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Tunnel Field-effect Transistor
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal Maxwell–Boltzmann statistics, Maxwell–Boltzmann tail of carriers, which limits MOSFET drain current subthreshold slope, subthreshold swing to about 60 mV/Decade (log scale), decade of current at room temperature. TFET studies can be traced back to Stuetzer who in 1952 published first investigations of a transistor containing the basic elements of the TFET, a gated p-n junction. The reported surface conductivity control was, however, not related to tunneling. The first TFET was rep ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Conduction Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carver Mead
Carver Andress Mead (born 1 May 1934) is an American scientist and engineer. He currently holds the position of Gordon and Betty Moore Professor Emeritus of Engineering and Applied Science at the California Institute of Technology (Caltech), having taught there for over 40 years. A pioneer of modern microelectronics, Mead has made contributions to the development and design of semiconductors, digital chips, and silicon compilers, technologies which form the foundations of modern very-large-scale integration chip design. Mead has also been involved in the founding of more than 20 companies. In the 1980s, Mead focused on electronic modeling of human neurology and biology, creating " neuromorphic electronic systems." Most recently, he has called for the reconceptualization of modern physics, revisiting the theoretical debates of Niels Bohr, Albert Einstein and others in light of later experiments and developments in instrumentation. Mead's contributions as a teacher in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively " negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony. In the first public report of the discovery (presentation at the 12th annual meeting of the Physical Society of Japan in October 1957), Takashi Suzuki, who was a student at Tokyo University of Science and doing his internship at Tokyo Tsushin Kogyo under Esaki's supervision, was a co-author. Suzuki, along with Yuriko Kurose, first observed the negative differential resistance when they were testing heavily doped P-N junctions. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tun ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Junction
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles) pass through the barrier by the process of quantum tunnelling. Classically, the electron has zero probability of passing through the barrier. However, according to quantum mechanics, the electron has a non-zero wave amplitude in the barrier, and hence it has some probability of passing through the barrier. Tunnel junctions serve a variety of different purposes. Multijunction photovoltaic cell In multijunction photovoltaic cells, tunnel junctions form the connections between consecutive p-n junctions. They function as an ohmic contact, ohmic electrical contact in the middle of a semiconductor device. Magnetic tunnel junction In magnetic tunnel junctions, electrons tunnel through a thin insulating barrier from one magnetic material to another. This can serve as a basis for a magnetic detector. Superconduc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IEEE Electron Device Letters
''IEEE Electron Device Letters'' is a peer-reviewed scientific journal published monthly by the IEEE. It was founded in 1980 by IEEE Electron Devices Society. The journal covers the advances in electron and ion integrated circuit devices. Its editor-in-chief is Sayeef Salahuddin (University of California, Berkeley). According to the ''Journal Citation Reports'', the journal has a 2023 impact factor The impact factor (IF) or journal impact factor (JIF) of an academic journal is a type of journal ranking. Journals with higher impact factor values are considered more prestigious or important within their field. The Impact Factor of a journa ... of 4.1. References External links * Electron Device Letters, IEEE Electrical and electronic engineering journals Academic journals established in 1980 Semiconductor journals English-language journals Monthly journals {{physics-journal-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Well
A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and electron hole, holes), leading to energy levels called "energy subbands", i.e., the carriers can only have discrete energy values. The concept of quantum well was proposed in 1963 independently by Herbert Kroemer and by Zhores Alferov and R.F. Kazarinov.Zh. I. Alferov and R.F. Kazarinov, Authors Certificate 28448 (U.S.S.R) 1963. History The semiconductor quantum well was developed in 1970 by Leo Esaki, Esaki and Raphael Tsu, Tsu, who also invented synthetic superlattices. They suggested that a Heterojunction, heterostructure made up of alternating thin l ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Double-gate
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Antimonide
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. It has a room temperature direct bandgap of approximately 0.73 eV. History The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide. The Ga-Sb phase equilibria was investigated in 1955 by Koster and by Greenfield. Applications GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. See also * Aluminium antimonide * Indium antimonide * Gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide Antimonide
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb ( Ga As(1-''x'') Sb''x''), is a ternary III-V semiconductor compound; ''x'' indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb). Preparation GaAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered heterostructures with other III-V compounds. Thermodynamic Stability GaAsSb has a miscibility gap at temperatures below 751 °C. This means that intermediate compositions of the alloy below this temperature are thermodynamically unstable and can spontaneously separate into two phases: one GaAs-rich and one GaSb-rich. This limits the compositions of GaAsSb that can be obtained ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Arsenide
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as a terahertz radiation Terahertz radiation – also known as submillimeter radiation, terahertz waves, tremendously high frequency (THF), T-rays, T-waves, T-light, T-lux or THz – consis ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carbon Nanotube
A carbon nanotube (CNT) is a tube made of carbon with a diameter in the nanometre range ( nanoscale). They are one of the allotropes of carbon. Two broad classes of carbon nanotubes are recognized: * ''Single-walled carbon nanotubes'' (''SWCNTs'') have diameters around 0.5–2.0 nanometres, about 100,000 times smaller than the width of a human hair. They can be idealised as cutouts from a two-dimensional graphene sheet rolled up to form a hollow cylinder. * ''Multi-walled carbon nanotubes'' (''MWCNTs'') consist of nested single-wall carbon nanotubes in a nested, tube-in-tube structure. Double- and triple-walled carbon nanotubes are special cases of MWCNT. Carbon nanotubes can exhibit remarkable properties, such as exceptional tensile strength and thermal conductivity because of their nanostructure and strength of the bonds between carbon atoms. Some SWCNT structures exhibit high electrical conductivity while others are semiconductors. In addition, carbon nanotubes can b ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
