|
Single-electron Transistor
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between source/drain to a quantum dot (conductive island). Moreover, the electrical potential of the island can be tuned by a third electrode, known as the gate, which is capacitively coupled to the island. The conductive island is sandwiched between two tunnel junctions modeled by capacitors, C_ and C_, and resistors, R_ and R_, in parallel. History A new subfield of condensed matter physics began in 1977 when David Thouless pointed out that, when made small enough, the size of a conductor affects its electronic properties. This was followed by mesoscopic physics research in the 1980s based on the submicron-size of systems investigated. Thus began research related to the single-electron transistor. The first single-electron transistor based on the phenomenon of Coulomb blockade was reported in 1986 by S ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SET Schematic2
Set, The Set, SET or SETS may refer to: Science, technology, and mathematics Mathematics *Set (mathematics), a collection of elements *Category of sets, the category whose objects and morphisms are sets and total functions, respectively Electronics and computing *Set (abstract data type), a data type in computer science that is a collection of unique values ** Set (C++), a set implementation in the C++ Standard Library * Set (command), a command for setting values of environment variables in Unix and Microsoft operating-systems * Secure Electronic Transaction, a standard protocol for securing credit card transactions over insecure networks * Single-electron transistor, a device to amplify currents in nanoelectronics * Single-ended triode, a type of electronic amplifier * Set!, a programming syntax in the scheme programming language Biology and psychology * Set (psychology), a set of expectations which shapes perception or thought *Set or sett, a badger's den *Set, a small tuber ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ohm's Law
Ohm's law states that the current through a conductor between two points is directly proportional to the voltage across the two points. Introducing the constant of proportionality, the resistance, one arrives at the usual mathematical equation that describes this relationship: :I = \frac, where is the current through the conductor, ''V'' is the voltage measured ''across'' the conductor and ''R'' is the resistance of the conductor. More specifically, Ohm's law states that the ''R'' in this relation is constant, independent of the current. If the resistance is not constant, the previous equation cannot be called ''Ohm's law'', but it can still be used as a definition of static/DC resistance. Ohm's law is an empirical relation which accurately describes the conductivity of the vast majority of electrically conductive materials over many orders of magnitude of current. However some materials do not obey Ohm's law; these are called non-ohmic. The law was named after t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor Model
Transistors are simple devices with complicated behavior. In order to ensure the reliable operation of circuits employing transistors, it is necessary to scientifically model the physical phenomena observed in their operation using transistor models. There exists a variety of different models that range in complexity and in purpose. Transistor models divide into two major groups: models for device design and models for circuit design. Models for device design The modern transistor has an internal structure that exploits complex physical mechanisms. Device design requires a detailed understanding of how device manufacturing processes such as ion implantation, impurity diffusion, oxide growth, annealing, and etching affect device behavior. Process models simulate the manufacturing steps and provide a microscopic description of device "geometry" to the device simulator. "Geometry" does not mean readily identified geometrical features such as a planar or wrap-around gate structur ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark "COS-MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Current–voltage Characteristic
A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference across it. In electronics In electronics, the relationship between the direct current ( DC) through an electronic device and the DC voltage across its terminals is called a current–voltage characteristic of the device. Electronic engineers use these charts to determine basic parameters of a device and to model its behavior in an electrical circuit. These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current-voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually displayed on a more complex curr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Uncertainty Principle
In quantum mechanics, the uncertainty principle (also known as Heisenberg's uncertainty principle) is any of a variety of mathematical inequalities asserting a fundamental limit to the accuracy with which the values for certain pairs of physical quantities of a particle, such as position, ''x'', and momentum, ''p'', can be predicted from initial conditions. Such variable pairs are known as complementary variables or canonically conjugate variables; and, depending on interpretation, the uncertainty principle limits to what extent such conjugate properties maintain their approximate meaning, as the mathematical framework of quantum physics does not support the notion of simultaneously well-defined conjugate properties expressed by a single value. The uncertainty principle implies that it is in general not possible to predict the value of a quantity with arbitrary certainty, even if all initial conditions are specified. Introduced first in 1927 by the German physicist Werner ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Elementary Charge
The elementary charge, usually denoted by is the electric charge carried by a single proton or, equivalently, the magnitude of the negative electric charge carried by a single electron, which has charge −1 . This elementary charge is a fundamental physical constant. In the SI system of units, the value of the elementary charge is exactly defined as e = coulombs, or 160.2176634 zeptocoulombs (zC). Since the 2019 redefinition of SI base units, the seven SI base units are defined by seven fundamental physical constants, of which the elementary charge is one. In the centimetre–gram–second system of units (CGS), the corresponding quantity is . Robert A. Millikan and Harvey Fletcher's oil drop experiment first directly measured the magnitude of the elementary charge in 1909, differing from the modern accepted value by just 0.6%. Under assumptions of the then-disputed atomic theory, the elementary charge had also been indirectly inferred to ~3% accuracy from bla ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Tunnelling
Quantum tunnelling, also known as tunneling ( US) is a quantum mechanical phenomenon whereby a wavefunction can propagate through a potential barrier. The transmission through the barrier can be finite and depends exponentially on the barrier height and barrier width. The wavefunction may disappear on one side and reappear on the other side. The wavefunction and its first derivative are continuous. In steady-state, the probability flux in the forward direction is spatially uniform. No particle or wave is lost. Tunneling occurs with barriers of thickness around 1–3 nm and smaller. Some authors also identify the mere penetration of the wavefunction into the barrier, without transmission on the other side as a tunneling effect. Quantum tunneling is not predicted by the laws of classical mechanics where surmounting a potential barrier requires sufficient kinetic energy. Quantum tunneling plays an essential role in physical phenomena such as nuclear fusion and alpha radioact ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Coulomb Blockade
In mesoscopic physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the decrease in electrical conductance at small bias voltages of a small electronic device comprising at least one low-capacitance tunnel junction. Because of the CB, the conductance of a device may not be constant at low bias voltages, but disappear for biases under a certain threshold, i.e. no current flows. Coulomb blockade can be observed by making a device very small, like a quantum dot. When the device is small enough, electrons inside the device will create a strong Coulomb repulsion preventing other electrons to flow. Thus, the device will no longer follow Ohm's law and the current-voltage relation of the Coulomb blockade looks like a staircase. Even though the Coulomb blockade can be used to demonstrate the quantization of the electric charge, it remains a classical effect and its main description does not require quantum mechanics. However, when few electron ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
