons and protons because electrons have a lower mass and hence a longer de Broglie wavele ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Temperature Coefficient
A temperature coefficient describes the relative change of a physical property that is associated with a given change in temperature. For a property ''R'' that changes when the temperature changes by ''dT'', the temperature coefficient α is defined by the following equation: :\frac = \alpha\,dT Here α has the dimension of an inverse temperature and can be expressed e.g. in 1/K or K−1. If the temperature coefficient itself does not vary too much with temperature and \alpha\Delta T \ll 1, a linear approximation will be useful in estimating the value ''R'' of a property at a temperature ''T'', given its value ''R''0 at a reference temperature ''T''0: :R(T) = R(T_0)(1 + \alpha\Delta T), where Δ''T'' is the difference between ''T'' and ''T''0. For strongly temperature-dependent α, this approximation is only useful for small temperature differences Δ''T''. Temperature coefficients are specified for various applications, including electric and magnetic properties of materials a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Avalanche Diode
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers, which in turn create more ionization. Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode. The Zener diode exhibits an apparently similar effect in addition to Zener breakdown. Both effects are present in any such diode, but one usually dominates the other. Avalanche diodes are optimized for avalanche effect, so they exhibit small but significant voltage drop under breakdown conditions, unlike Zener ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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