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Nano-RAM
Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of non-volatile memory, nonvolatile random-access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories. Nantero also refers to it as NRAM. Technology The first generation Nantero NRAM technology was based on a three-terminal semiconductor device where a third terminal is used to switch the memory cell between memory states. The second generation NRAM technology is based on a two-terminal memory cell. The two-terminal cell has advantages such as a smaller cell size, better scalability to sub-20 nm nodes (see semiconductor device fabrication), and the ability to Passivation (chemistry), passivate the memory cell during fabrication. In a non-woven fabric matrix of carbon nanotubes (CNTs), crossed nanotubes can either be touching or slightly separated depending on their positio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Universal Memory
Universal memory refers to a computer data storage device combining the cost benefits of DRAM, the speed of SRAM, the non-volatility of flash memory along with infinite durability, and longevity. Such a device, if it ever becomes possible to develop, would have a far-reaching impact on the computer market. Some doubt that such a type of memory will ever be possible. Computers, for most of their recent history, have depended on several different data storage technologies simultaneously as part of their operation. Each one operates at a level in the memory hierarchy where another would be unsuitable. A personal computer might include a few megabytes of fast but volatile and expensive SRAM as the CPU cache, several gigabytes of slower DRAM for program memory, and 128 GB-8 TB of the slow but non-volatile flash memory or 1-10 terabytes of "spinning platters" hard disk drive for long-term storage. For example, a university recommended students entering in 2015–2016 to have a PC w ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Computer Memory
In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term ''memory'' is often synonymous with the term ''primary storage'' or '' main memory''. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage that is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance. Operating systems borrow RAM capacity for caching so long as not needed by running software. If needed, contents of the computer memory can be transferred to storage; a common way of doing this is through a memory management technique called ''virtual memory''. Modern memory is implemented as semiconductor memory, where data is stored within memory cells built from MOS transistors and other components on an integrated c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Chemical-mechanical Planarization
Chemical mechanical polishing (CMP) or planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. Description The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary to set up the wafer for the formation of additional circuit elements. For example, CMP can bring the entire surface within the depth of field of a photolithography system, or selectively remove material based on its position. Typical depth-o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Magnetoresistance
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field. If the magnetizations are in a parallel orientation it ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetic Tunnel Junctions
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field. If the magnetizations are in a parallel orientation it ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Phase-change Memory
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies (most notably flash memory) with the same capability. Recent research on PCM has been directed towards attempting to find viable material alternatives to the phase-change materi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetoresistive Random-access Memory
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction and is the simplest st ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ferroelectric RAM
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory. FeRAM's advantages over Flash include: lower power usage, faster write performance and a much greater maximum read/write endurance (about 1010 to 1015 cycles). FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CPU Cache
A CPU cache is a hardware cache used by the central processing unit (CPU) of a computer to reduce the average cost (time or energy) to access data from the main memory. A cache is a smaller, faster memory, located closer to a processor core, which stores copies of the data from frequently used main memory locations. Most CPUs have a hierarchy of multiple cache levels (L1, L2, often L3, and rarely even L4), with different instruction-specific and data-specific caches at level 1. The cache memory is typically implemented with static random-access memory (SRAM), in modern CPUs by far the largest part of them by chip area, but SRAM is not always used for all levels (of I- or D-cache), or even any level, sometimes some latter or all levels are implemented with eDRAM. Other types of caches exist (that are not counted towards the "cache size" of the most important caches mentioned above), such as the translation lookaside buffer (TLB) which is part of the memory management unit (MMU) w ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Charge Pump
A charge pump is a kind of DC-to-DC converter that uses capacitors for energetic charge storage to raise or lower voltage. Charge-pump circuits are capable of high efficiencies, sometimes as high as 90–95%, while being electrically simple circuits. Description Charge pumps use some form of switching device to control the connection of a supply voltage across a load through a capacitor. In a two stage cycle, in the first stage a capacitor is connected across the supply, charging it to that same voltage. In the second stage the circuit is reconfigured so that the capacitor is in series with the supply and the load. This doubles the voltage across the load - the sum of the original supply and the capacitor voltages. The pulsing nature of the higher voltage switched output is often smoothed by the use of an output capacitor. An external or secondary circuit drives the switching, typically at tens of kilohertz up to several megahertz. The high frequency minimizes the amount of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Binary Code
A binary code represents text, computer processor instructions, or any other data using a two-symbol system. The two-symbol system used is often "0" and "1" from the binary number system. The binary code assigns a pattern of binary digits, also known as bits, to each character, instruction, etc. For example, a binary string of eight bits (which is also called a byte) can represent any of 256 possible values and can, therefore, represent a wide variety of different items. In computing and telecommunications, binary codes are used for various methods of encoding data, such as character strings, into bit strings. Those methods may use fixed-width or variable-width strings. In a fixed-width binary code, each letter, digit, or other character is represented by a bit string of the same length; that bit string, interpreted as a binary number, is usually displayed in code tables in octal, decimal or hexadecimal notation. There are many character sets and many character encodings for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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