|
MOS-controlled Thyristor
An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable thyristor, controlled by MOSFETs (metal-oxide-semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier insulated-gate bipolar transistor (IGBT).V.A.K. Temple, "MOS-Controlled Thyristors, IEEE Electron Devices Meeting, Abstract 10.7, pp.282-285, 1984. MCTs are similar in operation to GTO thyristors, but have voltage controlled insulated gates. They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal SCRs), is called an MOS-gated thyristor. Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state. Negative voltage on the gate terminal with respect to the anode, which is close to cathode voltage during the on ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOS Controlled Thyristor
An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable thyristor, controlled by MOSFETs (metal-oxide-semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier insulated-gate bipolar transistor (IGBT).V.A.K. Temple, "MOS-Controlled Thyristors, IEEE Electron Devices Meeting, Abstract 10.7, pp.282-285, 1984. MCTs are similar in operation to GTO (thyristor), GTO thyristors, but have voltage controlled insulated gates. They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal Silicon controlled rectifier, SCRs), is called an MOS-gated thyristor. Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state. Negative voltage on the gate terminal with respect to the anode, whi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thyristor
A thyristor () is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reversed biased, or until the voltage is removed (by some other means). There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large (breakdown voltage). Some sources define silicon-controlled rectifier (SCR) and thyristor as synonymous. Other sources define thyristors as more complex devices that incorporate at least four layers of alternating N-type and P-type substrate. The first thyristor devices were ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Insulated-gate Bipolar Transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, so it is also used in switchin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
GTO (thyristor)
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (.e.g. 1200V AC) semiconductor device. It was invented by General Electric. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead. Device description Normal thyristors (silicon-controlled rectifiers) are not fully controllable switches (a "fully controllable switch" can be turned on and off at will). Thyristors can only be turned on using the gate lead, but cannot be turned off using the gate lead. Thyristors are switched on by a gate signal, but even after the gate signal is de-asserted (removed, reverse biased), the thyristor remains in the on state until a turn-off condition occurs (which can be the application of a reverse voltage to the terminals or a decrease of the forward current below a certain threshold value known as the "holding current"). Thus, a thyristor behaves like a normal semiconductor diode after it is turne ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Controlled Rectifier
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957. Some sources define silicon-controlled rectifiers and thyristors as synonymous while other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors; the latter being devices with at least four layers of alternating n- and p-type material. Ac ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET Controlled Thyristor
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solid State Switches
Solid is one of the four fundamental states of matter (the others being liquid, gas, and plasma). The molecules in a solid are closely packed together and contain the least amount of kinetic energy. A solid is characterized by structural rigidity and resistance to a force applied to the surface. Unlike a liquid, a solid object does not flow to take on the shape of its container, nor does it expand to fill the entire available volume like a gas. The atoms in a solid are bound to each other, either in a regular geometric lattice (crystalline solids, which include metals and ordinary ice), or irregularly (an amorphous solid such as common window glass). Solids cannot be compressed with little pressure whereas gases can be compressed with little pressure because the molecules in a gas are loosely packed. The branch of physics that deals with solids is called solid-state physics, and is the main branch of condensed matter physics (which also includes liquids). Materials scien ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power Electronics
Power electronics is the application of electronics to the control and conversion of electric power. The first high-power electronic devices were made using mercury-arc valves. In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission and processing of signals and data, substantial amounts of electrical energy are processed in power electronics. An AC/DC converter (rectifier) is the most typical power electronics device found in many consumer electronic devices, e.g. television sets, personal computers, battery chargers, etc. The power range is typically from tens of watts to several hundred watts. In industry, a common application is the Adjustable-speed drive, variable speed drive (VSD) that is used to control an induction motor. The power range of VSDs starts from a few hundred watts and ends at tens ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
_8.5.8.1.c.svg "Click for more on -> Thyristor")
