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Semiconductor Device Modeling
Semiconductor device modeling creates models for the behavior of semiconductor devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to capture the electrical behavior of such devices but do not generally derive them from the underlying physics. Normally it starts from the output of a semiconductor process simulation. Introduction The figure to the right provides a simplified conceptual view of "the big picture". This figure shows two inverter stages and the resulting input-output voltage-time plot of the circuit. From the digital systems point of view the key parameters of interest are: timing delays, switching power, leakage current and cross-coupling (''crosstalk'') with other blocks. The voltage levels and transition speed are also of concern. The figure also shows schematically the importance of Ion versus Ioff, which in turn is re ...
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Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused trans ...
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Electronic Design Automation
Electronic design automation (EDA), also referred to as electronic computer-aided design (ECAD), is a category of software tools for designing Electronics, electronic systems such as integrated circuits and printed circuit boards. The tools work together in a Design flow (EDA), design flow that chip designers use to design and analyze entire semiconductor chips. Since a modern semiconductor chip can have billions of components, EDA tools are essential for their design; this article in particular describes EDA specifically with respect to integrated circuits (ICs). History Early days The earliest electronic design automation is attributed to IBM with the documentation of its IBM 700/7000 series, 700 series computers in the 1950s. Prior to the development of EDA, integrated circuits were designed by hand and manually laid out. Some advanced shops used geometric software to generate tapes for a Gerber format, Gerber photoplotter, responsible for generating a monochromatic ex ...
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Diode Modelling
In electronics, diode modelling refers to the mathematical models used to approximate the actual behaviour of real diodes to enable calculations and circuit analysis. A diode's I- V curve is nonlinear. A very accurate, but complicated, physical model composes the I-V curve from three exponentials with a slightly different steepness (i.e. ideality factor), which correspond to different recombination mechanisms in the device; at very large and very tiny currents the curve can be continued by linear segments (i.e. resistive behaviour). In a relatively good approximation a diode is modelled by the single-exponential Shockley diode law. This nonlinearity still complicates calculations in circuits involving diodes so even simpler models are often used. This article discusses the modelling of p-n junction diodes, but the techniques may be generalized to other solid state diodes. Large-signal modelling Shockley diode model The Shockley diode equation relates the diode current ...
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Compact Model Coalition
The Compact Model Coalition (formerly the Compact Model Council) is a working group in the electronic design automation (EDA) industry formed to choose, maintain and promote the use of standard semiconductor device models. Commercial and industrial analog simulators (such as SPICE) need to add device models as technology advances (see Moore's law) and earlier models become inaccurate. Before this group was formed, new transistor models were largely proprietary, which severely limited the choice of simulators that could be used. It was formed in August, 1996, for the purpose developing and standardizing the use and implementation of SPICE models and the model interfaces. In May 2013, the Silicon Integration Initiative (Si2) and TechAmerica announced the transfer of the Compact Model Council to Si2 and a renaming to Compact Model Coalition. To develop and maintain the models, the CMC works with device modeling and simulation experts belonging to an international collection of un ...
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IEEE Electron Device Letters
''IEEE Electron Device Letters'' is a peer-reviewed scientific journal published monthly by the IEEE. It was founded in 1980 by IEEE Electron Devices Society. The journal covers the advances in electron and ion integrated circuit devices. Its editor-in-chief is Sayeef Salahuddin (University of California, Berkeley). According to the ''Journal Citation Reports'', the journal has a 2023 impact factor The impact factor (IF) or journal impact factor (JIF) of an academic journal is a type of journal ranking. Journals with higher impact factor values are considered more prestigious or important within their field. The Impact Factor of a journa ... of 4.1. References External links * Electron Device Letters, IEEE Electrical and electronic engineering journals Academic journals established in 1980 Semiconductor journals English-language journals Monthly journals {{physics-journal-stub ...
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Latchup
In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-Electrical impedance, impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent. A Power cycling, power cycle is required to correct this situation. The parasitic structure is usually equivalent to a thyristor (or Silicon-controlled rectifier, SCR), a P-n junction, PNPN structure which acts as a PNP and an NPN Bipolar junction transistor, transistor stacked next to each other. During a latch-up when one of the transistors is conducting, the other one begins conducting too. They both keep each other in saturation for as long as the structure is forward-biased and some current flows through it - which usually means until a power-down. The SCR parasitic structure is formed as a par ...
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CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ...
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MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ...
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Siegfried Selberherr
Siegfried Selberherr (* 3. August 1955 in Klosterneuburg) is an Austrian scientist in the field of microelectronics. He is a professor at the Institute for Microelectronics of the Technische Universität Wien (TU Wien). His primary research interest is in modeling and simulation of physical phenomena in the field of microelectronics. Biography Since 1988 Siegfried Selberherr is a chair professor for software technology of microelectronic systems at the TU Wien. He studied electrical engineering at the TU Wien, where he received the degree of Diplom-Ingenieur and the doctoral degree in technical sciences in 1978 and 1981, respectively, and the Habilitation in 1984. Afterwards he was a visiting researcher with the Bell-Labs for some time. Between 1996 and 2020 Prof. Selberherr was a Distinguished Lecturer of the IEEE Electron Devices Society. For many years, Prof. Selberherr was a leader of the Institute for Microelectronics at the TU Wien (now this Institute is headed by his you ...
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Integrated Circuit
An integrated circuit (IC), also known as a microchip or simply chip, is a set of electronic circuits, consisting of various electronic components (such as transistors, resistors, and capacitors) and their interconnections. These components are etched onto a small, flat piece ("chip") of semiconductor material, usually silicon. Integrated circuits are used in a wide range of electronic devices, including computers, smartphones, and televisions, to perform various functions such as processing and storing information. They have greatly impacted the field of electronics by enabling device miniaturization and enhanced functionality. Integrated circuits are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count. The IC's mass production capability, reliability, and building-block approach to integrated circuit design have ensured the rapid adoption of standardized ICs in place of designs using discre ...
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Integrated Circuit Design
Integrated circuit design, semiconductor design, chip design or IC design, is a sub-field of electronics engineering, encompassing the particular Boolean logic, logic and circuit design techniques required to design integrated circuits (ICs). An IC consists of miniaturized electronic components built into an electrical network on a monolithic semiconductor substrate by photolithography. IC design can be divided into the broad categories of Digital data, digital and analog electronics, analog IC design. Digital IC design is to produce components such as microprocessors, FPGAs, memories (Random-access memory, RAM, Read-only memory, ROM, and flash memory, flash) and digital Application-specific integrated circuit, ASICs. Digital design focuses on logical correctness, maximizing circuit density, and placing circuits so that clock and timing signals are routed efficiently. Analog IC design also has specializations in power IC design and Radio frequency, RF IC design. Analog IC design ...
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