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Quilt Packaging
Quilt Packaging (QP) is an integrated circuit packaging and chip-to-chip interconnect packaging technology that utilizes “ nodule” structures that extend out horizontally from the edges of microchips to make electrically and mechanically robust chip-to-chip interconnections. QP nodules are created as an integral part of the microchip using standard back end of the line semiconductor device fabrication techniques. Solder is then electroplated on top of the nodules to enable the chip to chip interconnection with sub-micron alignment accuracy. Small high yielding “chiplets” made from any semiconductor material (Silicon, Gallium Arsenide, Silicon Carbide, Gallium Nitride, etc.), can be “quilted” together to create larger multi-function meta-chip. Thus, QP technology can integrate multiple chips with dissimilar technologies or substrate materials in planar, 2.5D and 3D configurations. RF Analog Performance Multiple measured insertion loss on QP interconnec ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Concept Image Of Quilt Packaging Nodules And RDL Metal
Concepts are defined as abstract ideas. They are understood to be the fundamental building blocks of the concept behind principles, thoughts and beliefs. They play an important role in all aspects of cognition. As such, concepts are studied by several disciplines, such as linguistics, psychology, and philosophy, and these disciplines are interested in the logical and psychological structure of concepts, and how they are put together to form thoughts and sentences. The study of concepts has served as an important flagship of an emerging interdisciplinary approach called cognitive science. In contemporary philosophy, there are at least three prevailing ways to understand what a concept is: * Concepts as mental representations, where concepts are entities that exist in the mind (mental objects) * Concepts as abilities, where concepts are abilities peculiar to cognitive agents (mental states) * Concepts as Fregean senses, where concepts are abstract objects, as opposed to mental obje ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bit Rate
In telecommunications and computing, bit rate (bitrate or as a variable ''R'') is the number of bits that are conveyed or processed per unit of time. The bit rate is expressed in the unit bit per second (symbol: bit/s), often in conjunction with an SI prefix such as kilo (1 kbit/s = 1,000 bit/s), mega (1 Mbit/s = 1,000 kbit/s), giga (1 Gbit/s = 1,000 Mbit/s) or tera (1 Tbit/s = 1,000 Gbit/s). The non-standard abbreviation bps is often used to replace the standard symbol bit/s, so that, for example, 1 Mbps is used to mean one million bits per second. In most computing and digital communication environments, one byte per second (symbol: B/s) corresponds to 8 bit/s. Prefixes When quantifying large or small bit rates, SI prefixes (also known as metric prefixes or decimal prefixes) are used, thus: Binary prefixes are sometimes used for bit rates. The International Standard ( IEC 80000-13) specifies different a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
S-parameter
Scattering parameters or S-parameters (the elements of a scattering matrix or S-matrix) describe the electrical behavior of linear electrical networks when undergoing various steady state stimuli by electrical signals. The parameters are useful for several branches of electrical engineering, including electronics, communication systems design, and especially for microwave engineering. The S-parameters are members of a family of similar parameters, other examples being: Y-parameters, Z-parameters, H-parameters, T-parameters or ABCD-parameters. They differ from these, in the sense that ''S-parameters'' do not use open or short circuit conditions to characterize a linear electrical network; instead, matched loads are used. These terminations are much easier to use at high signal frequencies than open-circuit and short-circuit terminations. Contrary to popular belief, the quantities are not measured in terms of power (except in now-obsolete six-port network analyzers). Modern vector ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Radio Frequency
Radio frequency (RF) is the oscillation rate of an alternating electric current or voltage or of a magnetic, electric or electromagnetic field or mechanical system in the frequency range from around to around . This is roughly between the upper limit of audio frequencies and the lower limit of infrared frequencies; these are the frequencies at which energy from an oscillating current can radiate off a conductor into space as radio waves. Different sources specify different upper and lower bounds for the frequency range. Electric current Electric currents that oscillate at radio frequencies (RF currents) have special properties not shared by direct current or lower audio frequency alternating current, such as the 50 or 60 Hz current used in electrical power distribution. * Energy from RF currents in conductors can radiate into space as electromagnetic waves ( radio waves). This is the basis of radio technology. * RF current does not penetrate deeply into electrical c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Insertion Loss
In telecommunications, insertion loss is the loss of signal power resulting from the insertion of a device in a transmission line or optical fiber and is usually expressed in decibels (dB). If the power transmitted to the load before insertion is ''P''T and the power received by the load after insertion is ''P''R, then the insertion loss in decibels is given by, :IL(\mathrm) = 10 \log_ Electronic filters Insertion loss is a figure of merit for an electronic filter and this data is generally specified with a filter. Insertion loss is defined as a ratio of the signal level in a test configuration without the filter installed (\left\vert V_1 \right\vert) to the signal level with the filter installed (\left\vert V_2 \right\vert). This ratio is described in decibels by the following equation: :\mbox = 10 \log_ = 20 \log_ For passive filters, \left\vert V_2 \right\vert will be smaller than \left\vert V_1 \right\vert. In this case, the insertion loss is positive and measures ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Three-dimensional Integrated Circuit
A three-dimensional integrated circuit (3D IC) is a MOSFET, MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics. 3D integrated circuits can be classified by their level of interconnect hierarchy at the global (Integrated circuit packaging, package), intermediate (bond pad) and local (transistor) level. In general, 3D integration is a broad term that includes such technologies as 3D wafer-level packaging (3DWLP); 2.5D and 3D interposer-based integration; 3D stacked ICs (3D-SICs); monolithic 3D ICs; ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
System In Package
A system in a package (SiP) or system-in-package is a number of integrated circuits enclosed in one or more chip carrier packages that may be stacked using package on package. The SiP performs all or most of the functions of an electronic system, and is typically used inside a mobile phone, digital music player, etc. Dies containing integrated circuits may be stacked vertically on a substrate. They are internally connected by fine wires that are bonded to the package. Alternatively, with a flip chip technology, solder bumps are used to join stacked chips together. A SiP is like a system on a chip (SoC) but less tightly integrated and not on a single semiconductor die. SiP dies can be stacked vertically or tiled horizontally, unlike less dense multi-chip modules, which place dies horizontally on a carrier. SiP connects the dies with standard off-chip wire bonds or solder bumps, unlike slightly denser three-dimensional integrated circuits which connect stacked silicon dies with ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteris ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Carbide
Silicon carbide (SiC), also known as carborundum (), is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and Cat's whisker detector, detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Natural occurrence Naturally occurring moissanite is found in only minut ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multi-chip Module
A multi-chip module (MCM) is generically an electronic assembly (such as a package with a number of conductor terminals or "pins") where multiple integrated circuits (ICs or "chips"), semiconductor dies and/or other discrete components are integrated, usually onto a unifying substrate, so that in use it can be treated as if it were a larger IC. Other terms for MCM packaging include "heterogeneous integration" or "hybrid integrated circuit". The advantage of using MCM packaging is it allows a manufacturer to use multiple components for modularity and/or to improve yields over a conventional monolithic IC approach. Overview Multi-chip modules come in a variety of forms depending on the complexity and development philosophies of their designers. These can range from using pre-packaged ICs on a small printed circuit board (PCB) meant to mimic the package footprint of an existing chip package to fully custom chip packages integrating many chip dies on a high density interconnection ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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