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Low-noise Amplifier
A low-noise amplifier (LNA) is an electronic amplifier that amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. An amplifier will increase the power of both the signal and the noise present at its input, but the amplifier will also introduce some additional noise. LNAs are designed to minimize that additional noise. Designers can minimize additional noise by choosing low-noise components, operating points, and circuit topologies. Minimizing additional noise must balance with other design goals such as power gain and impedance matching. LNAs are found in radio communications systems, medical instruments and electronic test equipment. A typical LNA may supply a power gain of 100 (20 decibels (dB)) while decreasing the signal-to-noise ratio by less than a factor of two (a 3 dB noise figure (NF)). Although LNAs are primarily concerned with weak signals that are just above the noise floor, they must also consider the presence of larg ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronic Amplifier
An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the magnitude of a Signal (information theory), signal (a time-varying voltage or Electric current, current). It may increase the power (physics), power significantly, or its main effect may be to boost the voltage or current (power amplifier, power, voltage or current amplifier). It is a two-port network, two-port electronic circuit that uses electric power from a power supply to increase the amplitude of a signal applied to its input terminals, producing a greater amplitude signal at its output. The ratio of output to input voltage, current, or power is termed gain (electronics), gain (voltage, current, or power gain). An amplifier, by definition has gain greater than unity (if the gain is less than unity, the device is an attenuator (electronics), attenuator). An amplifier can either be a separate piece of equipment or an electrical circuit contained within another device. Amp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Friis Formulas For Noise
Friis formula or Friis's formula (sometimes Friis' formula), named after Danish-American electrical engineer Harald T. Friis, is either of two formulas used in telecommunications engineering to calculate the signal-to-noise ratio of a multistage amplifier. One relates to noise factor while the other relates to noise temperature. The Friis formula for noise factor Friis's formula is used to calculate the total noise factor of a cascade of stages, each with its own noise factor and power gain (assuming that the impedances are matched at each stage). The total noise factor can then be used to calculate the total noise figure. The total noise factor is given as where F_i and G_i are the noise factor and available power gain, respectively, of the ''i''-th stage, and ''n'' is the number of stages. Both magnitudes are expressed as ratios, not in decibels. Consequences An important consequence of this formula is that the overall noise figure of a radio receiver is primarily establ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Common Base
In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer or voltage amplifier. In this circuit the emitter terminal of the transistor serves as the input, the collector as the output, and the base is connected to ground, or "common", hence its name. The analogous field-effect transistor circuit is the common-gate amplifier. Applications This arrangement is not very common in low-frequency discrete circuits, where it is usually employed for amplifiers that require an unusually low input impedance, for example to act as a preamplifier for moving-coil microphones. However, it is popular in integrated circuits and in high-frequency amplifiers, for example for VHF and UHF, because its input capacitance does not suffer from the Miller effect, which degrades the bandwidth of the common-emitter configuration, and because of the relatively high is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today. Tunnel diodes have a heavily doped positive-to-negative (P-N) junction that is about 10 nm (100 Å) wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more or le ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Vacuum Tube
A vacuum tube, electron tube, valve (British usage), or tube (North America), is a device that controls electric current flow in a high vacuum between electrodes to which an electric voltage, potential difference has been applied. The type known as a thermionic tube or thermionic valve utilizes thermionic emission of electrons from a hot cathode for fundamental electronic functions such as signal amplifier, amplification and current rectifier, rectification. Non-thermionic types such as a vacuum phototube, however, achieve electron emission through the photoelectric effect, and are used for such purposes as the detection of light intensities. In both types, the electrons are accelerated from the cathode to the anode by the electric field in the tube. The simplest vacuum tube, the diode (i.e. Fleming valve), invented in 1904 by John Ambrose Fleming, contains only a heated electron-emitting cathode and an anode. Electrons can only flow in one direction through the device—fro ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Narrow-band
Narrowband signals are signals that occupy a narrow range of frequencies or that have a small fractional bandwidth. In the audio spectrum, narrowband sounds are sounds that occupy a narrow range of frequencies. In telephony, narrowband is usually considered to cover frequencies 300–3400 Hz, i.e. the voiceband. In radio communications, a narrowband channel is a channel in which the bandwidth of the message does not significantly exceed the channel's coherence bandwidth. In the study of wired channels, ''narrowband'' implies that the channel under consideration is sufficiently narrow that its frequency response can be considered flat. The message bandwidth will therefore be less than the coherence bandwidth of the channel. That is, no channel has perfectly flat fading, but the analysis of many aspects of wireless systems is greatly simplified if flat fading can be assumed. Two-way radio narrowband Two-Way Radio Narrowbanding refers to a U.S. Federal Communications Commissi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Shot Noise
Shot noise or Poisson noise is a type of noise which can be modeled by a Poisson process. In electronics shot noise originates from the discrete nature of electric charge. Shot noise also occurs in photon counting in optical devices, where shot noise is associated with the particle nature of light. Origin In a statistical experiment such as tossing a fair coin and counting the occurrences of heads and tails, the numbers of heads and tails after many throws will differ by only a tiny percentage, while after only a few throws outcomes with a significant excess of heads over tails or vice versa are common; if an experiment with a few throws is repeated over and over, the outcomes will fluctuate a lot. From the law of large numbers, one can show that the relative fluctuations reduce as the reciprocal square root of the number of throws, a result valid for all statistical fluctuations, including shot noise. Shot noise exists because phenomena such as light and electric current co ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
High-electron-mobility Transistor
A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. Like other FETs, HEMTs are used in integrated circuits as digital on-off switches. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Both of these uses are made possible by the FET’s unique current–voltage characteristics. HEMT transistors are able to operate at higher frequenc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Junction Field-Effect Transistor
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is ''pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred to a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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