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Logic Family
In computer engineering, a logic family is one of two related concepts: * A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using one of several different designs, usually with compatible logic levels and power supply characteristics within a family. Many logic families were produced as individual components, each containing one or a few related basic logical functions, which could be used as "building-blocks" to create systems or as so-called "glue" to interconnect more complex integrated circuits. * A logic family may also be a set of techniques used to implement logic within VLSI integrated circuits such as central processors, memories, or other complex functions. Some such logic families use static techniques to minimize design complexity. Other such logic families, such as domino logic, use clocked dynamic techniques to minimize size, power consumption and delay. Before the widespread use of integrated circuits, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Computer Engineering
Computer engineering (CoE or CpE) is a branch of electrical engineering and computer science that integrates several fields of computer science and electronic engineering required to develop computer hardware and software. Computer engineers not only require training in electronic engineering, software design, and hardware-software integration, but also in software engineering. It uses the techniques and principles of electrical engineering and computer science, but also covers areas such as artificial intelligence (AI), robotics, computer networks, computer architecture and operating systems. Computer engineers are involved in many hardware and software aspects of computing, from the design of individual microcontrollers, microprocessors, personal computers, and supercomputers, to circuit design. This field of engineering not only focuses on how computer systems themselves work, yet it also demands them to integrate into the larger picture. Robots are one of the applicatio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Low-voltage Positive Emitter-coupled Logic
In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and its slow turn-off behavior. As the current is steered between two legs of an emitter-coupled pair, ECL is sometimes called ''current-steering logic'' (CSL), ''current-mode logic'' (CML) or ''current-switch emitter-follower'' (CSEF) logic. In ECL, the transistors are never in saturation, the input and output voltages have a small swing (0.8 V), the input impedance is high and the output impedance is low. As a result, the transistors change states quickly, gate delays are low, and the fanout capability is high. In addition, the essentially constant current draw of the differential amplifiers minimises delays and glitches due to supply-line inductance and capacitance, and the complementa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gunning Transceiver Logic
Gunning transceiver logic (GTL) is a type of logic signaling used to drive electronic backplane buses. It has a voltage swing between 0.4 volts and 1.2 volts—much lower than that used in TTL and CMOS logic—and symmetrical parallel resistive termination. The maximum signaling frequency is specified to be 100 MHz, although some applications use higher frequencies. GTL is defined by JEDEC standard JESD 8-3 (1993) and was invented by William Gunning while working for Xerox at the Palo Alto Research Center. All Intel front-side buses use GTL. As of 2008, GTL in these FSBs has a maximum frequency of 1.6 GHz. The front-side bus of the Intel Pentium Pro, Pentium II and Pentium III microprocessors uses GTL+ (or GTLP) developed by Fairchild Semiconductor, an upgraded version of GTL which has defined slew rate In electronics, slew rate is defined as the change of voltage or current, or any other electrical quantity, per unit of time. Expressed in SI units, the unit of measurement is vol ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Integrated Injection Logic
Integrated injection logic (IIL, I2L, or I2L) is a class of digital circuits built with multiple collector bipolar junction transistors (BJT). When introduced it had speed comparable to TTL yet was almost as low power as CMOS, making it ideal for use in VLSI (and larger) integrated circuits. The gates can be made smaller with this logic family than with CMOS because complementary transistors are not needed. Although the logic voltage levels are very close (High: 0.7V, Low: 0.2V), I2L has high noise immunity because it operates by current instead of voltage. I2L was developed in 1971 by Siegfried K. Wiedmann and Horst H. Berger who originally called it merged-transistor logic (MTL). A disadvantage of this logic family is that the gates draw power when not switching unlike with CMOS. Construction The I2L inverter gate is constructed with a PNP common base current source transistor and an NPN common emitter open collector inverter transistor (i.e. they are connected to the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
BiCMOS
Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal-oxide-semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions. Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is excellent for constructing large numbers of low-power logic gates. In a BiCMOS process the doping profile and other process features may be tilted to favour either the CMOS or the bipolar devices. For example GlobalFoundries offer a basic 180 nm BiCMOS7WL process and several ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
BiMOS
Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal-oxide-semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions. Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is excellent for constructing large numbers of low-power logic gates. In a BiCMOS process the doping profile and other process features may be tilted to favour either the CMOS or the bipolar devices. For example GlobalFoundries offer a basic 180 nm BiCMOS7WL process and several ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark "COS-MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
HMOS
In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS (n-type metal-oxide semiconductor) logic families that needed more than one different power supply voltage. Although manufacturing these integrated circuits required additional processing steps, improved switching speed and the elimination of the extra power supply made this logic family the preferred choice for many microprocessors and other logic elements. Depletion-mode n-type MOSFETs as load transistors allow single voltage operation and achieve greater speed than possible with pure enhancement-load devices. This is partly because the depletion-mode MOSFETs can be a better current source approximation than the simpler enhancement-mode transistor can, especially when no extra voltage is available (one of the reasons early PMOS and NMOS chips demanded several voltages). The inclusion of depletion-mode NMOS transistors in the manuf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion-load NMOS Logic
In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS (n-type metal-oxide semiconductor) logic families that needed more than one different power supply voltage. Although manufacturing these integrated circuits required additional processing steps, improved switching speed and the elimination of the extra power supply made this logic family the preferred choice for many microprocessors and other logic elements. Depletion-mode n-type MOSFETs as load transistors allow single voltage operation and achieve greater speed than possible with pure enhancement-load devices. This is partly because the depletion-mode MOSFETs can be a better current source approximation than the simpler enhancement-mode transistor can, especially when no extra voltage is available (one of the reasons early PMOS and NMOS chips demanded several voltages). The inclusion of depletion-mode NMOS transistors in the manuf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NMOS Logic
N-type metal-oxide-semiconductor logic uses n-type (-) MOSFETs (metal-oxide-semiconductor field-effect transistors) to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type "source" and "drain" terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. For many years, NMOS circuits were much faster than comparable PMOS and CMOS circuits, which had to use much slower p-channel transistors. It was also easier to manufacture NMOS than CMOS, as the latter has to implement p-channel transistors in special n-wells on the p-substrate. The major drawback with NMOS (and most other logic families) is that a DC current mus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
PMOS Logic
PMOS or pMOS logic (from p-channel metal–oxide–semiconductor) is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant semiconductor technology for large-scale integrated circuits before being superseded by NMOS and CMOS devices. History and application Mohamed Atalla and Dawon Kahng manufactured the first working MOSFET at Bell Labs in 1959. They fabricated both PMOS and NMOS devices but only the PMOS devices were working. It would be more than a decade before contaminants in the manufacturing process (particularly sodium) could be managed well enough to manufacture practical NMOS devices. Compared to the bipolar junction transistor, the only other device available at the time for use in an integrated circuit, the MOSFET offers a number of advantages: *Given semiconductor device fabrication processes of similar precision, a MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
