Random Dopant Fluctuation
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Random Dopant Fluctuation
Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration. In MOSFET transistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage. In newer process technologies RDF has a larger effect because the total number of dopant A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When ...s is fewer, and the addition or deletion of a few impurity atoms can significantly alter transistor properties. RDF is a local form of process variation, meaning that two neighbouring transistors may have significantly different dopant concentrations. Asenov, A. HuangRandom dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study Electron ...
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MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_con­ti­nuous_current_of_30  surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ...
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Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ...
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Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ...
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Dopant
A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently either crystals of a semiconductor such as silicon and germanium for use in solid-state electronics, or transparent crystals for use in the production of various laser types; however, in some cases of the latter, noncrystalline substances such as glass can also be doped with impurities. In solid-state electronics using the proper types and amounts of dopants in semiconductors is what produces the p-type semiconductors and n-type semiconductors that are essential for making transistors and diodes. Transparent crystals Lasing media The procedure of doping tiny amounts of the metals chromium (Cr), ...
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Impurity Atom
In chemistry and materials science, impurities are chemical substances inside a confined amount of liquid, gas, or solid, which differ from the chemical composition of the material or compound. Firstly, a pure chemical should appear thermodynamically in at least one chemical phase and can also be characterized by its one-component-phase diagram. Secondly, practically speaking, a pure chemical should prove to be homogeneous (i.e., will show no change of properties after undergoing a wide variety of consecutive analytical chemical procedures). The perfect pure chemical will pass all attempts and tests of further separation and purification. Thirdly, and here we focus on the common chemical definition, it should not contain any trace of any other kind of chemical species. In reality, there are no absolutely 100% pure chemical compounds, as there is always some minute contamination. Indeed, as detection limits in analytical chemistry decrease, the number of impurities detected t ...
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