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MOS Composite Static Induction Thyristor
MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element. The low conduction loss and rugged structure MCS make it more favorable than conversional IGBT transistors. In the blocking state nearly the complete voltage drops at the SITh. Thus the MOSFET is not exposed to high field stress. For fast switching the MOSFET with only 30–50 V blocking voltage is able. In IGBT, charge carrier concentration at emitter side in n-base layer is low as holes injected from collector easily pass to emitter electrode through p-base layer. Thus the wide-base pnp transistor operates by virtue of its current gain characteristics causing the rise collector-emitter saturation voltage. In an MCS the positive difference between the voltage of regulation element and conduction voltage drop of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually cons ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cascode
The cascode is a two-stage amplifier that consists of a common-emitter stage feeding into a common-base stage. Compared to a single amplifier stage, this combination may have one or more of the following characteristics: higher input–output isolation, higher input impedance, high output impedance, higher bandwidth. In modern circuits, the cascode is often constructed from two transistors ( BJTs or FETs), with one operating as a common emitter or common source and the other as a common base or common gate. The cascode improves input–output isolation (reduces reverse transmission), as there is no direct coupling from the output to input. This eliminates the Miller effect and thus contributes to a much higher bandwidth. History The use of a cascode (sometimes verbified to ''cascoding'') is a common technique for improving analog circuit performance, applicable to both vacuum tubes and transistors. The name "cascode" was coined in an article written by Frederick Vinton Hu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SI-thyristor
The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state. It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds. History The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975. It was capable of conducting large currents with a low forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid. In 1999, an analytical model of the SITh was developed for the PSPICE circuit simulator. In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Voltage Regulator
A voltage regulator is a system designed to automatically maintain a constant voltage. A voltage regulator may use a simple feed-forward design or may include negative feedback. It may use an electromechanical mechanism, or electronic components. Depending on the design, it may be used to regulate one or more Alternating current, AC or Direct current, DC voltages. Electronic voltage regulators are found in devices such as Power supply unit (computer), computer power supplies where they stabilize the DC voltages used by the processor and other elements. In Alternator (automotive), automobile alternators and central power station generator plants, voltage regulators control the output of the plant. In an electric power distribution system, voltage regulators may be installed at a substation or along distribution lines so that all customers receive steady voltage independent of how much power is drawn from the line. Electronic voltage regulators A simple voltage/current regulator c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IGBT Transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, so it is also used in switching ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Charge Carrier
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In conducting media, particles serve to carry charge: *In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. Many metals have electron and hole bands. In some, the majority carriers are holes. *In electrolytes, such as salt water, the charge carriers are ions, which are a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Hole
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle which is the lack of an electron at a position where one could exist in an atom or atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explain the low electron-electron scattering-rate in crystals (metals, semiconduc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, alo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gain (electronics)
In electronics, gain is a measure of the ability of a two-port circuit (often an amplifier) to increase the power or amplitude of a signal from the input to the output port by adding energy converted from some power supply to the signal. It is usually defined as the mean ratio of the signal amplitude or power at the output port to the amplitude or power at the input port. It is often expressed using the logarithmic decibel (dB) units ("dB gain"). A gain greater than one (greater than zero dB), that is amplification, is the defining property of an active component or circuit, while a passive circuit will have a gain of less than one. The term ''gain'' alone is ambiguous, and can refer to the ratio of output to input voltage (''voltage gain''), current (''current gain'') or electric power (''power gain''). In the field of audio and general purpose amplifiers, especially operational amplifiers, the term usually refers to voltage gain, but in radio frequency amplifiers ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Saturation Current
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. ''I''S, the reverse bias saturation current for an ideal p–n diode, is given by: : I_\text = e A n_\text^2 \left( \frac \sqrt + \frac \sqrt \right),\, where :''e'' is elementary charge :''A'' is the cross-sectional area :''D''p, ''D''n are the diffusion coefficient Diffusivity, mass diffusivity or diffusion coefficient is a proportionality constant between the molar flux due to molecular diffusion and the gradient in the concentration of the species (or the driving force for diffusion). Diffusivity is enc ...s of holes and electrons, respectively, :''N''D, ''N''A are the donor and acceptor concentrations at the n side and p side, respectively, :''n''i is the intrinsic carrier c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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