|
Tunnel Magnetoresistance
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field. If the magnetizations are in a parallel orientation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetic Tunnel Junction
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field. If the magnetizations are in a parallel orientation it ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Iron
Iron () is a chemical element with symbol Fe (from la, ferrum) and atomic number 26. It is a metal that belongs to the first transition series and group 8 of the periodic table. It is, by mass, the most common element on Earth, right in front of oxygen (32.1% and 30.1%, respectively), forming much of Earth's outer and inner core. It is the fourth most common element in the Earth's crust. In its metallic state, iron is rare in the Earth's crust, limited mainly to deposition by meteorites. Iron ores, by contrast, are among the most abundant in the Earth's crust, although extracting usable metal from them requires kilns or furnaces capable of reaching or higher, about higher than that required to smelt copper. Humans started to master that process in Eurasia during the 2nd millennium BCE and the use of iron tools and weapons began to displace copper alloys, in some regions, only around 1200 BCE. That event is considered the transition from the Bronze Age to the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Non-volatile Memory
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs ( metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MRAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction and is the simplest stru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hard Disk Drive
A hard disk drive (HDD), hard disk, hard drive, or fixed disk is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage with one or more rigid rapidly rotating platters coated with magnetic material. The platters are paired with magnetic heads, usually arranged on a moving actuator arm, which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual blocks of data can be stored and retrieved in any order. HDDs are a type of non-volatile storage, retaining stored data when powered off. Modern HDDs are typically in the form of a small rectangular box. Introduced by IBM in 1956, HDDs were the dominant secondary storage device for general-purpose computers beginning in the early 1960s. HDDs maintained this position into the modern era of servers and personal computers, though personal computing devices produced in large volume, like cell phones and tablets, rely ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Disk Read-and-write Head
A disk read-and-write head is the small part of a disk drive which moves above the disk platter and transforms the platter's magnetic field into electrical current (reads the disk) or, vice versa, transforms electrical current into magnetic field (writes the disk). The heads have gone through a number of changes over the years. In a hard drive, the heads ''fly'' above the disk surface with clearance of as little as 3 nanometres. The flying height has been decreasing with each new generation of technology to enable higher areal density. The flying height of the head is controlled by the design of an air bearing etched onto the disk-facing surface of the ''slider''. The role of the air bearing is to maintain the flying height constant as the head moves over the surface of the disk. The air bearings are carefully designed to maintain the same height across the entire platter, despite differing speeds depending on the head distance from the center of the platter. If the head hi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnesium Oxide
Magnesium oxide ( Mg O), or magnesia, is a white hygroscopic solid mineral that occurs naturally as periclase and is a source of magnesium (see also oxide). It has an empirical formula of MgO and consists of a lattice of Mg2+ ions and O2− ions held together by ionic bonding. Magnesium hydroxide forms in the presence of water (MgO + H2O → Mg(OH)2), but it can be reversed by heating it to remove moisture. Magnesium oxide was historically known as magnesia alba (literally, the white mineral from Magnesia), to differentiate it from '' magnesia negra'', a black mineral containing what is now known as manganese. Related oxides While "magnesium oxide" normally refers to MgO, the compound magnesium peroxide MgO2 is also known. According to evolutionary crystal structure prediction, MgO2 is thermodynamically stable at pressures above 116 GPa (gigapascals), and a semiconducting suboxide Mg3O2 is thermodynamically stable above 500 GPa. Because of its stability, MgO is used as a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Crystalline
A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macroscopic single crystals are usually identifiable by their geometrical shape, consisting of flat faces with specific, characteristic orientations. The scientific study of crystals and crystal formation is known as crystallography. The process of crystal formation via mechanisms of crystal growth is called crystallization or solidification. The word ''crystal'' derives from the Ancient Greek word (), meaning both " ice" and " rock crystal", from (), "icy cold, frost". Examples of large crystals include snowflakes, diamonds, and table salt. Most inorganic solids are not crystals but polycrystals, i.e. many microscopic crystals fused together into a single solid. Polycrystals include most metals, rocks, ceramics, and ice. A third ca ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Jagadeesh Moodera
Jagadeesh Subbaiah Moodera is an American physicist of Indian origin and is senior research scientist at MIT's Francis Bitter Magnet Laboratory. In 1994 together with the MIT research team led by P.M. Tedrow and R. Meservey, they showed a practical way to implement room temperature magnetic tunnel junction (MTJ) using a magnetic stack based on CoFe–Al2O3–Co, demonstrating a tunnel magnetoresistance ratio (TMR) of 11.8%. Low temperature magnetoresistive tunneling had been discovered by Michel Julliere in 1975 but it would be more than a decade before a room temperature system was found. In 1991, Terunobu Miyazaki and others at Tohoku University had demonstrated a MTJ with room temperature TMR of 2.7%. In 1994, Miyazaki's team developed a room temperature MTJ with high TMR (18.0%) based on an Fe–Al2O3–Fe stack. Thus, both Miyazaki and Merservey are recognized as the developer of room temperature MTBesides its great fundamental interest, room temperature magnetoresistive ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Amorphous
In condensed matter physics and materials science, an amorphous solid (or non-crystalline solid, glassy solid) is a solid that lacks the long-range order that is characteristic of a crystal. Etymology The term comes from the Greek language, Greek ''a'' ("without"), and ''morphé'' ("shape, form"). In some older articles and books, the term was used synonymously with glass. Today, "glassy solid" or "amorphous solid" is considered the overarching concept. Polymer, Polymers are often amorphous. Structure Amorphous materials have an internal structure comprising interconnected structural blocks that can be similar to the basic structural units found in the corresponding crystalline phase of the same compound. Unlike crystalline materials, however, no long-range order exists. Localized order in amorphous materials can be categorized as short or medium range order. By convention, short range order extends only to the nearest neighbor shell, typically only 1-2 atomic spacings. Me ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tohoku University
, or is a Japanese national university located in Sendai, Miyagi in the Tōhoku Region, Japan. It is informally referred to as . Established in 1907, it was the third Imperial University in Japan and among the first three Designated National Universities, along with the University of Tokyo and Kyoto University. Tohoku University is a Top Type university of the Top Global University Project, and since 2020 has been ranked the best university in Japan by Times Higher Education. In 2016, Tohoku University had 10 faculties, 16 graduate schools and 6 research institutes, with a total enrollment of 17,885 students. The university's three core values are "Research First (研究第一主義)," "Open-Doors (門戸開放)," and "Practice-Oriented Research and Education (実学尊重)." History On June 22, 1907(明治40年,''Mēji yonjyunen''), the university was established under the name by the Meiji government as the third Imperial University of Japan, following the Tokyo Imp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
