Maximum Activate Count
Row hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cell (computing), memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not memory address, addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times. The row hammer effect has been used in some privilege escalation computer security exploit (computer security), exploits, and network-based attacks are also theoretically possible. Different hardware-based techniques exist to prevent the row hammer effect from occurring, including required support in some central processing unit, processors and types ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Dynamic Random-access Memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Binary Value
A binary number is a number expressed in the base-2 numeral system or binary numeral system, a method of mathematical expression which uses only two symbols: typically "0" (zero) and "1" ( one). The base-2 numeral system is a positional notation with a radix of 2. Each digit is referred to as a bit, or binary digit. Because of its straightforward implementation in digital electronic circuitry using logic gates, the binary system is used by almost all modern computers and computer-based devices, as a preferred system of use, over various other human techniques of communication, because of the simplicity of the language and the noise immunity in physical implementation. History The modern binary number system was studied in Europe in the 16th and 17th centuries by Thomas Harriot, Juan Caramuel y Lobkowitz, and Gottfried Leibniz. However, systems related to binary numbers have appeared earlier in multiple cultures including ancient Egypt, China, and India. Leibniz was specifica ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Noise Margin
In electrical engineering, noise margin is the maximum voltage amplitude of extraneous signal (electrical engineering), signal that can be algebraically added to the noise-free worst-case input level without causing the output voltage to deviate from the allowable logic voltage level. It is commonly used in at least two contexts as follows: *In communications system engineering, noise margin is the ratio by which the signal exceeds the minimum acceptable amount. It is normally measured in decibels. *In a digital circuit, the noise margin is the amount by which the signal exceeds the threshold for a proper '0' or '1'. For example, a digital circuit might be designed to swing between 0.0 and 1.2 volts, with anything below 0.2 volts considered a '0', and anything above 1.0 volts considered a '1'. Then the noise margin for a '0' would be the amount that a signal is below 0.2 volts, and the noise margin for a '1' would be the amount by which a signal exceeds 1.0 volt. In this case no ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Row Hammer
Row hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times. The row hammer effect has been used in some privilege escalation computer security exploits, and network-based attacks are also theoretically possible. Different hardware-based techniques exist to prevent the row hammer effect from occurring, including required support in some processors and types of DRAM memory modules. Background In dynamic RAM (DRAM), each bit of stored data occu ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Association For Computing Machinery
The Association for Computing Machinery (ACM) is a US-based international learned society for computing. It was founded in 1947 and is the world's largest scientific and educational computing society. The ACM is a non-profit professional membership group, claiming nearly 110,000 student and professional members . Its headquarters are in New York City. The ACM is an umbrella organization for academic and scholarly interests in computer science ( informatics). Its motto is "Advancing Computing as a Science & Profession". History In 1947, a notice was sent to various people: On January 10, 1947, at the Symposium on Large-Scale Digital Calculating Machinery at the Harvard computation Laboratory, Professor Samuel H. Caldwell of Massachusetts Institute of Technology spoke of the need for an association of those interested in computing machinery, and of the need for communication between them. ..After making some inquiries during May and June, we believe there is ample interest to ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Lockstep Memory
Lockstep systems are fault-tolerant computer systems that run the same set of operations at the same time in parallel. The redundancy (duplication) allows error detection and error correction: the output from lockstep operations can be compared to determine if there has been a fault if there are at least two systems (dual modular redundancy), and the error can be automatically corrected if there are at least three systems (triple modular redundancy), via majority vote. The term "lockstep" originates from army usage, where it refers to synchronized walking, in which marchers walk as closely together as physically practical. To run in lockstep, each system is set up to progress from one well-defined state to the next well-defined state. When a new set of inputs reaches the system, it processes them, generates new outputs and updates its state. This set of changes (new inputs, new outputs, new state) is considered to define that step, and must be treated as an atomic transaction; in ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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ECC Memory
Error correction code memory (ECC memory) is a type of computer data storage that uses an error correction code (ECC) to detect and correct n-bit data corruption which occurs in memory. ECC memory is used in most computers where data corruption cannot be tolerated, like industrial control applications, critical databases, and infrastructural memory caches. Typically, ECC memory maintains a memory system immune to single-bit errors: the data that is read from each word is always the same as the data that had been written to it, even if one of the bits actually stored has been flipped to the wrong state. Most non-ECC memory cannot detect errors, although some non-ECC memory with parity support allows detection but not correction. Description Error correction codes protect against undetected data corruption and are used in computers where such corruption is unacceptable, examples being scientific and financial computing applications, or in database and file servers. ECC can als ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Cosmic Ray
Cosmic rays are high-energy particles or clusters of particles (primarily represented by protons or atomic nuclei) that move through space at nearly the speed of light. They originate from the Sun, from outside of the Solar System in our own galaxy, and from distant galaxies. Upon impact with Earth's atmosphere, cosmic rays produce showers of secondary particles, some of which reach the surface, although the bulk is deflected off into space by the magnetosphere or the heliosphere. Cosmic rays were discovered by Victor Hess in 1912 in balloon experiments, for which he was awarded the 1936 Nobel Prize in Physics. Direct measurement of cosmic rays, especially at lower energies, has been possible since the launch of the first satellites in the late 1950s. Particle detectors similar to those used in nuclear and high-energy physics are used on satellites and space probes for research into cosmic rays. Data from the Fermi Space Telescope (2013) have been interpreted as evidenc ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Soft Error
In electronics and computing, a soft error is a type of error where a signal or datum is wrong. Errors may be caused by a defect, usually understood either to be a mistake in design or construction, or a broken component. A soft error is also a signal or datum which is wrong, but is not assumed to imply such a mistake or breakage. After observing a soft error, there is no implication that the system is any less reliable than before. One cause of soft errors is single event upsets from cosmic rays. In a computer's memory system, a soft error changes an instruction in a program or a data value. Soft errors typically can be remedied by cold booting the computer. A soft error will not damage a system's hardware; the only damage is to the data that is being processed. There are two types of soft errors, ''chip-level soft error'' and ''system-level soft error''. Chip-level soft errors occur when particles hit the chip, e.g., when secondary particles from cosmic rays land on the s ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Sense Amplifier
In modern computer memory, a sense amplifier is one of the elements which make up the circuitry on a semiconductor memory chip ( integrated circuit); the term itself dates back to the era of magnetic core memory. A sense amplifier is part of the read circuitry that is used when data is read from the memory; its role is to sense the low power signals from a ''bitline'' that represents a data bit (1 or 0) stored in a memory cell, and amplify the small voltage swing to recognizable logic levels so the data can be interpreted properly by logic outside the memory. Modern sense-amplifier circuits consist of two to six (usually four) transistors, while early sense amplifiers for core memory sometimes contained as many as 13 transistors. There is one sense amplifier for each column of memory cells, so there are usually hundreds or thousands of identical sense amplifiers on a modern memory chip. As such, sense amplifiers are one of the few remaining analog circuits in a computer's memory ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Row Activation
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRA ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Address Decoder
In digital electronics, an address decoder is a binary decoder that has two or more inputs for address bits and one or more outputs for device selection signals. When the address for a particular device appears on the address inputs, the decoder asserts the selection output for that device. A dedicated, single-output address decoder may be incorporated into each device on an address bus, or a single address decoder may serve multiple devices. A single address decoder with n address input bits can serve up to 2n devices. Several members of the 7400 series of integrated circuits can be used as address decoders. For example, when used as an address decoder, the 74154 provides four address inputs and sixteen (i.e., 24) device selector outputs. An address decoder is a particular use of a binary decoder circuit known as a "demultiplexer" or "demux" (the 74154 is commonly called a "4-to-16 demultiplexer"), which has many other uses besides address decoding. Address decoders are fundamenta ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |