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Nanoprobing
Nanoprobing is method of extracting device electrical parameters through the use of nanoscale tungsten wires, used primarily in the semiconductor industry. The characterization of individual devices is instrumental to engineers and integrated circuit designers during initial product development and debug. It is commonly utilized in device failure analysis laboratories to aid with yield enhancement, quality and reliability issues and customer returns. Commercially available nanoprobing systems are integrated into either a vacuum-based scanning electron microscope (SEM) or atomic force microscope (AFM). Nanoprobing systems that are based on AFM technology are referred to as Atomic Force nanoProbers (AFP). Principles and operation AFM based nanoprobers, enable up to eight probe tips to be scanned to generate high resolution AFM topography images, as well as Conductive AFM, Scanning Capacitance, and Electrostatic Force Microscopy images. Conductive AFM provides pico-amp resolution t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Failure Analysis
Failure analysis is the process of collecting and analyzing data to determine the cause of a failure, often with the goal of determining corrective actions or liability. According to Bloch and Geitner, ”machinery failures reveal a reaction chain of cause and effect… usually a deficiency commonly referred to as the symptom…”. failure analysis can save money, lives, and resources if done correctly and acted upon. It is an important discipline in many branches of manufacturing industry, such as the electronics industry, where it is a vital tool used in the development of new products and for the improvement of existing products. The failure analysis process relies on collecting failed components for subsequent examination of the cause or causes of failure using a wide array of methods, especially microscopy and spectroscopy. Nondestructive testing (NDT) methods (such as industrial computed tomography scanning) are valuable because the failed products are unaffected by analysis, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Current–voltage Characteristic
A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference across it. In electronics In electronics, the relationship between the direct current ( DC) through an electronic device and the DC voltage across its terminals is called a current–voltage characteristic of the device. Electronic engineers use these charts to determine basic parameters of a device and to model its behavior in an electrical circuit. These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current-voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually displayed on a more complex curr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Beam-induced Deposition
Electron-beam-induced deposition (EBID) is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope, which results in high spatial accuracy (potentially below one nanometer) and the possibility to produce free-standing, three-dimensional structures. Process The focused electron beam of a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM) is commonly used. Another method is ion-beam-induced deposition (IBID), where a focused ion beam is applied instead. Precursor materials are typically liquid or solid and gasified prior to deposition, usually through vaporization or sublimation, and introduced, at accurately controlled rate, into the high-vacuum chamber of the electron microscope. Alternatively, solid precursors can be sublimated by the electron beam itself. When deposition occurs at a high ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Contact Resistance
The term contact resistance refers to the contribution to the total resistance of a system which can be attributed to the contacting interfaces of electrical leads and connections as opposed to the intrinsic resistance. This effect is described by the term electrical contact resistance (ECR) and arises as the result of the limited areas of true contact at an interface and the presence of resistive surface films or oxide layers. ECR may vary with time, most often decreasing, in a process known as resistance creep. The idea of potential drop on the injection electrode was introduced by William Shockley to explain the difference between the experimental results and the model of gradual channel approximation. In addition to the term ECR, ''interface resistance'', ''transitional resistance'', or just simply ''correction term'' are also used. The term ''parasitic resistance'' is used as a more general term, of which it is usually assumed that contact resistance is a major component. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
BEOL
The back end of line (BEOL) is the second portion of IC fabrication where the individual devices (transistors, capacitors, resistors, etc.) get interconnected with wiring on the wafer, the metalization layer. Common metals are copper and aluminum. BEOL generally begins when the first layer of metal is deposited on the wafer. BEOL includes contacts, insulating layers (dielectrics), metal levels, and bonding sites for chip-to-package connections. After the last FEOL step, there is a wafer with isolated transistors (without any wires). In BEOL part of fabrication stage contacts (pads), interconnect wires, vias and dielectric structures are formed. For modern IC process, more than 10 metal layers can be added in the BEOL. Steps of the BEOL: # Silicidation of source and drain regions and the polysilicon Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bit Cell
A bit cell is the length of tape, the area of disc surface, or the part of an integrated circuit in which a single bit is recorded. The smaller the bit cells are, the greater the storage density of the medium is. In magnetic storage, the magnetic flux or magnetization doesn't necessarily change at the boundaries of bit cells to indicate bit states. For example, the presence of a magnetic transition within a bit cell might record state 1, and the lack of such a transition might record state 0. Other encodings are also possible. See also *Computer data storage Computer data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers. The central processing unit (CPU) of a compute ... References Software Preservation Society glossary entry for bit cell {{compu-storage-stub Computer data storage ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Static Random-access Memory
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term ''static'' differentiates SRAM from DRAM (''dynamic'' random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost; it is typically used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory. History Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. MOS SRAM was invented in 1964 by John Schmidt at Fairchild Semiconductor. It was a 64-bit MOS p-channel SRAM. The SRAM was the main driver behind any new CMOS-based technology fabrication process since 1959 when CMOS was invented. In 1965 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark "COS-MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Integrated Circuit
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny MOSFETs (metal–oxide–semiconductor field-effect transistors) integrate into a small chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to integrated circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones and other home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs such as modern computer ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Piezoelectric
Piezoelectricity (, ) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied Stress (mechanics), mechanical stress. The word ''piezoelectricity'' means electricity resulting from pressure and latent heat. It is derived from the Greek language, Greek word ; ''piezein'', which means to squeeze or press, and ''ēlektron'', which means amber, an ancient source of electric charge. The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no Centrosymmetry, inversion symmetry. The piezoelectric effect is a reversible process (thermodynamics), reversible process: List of piezoelectric materials, materials exhibiting the piezoelectric effect also exhibit the reverse piezoelectric effect, the internal generation of a mechanical strain resulting from an appli ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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