A gate turn-off thyristor (GTO) is a special type of
thyristor
A thyristor () is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current ...
, which is a high-power (.e.g. 1200V AC)
semiconductor device. It was invented by
General Electric
General Electric Company (GE) is an American multinational conglomerate founded in 1892, and incorporated in New York state and headquartered in Boston. The company operated in sectors including healthcare, aviation, power, renewable en ...
.
GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
Device description
![GTO thyristor equivalent](https://upload.wikimedia.org/wikipedia/commons/7/70/GTO_thyristor_equivalent.svg)
Normal thyristors (
silicon-controlled rectifier
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four ...
s) are not fully controllable switches (a "fully controllable switch" can be turned on and off at will). Thyristors can only be turned on using the gate lead, but cannot be turned off using the gate lead. Thyristors are switched on by a
gate signal
A gate or gateway is a point of entry to or from a space enclosed by walls. The word derived from old Norse "gat" meaning road or path; But other terms include ''yett and port''. The concept originally referred to the gap or hole in the wall ...
, but even after the gate signal is de-asserted (removed, reverse biased), the thyristor remains in the on state until a turn-off condition occurs (which can be the application of a reverse voltage to the terminals or a decrease of the forward current below a certain threshold value known as the "holding current"). Thus, a thyristor behaves like a normal
semiconductor diode
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.
A diode ...
after it is turned on, or "fired".
The GTO can be turned on by a gate signal and can also be turned off by a gate signal of negative polarity.
Turn on is accomplished by a "positive current" pulse between the gate and cathode terminals. As the gate-cathode behaves like
PN junction PN may refer to:
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, there will be some relatively small voltage between the terminals. The turn-on phenomenon in GTO is, however, not as reliable as an SCR (
thyristor
A thyristor () is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current ...
), and small positive gate current must be maintained even after turn on to improve reliability.
Turn off is accomplished by a "negative voltage" pulse between the gate and cathode terminals. Some of the forward current (about one-third to one-fifth) is "stolen" and used to induce a cathode-gate voltage, which in turn causes the forward current to fall and the GTO will switch off (transitioning to the "blocking" state).
GTO thyristors suffer from long switch-off times, whereby after the forward current falls, there is a long tail time where residual current continues to flow until all remaining charge from the device is taken away. This restricts the maximum switching
frequency
Frequency is the number of occurrences of a repeating event per unit of time. It is also occasionally referred to as ''temporal frequency'' for clarity, and is distinct from ''angular frequency''. Frequency is measured in hertz (Hz) which is eq ...
to about 1 kHz. It may be noted, however, that the turn-off time of a GTO is approximately ten times faster than that of a comparable SCR.
To assist with the turn-off process, GTO thyristors are usually constructed from a large number (hundreds or thousands) of small thyristor cells connected in parallel.
A ''distributed buffer gate turn-off thyristor'' (DB-GTO) is a
thyristor
A thyristor () is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current ...
with additional PN layers in the drift region to reshape the field profile and increase the voltage blocked in the off state. Compared to a typical PNPN structure of a conventional thyristor, the DB-GTO thyristor has a PN–PN–PN structure.
Reverse bias
GTO thyristors are available with or without reverse blocking capability. Reverse blocking capability adds to the forward voltage drop because of the need to have a long, low doped P1 region.
GTO thyristors capable of blocking reverse voltage are known as Symmetrical GTO thyristors, abbreviated S-GTO. Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same. The typical application for symmetrical GTO thyristors is in current source inverter.
GTO thyristors incapable of blocking reverse voltage are known as asymmetrical GTO thyristors, abbreviated A-GTO, and are generally more common than Symmetrical GTO thyristors. They typically have a
reverse breakdown rating in the tens of volts. A-GTO thyristors are used where either a reverse conducting diode is applied in parallel (for example, in voltage source inverters) or where reverse voltage would never occur (for example, in
switching power supplies or DC traction choppers).
GTO thyristors can be fabricated with a reverse conducting diode in the same package. These are known as RCGTO, for Reverse Conducting GTO thyristor.
Safe operating area
Unlike the
insulated gate bipolar transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating lay ...
(IGBT), the GTO thyristor requires external devices ("
snubber
A snubber is a device used to suppress ("snub") a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems (caused by for example water hammer) or excess force or rapid movement in mechanical systems.
Ele ...
circuits") to shape the turn on and turn off currents to prevent device destruction.
During turn on, the device has a maximum dI/dt rating limiting the rise of current. This is to allow the entire bulk of the device to reach turn on before full current is reached. If this rating is exceeded, the area of the device nearest the gate contacts will overheat and melt from over current. The rate of dI/dt is usually controlled by adding a
saturable reactor
A saturable reactor in electrical engineering is a special form of inductor where the magnetic core can be deliberately saturated by a direct electric current in a control winding. Once saturated, the inductance of the saturable reactor drops dr ...
(turn-on snubber), although turn-on dI/dt is a less serious constraint with GTO thyristors than it is with normal thyristors, because of the way the GTO is constructed from many small thyristor cells in parallel. Reset of the saturable reactor usually places a minimum off time requirement on GTO based circuits.
During turn off, the forward voltage of the device must be limited until the current tails off. The limit is usually around 20% of the forward blocking voltage rating. If the voltage rises too fast at turn off, not all of the device will turn off and the GTO will fail, often explosively, due to the high voltage and current focused on a small portion of the device. Substantial
snubber
A snubber is a device used to suppress ("snub") a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems (caused by for example water hammer) or excess force or rapid movement in mechanical systems.
Ele ...
circuits are added around the device to limit the rise of voltage at turn off. Resetting the snubber circuit usually places a minimum on time requirement on GTO based circuits.
The minimum on and off time is handled in DC motor chopper circuits by using a variable switching frequency at the lowest and highest duty cycle. This is observable in traction applications where the frequency will ramp up as the motor starts, then the frequency stays constant over most of the speed ranges, then the frequency drops back down to zero at full speed.
Applications
The main applications are in variable-speed motor drives, high-power inverters, and
traction. GTOs are increasingly being replaced by
integrated gate-commutated thyristors (IGCT), which are an evolutionary development of the GTO, and
insulated-gate bipolar transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating lay ...
s (IGBT), which are members of the
transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch ...
family.
They are also used in the starter circuits for
fluoriscent lamps.
References
{{Reflist
* Shah, P. B. Electronics Letters, vol. 36, p. 2108, (2000).
* Shah, P. B., Geil, B. R., Ervin, M. E. et al. IEEE Trans. Power Elect., vol. 17, p. 1073, (2002).
Solid state switches
General Electric inventions