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Mercury Probe
{{distinguish, Exploration of Mercury The mercury probe is an electrical probing device to make rapid, non-destructive contact to a sample for electrical characterization. Its primary application is semiconductor measurements where otherwise time-consuming metallizations or photolithographic processing are required to make contact to a sample. These processing steps usually take hours and have to be avoided where possible to reduce device processing times. The mercury probe applies mercury contacts of well-defined areas to a flat sample. The nature of the mercury-sample contacts and the instrumentation connected to the mercury probe define the application. If the mercury-sample contact is ohmic (non-rectifying) then current-voltage instrumentation can be used to measure resistance, leakage currents, or current-voltage characteristics. Resistance can be measured on bulk samples or on thin films. The thin films can be composed of any material that does not react with mercury. M ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photolithographic
In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate. The photoresist either breaks down or hardens where it is exposed to light. The patterned film is then created by removing the softer parts of the coating with appropriate solvents. Conventional photoresists typically consists of three components: resin, sensitizer, and solvent. Photolithography processes can be classified according to the type of light used, such as ultraviolet, deep ultraviolet, extreme ultraviolet, or X-ray. The wavelength of light used determines the minimum feature si ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Resistance
The electrical resistance of an object is a measure of its opposition to the flow of electric current. Its reciprocal quantity is , measuring the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with mechanical friction. The SI unit of electrical resistance is the ohm (), while electrical conductance is measured in siemens (S) (formerly called the 'mho' and then represented by ). The resistance of an object depends in large part on the material it is made of. Objects made of electrical insulators like rubber tend to have very high resistance and low conductance, while objects made of electrical conductors like metals tend to have very low resistance and high conductance. This relationship is quantified by resistivity or conductivity. The nature of a material is not the only factor in resistance and conductance, however; it also depends on the size and shape of an object because these properties are extensive rather than intens ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxial
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Barrier
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor. Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact. Physics of formation When a metal is put in direct contact with a semiconductor, a so called Schottky barrier can be formed, leading to a rectifying behavior of the electrical contact. This happens both when the semiconductor is n-type and its work function is smaller than the work function of the metal, and when the semic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate
A gate or gateway is a point of entry to or from a space enclosed by walls. The word derived from old Norse "gat" meaning road or path; But other terms include ''yett and port''. The concept originally referred to the gap or hole in the wall or fence, rather than a barrier which closed it. Gates may prevent or control the entry or exit of individuals, or they may be merely decorative. The moving part or parts of a gateway may be considered "doors", as they are fixed at one side whilst opening and closing like one. A gate may have a latch that can be raised and lowered to both open a gate or prevent it from swinging. Locks are also used on gates to increase the security. Larger gates can be used for a whole building, such as a castle or fortified town. Actual doors can also be considered gates when they are used to block entry as prevalent within a gatehouse. Today, many gate doors are opened by an automated gate operator. Purpose-specific types of gate * Baby gate a safety ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Permittivity
In electromagnetism, the absolute permittivity, often simply called permittivity and denoted by the Greek letter ''ε'' ( epsilon), is a measure of the electric polarizability of a dielectric. A material with high permittivity polarizes more in response to an applied electric field than a material with low permittivity, thereby storing more energy in the material. In electrostatics, the permittivity plays an important role in determining the capacitance of a capacitor. In the simplest case, the electric displacement field D resulting from an applied electric field E is :\mathbf = \varepsilon \mathbf. More generally, the permittivity is a thermodynamic function of state. It can depend on the frequency, magnitude, and direction of the applied field. The SI unit for permittivity is farad per meter (F/m). The permittivity is often represented by the relative permittivity ''ε''r which is the ratio of the absolute permittivity ''ε'' and the vacuum permittivity ''ε''0 :\kappa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrowetting
Electrowetting is the modification of the wetting properties of a surface (which is typically hydrophobic) with an applied electric field. History The electrowetting of mercury and other liquids on variably charged surfaces was probably first explained by Gabriel Lippmann in 1875 and was certainly observed much earlier. A. N. Frumkin used surface charge to change the shape of water drops in 1936. The term electrowetting was first introduced in 1981 by G. Beni and S. Hackwood to describe an effect proposed for designing a new type of display device for which they received a patent. The use of a "fluid transistor" in microfluidic circuits for manipulating chemical and biological fluids was first investigated by J. Brown in 1980 and later funded in 1984–1988 under NSF Grants 8760730 & 8822197, employing insulating dielectric and hydrophobic layer(s) (EWOD), immiscible fluids, DC or RF power; and mass arrays of miniature interleaved (saw tooth) electrodes with large or matching Indi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transconductance
Transconductance (for transfer conductance), also infrequently called mutual conductance, is the electrical characteristic relating the current through the output of a device to the voltage across the input of a device. Conductance is the reciprocal of resistance. Transadmittance (or transfer admittance) is the AC equivalent of transconductance. Definition Transconductance is very often denoted as a conductance, ''g''m, with a subscript, m, for ''mutual''. It is defined as follows: :g_m = \frac For small signal alternating current, the definition is simpler: :g_m = \frac The SI unit for transconductance is the siemens, with the symbol S, as in conductance. Transresistance Transresistance (for transfer resistance), also infrequently referred to as mutual resistance, is the dual of transconductance. It refers to the ratio between a change of the voltage at two output points and a related change of current through two input points, and is notated as ''r''m: :r_m = \frac ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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