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Leakage (electronics)
In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode. In capacitors Gradual loss of energy from a charged capacitor is primarily caused by electronic devices attached to the capacitors, such as transistors or diodes, which conduct a small amount of current even when they are turned off. Even though this off current is an order of magnitude less than the current through the device when it is on, the current still slowly discharges the capacitor. Another contributor to leakage from a capacitor is from the undesired imperfection of some dielectric materials used in capacitors, also known as ''dielectric leakage''. It is a result of the dielectric material not being a perfect insulator and having some non-zero conductivit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronics
The field of electronics is a branch of physics and electrical engineering that deals with the emission, behaviour and effects of electrons using electronic devices. Electronics uses active devices to control electron flow by amplification and rectification, which distinguishes it from classical electrical engineering, which only uses passive effects such as resistance, capacitance and inductance to control electric current flow. Electronics has hugely influenced the development of modern society. The central driving force behind the entire electronics industry is the semiconductor industry sector, which has annual sales of over $481 billion as of 2018. The largest industry sector is e-commerce, which generated over $29 trillion in 2017. History and development Electronics has hugely influenced the development of modern society. The identification of the electron in 1897, along with the subsequent invention of the vacuum tube which could amplify and rectify small ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
N-type Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an ''intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An ''electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An ''electron acceptor'' dopant is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Grid Leak
A grid leak detector is an electronic circuit that demodulates an amplitude modulated alternating current and amplifies the recovered modulating voltage. The circuit utilizes the non-linear cathode to control grid conduction characteristic and the amplification factor of a vacuum tube.H. A. Robinson, "The Operating Characteristics of Vacuum Tube Detectors", Part I, ''QST'', vol. XIV, no. 8, p. 23, Aug. 1930 Invented by Lee De Forest around 1912, it was used as the detector (demodulator) in the first vacuum tube radio receivers until the 1930s. History Early applications of triode tubes (''Audions'') as detectors usually did not include a resistor in the grid circuit. First use of a resistance in the grid circuit of a vacuum tube detector circuit may have been by Sewall Cabot in 1906. Cabot wrote that he made a pencil mark to discharge the grid condenser, after finding that touching the grid terminal of the tube would cause the detector to resume operation after having stop ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SILC (semiconductors)
Stress-induced leakage current (SILC) is an increase in the gate leakage current of a MOSFET, used in semiconductor physics. It occurs due to defects created in the gate oxide The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain ... during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices. Oxide defects The most well-studied defects assisting in the leakage current are those produced by charge trapping in the oxide. This model provides a point of attack and has stimulated researchers to develop methods to decrease the rate of charge trapping by mechanisms such as nitrous oxide (N2O) nitridation of the oxide. Semiconductor device defects {{Electronics-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Catastrophic Failure
A catastrophic failure is a sudden and total failure from which recovery is impossible. Catastrophic failures often lead to cascading systems failure. The term is most commonly used for structural failures, but has often been extended to many other disciplines in which total and irrecoverable loss occurs, such as a head crash occurrence on a hard disk drive. Such failures are investigated using the methods of forensic engineering, which aims to isolate the cause or causes of failure. For example, catastrophic failure can be observed in steam turbine rotor failure, which can occur due to peak stress on the rotor; stress concentration increases up to a point at which it is excessive, leading ultimately to the failure of the disc. In firearms, catastrophic failure usually refers to a rupture or disintegration of the barrel or receiver of the gun when firing it. Some possible causes of this are an out-of-battery gun, an inadequate headspace, the use of incorrect ammunition, the use ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Failure Modes Of Electronics
Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates. Burn-in procedures are used to detect early failures. In semiconductor devices, parasitic structures, irrelevant for normal operation, become important in the context of failures; they can be both a source and protection against failure. Applications such as aerospace systems, life support systems, telecommunications, railway signals, and computers use great numbers of individual electronic componen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Iddq Testing
Iddq testing is a method for testing CMOS integrated circuits for the presence of manufacturing faults. It relies on measuring the supply current (Idd) in the quiescent state (when the circuit is not switching and inputs are held at static values). The current consumed in the state is commonly called Iddq for Idd (quiescent) and hence the name. Iddq testing uses the principle that in a correctly operating quiescent CMOS digital circuit, there is no static current path between the power supply and ground, except for a small amount of leakage. Many common semiconductor manufacturing faults will cause the current to increase by orders of magnitude, which can be easily detected. This has the advantage of checking the chip for many possible faults with one measurement. Another advantage is that it may catch faults that are not found by conventional stuck-at fault test vectors. Iddq testing is somewhat more complex than just measuring the supply current. If a line is shorted to Vdd, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Moore's Law
Moore's law is the observation that the number of transistors in a dense integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship linked to gains from experience in production. The observation is named after Gordon Moore, the co-founder of Fairchild Semiconductor and Intel (and former CEO of the latter), who in 1965 posited a doubling every year in the number of components per integrated circuit, and projected this rate of growth would continue for at least another decade. In 1975, looking forward to the next decade, he revised the forecast to doubling every two years, a compound annual growth rate (CAGR) of 41%. While Moore did not use empirical evidence in forecasting that the historical trend would continue, his prediction held since 1975 and has since become known as a "law". Moore's prediction has been used in the semiconductor industry to g ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dopant
A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently either crystals of a semiconductor such as silicon and germanium for use in solid-state electronics, or transparent crystals for use in the production of various laser types; however, in some cases of the latter, noncrystalline substances such as glass can also be doped with impurities. In solid-state electronics using the proper types and amounts of dopants in semiconductors is what produces the p-type semiconductors and n-type semiconductors that are essential for making transistors and diodes. Transparent crystals Lasing media The procedure of doping tiny amounts of the metals chromium (Cr), ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
High-κ Dielectric
The term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law. Sometimes these materials are called "high-k" (pronounced "high kay"), instead of "high-κ" (high kappa). Need for high-κ materials Silicon dioxide () has been used as a gate oxide material for decades. As metal-oxide-semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per device width), raising device perfor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Strained Silicon
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster. More recent advances include deposition of strained silicon using metalorganic vapor-phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sour ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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