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InGaN
Indium gallium nitride (InGaN, ) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7. Applications LEDs Indium gallium nitride is the light-emitting layer in modern blue and green LEDs and often grown on a GaN buffer on a transparent substrate as, e.g. sapphire or silicon carbide. It has a high heat capacity and its sensitivity to ionizing radiation is low (like other group III nitrides), making it also a potentially suitable material for solar photovoltaic devices, specifically for arrays for satellites. It is theoretically predicted that spinodal decomposition of indium nitride should occur for compositions between 15% and 85%, leadin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (UV) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanorod
In nanotechnology, nanorods are one morphology of nanoscale objects. Each of their dimensions range from 1–100 nm. They may be synthesized from metals or semiconducting materials. Standard aspect ratios (length divided by width) are 3-5. Nanorods are produced by direct chemical synthesis. A combination of ligands act as shape control agents and bond to different facets of the nanorod with different strengths. This allows different faces of the nanorod to grow at different rates, producing an elongated object. One potential application of nanorods is in display technologies, because the reflectivity of the rods can be changed by changing their orientation with an applied electric field. Another application is for microelectromechanical systems (MEMS). Nanorods, along with other noble metal nanoparticles, also function as theragnostic agents. Nanorods absorb in the near IR, and generate heat when excited with IR light. This property has led to the use of nanorods as cance ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diode Laser
The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from infra-red to the UV spectrum. Laser diodes are the most common type of lasers produced, with a wide range of uses that include fiber optic comm ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteris ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Nitride
Indium nitride () is a narrow gap, small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of InN has now been established as ~0.7 eV depending on temperature (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements, m* =0.055 m0. Alloyed with Gallium nitride, GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the sun, solar spectrum can be achieved. The bandgap of InN allows a wavelengths as long as 1900 nanometer, nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: P-type semiconductor, p-type doping of InN and indium-rich InGaN is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Segregation In Materials
In materials science, segregation is the enrichment of atoms, ions, or molecules at a microscopic region in a materials system. While the terms segregation and adsorption are essentially synonymous, in practice, segregation is often used to describe the partitioning of molecular constituents to defects from ''solid'' solutions, whereas adsorption is generally used to describe such partitioning from liquids and gases to surfaces. The molecular-level segregation discussed in this article is distinct from other types of materials phenomena that are often called segregation, such as particle segregation in granular materials, and phase separation or precipitation, wherein molecules are segregated in to macroscopic regions of different compositions. Segregation has many practical consequences, ranging from the formation of soap bubbles, to microstructural engineering in materials science, to the stabilization of colloidal suspensions. Segregation can occur in various materials classes. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Gallium Nitride
Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride. The bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1). AlGaN is used to manufacture light-emitting diodes operating in blue to ultraviolet region, where wavelengths down to 250 nm (far UV) were achieved, and some reports down to 222 nm. It is also used in blue semiconductor lasers. It is also used in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors. AlGaN is often used together with gallium nitride or aluminium nitride, forming heterojunctions. AlGaN layers are commonly grown on Gallium nitride, on sapphire or (111) Si, almost always with additional GaN layers. Safety and toxicity aspects The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Heterostructure
A quantum heterostructure is a heterostructure in a substrate (usually a semiconductor material), where size restricts the movements of the charge carriers forcing them into a quantum confinement. This leads to the formation of a set of discrete energy levels at which the carriers can exist. Quantum heterostructures have sharper density of states than structures of more conventional sizes. Quantum heterostructures are important for fabrication of short-wavelength light-emitting diodes and diode lasers, and for other optoelectronic applications, e.g. high-efficiency photovoltaic cells. Examples of quantum heterostructures confining the carriers in quasi-two, -one and -zero dimensions are: * Quantum wells * Quantum wire In mesoscopic physics, a quantum wire is an electrically conducting wire in which quantum effects influence the transport properties. Usually such effects appear in the dimension of nanometers, so they are also referred to as nanowires. Quantum e ...s * Quantum d ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxy
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronvolt
In physics, an electronvolt (symbol eV, also written electron-volt and electron volt) is the measure of an amount of kinetic energy In physics, the kinetic energy of an object is the energy that it possesses due to its motion. It is defined as the work needed to accelerate a body of a given mass from rest to its stated velocity. Having gained this energy during its acc ... gained by a single electron accelerating from rest through an Voltage, electric potential difference of one volt in vacuum. When used as a Units of energy, unit of energy, the numerical value of 1 eV in joules (symbol J) is equivalent to the numerical value of the Electric charge, charge of an electron in coulombs (symbol C). Under the 2019 redefinition of the SI base units, this sets 1 eV equal to the exact value Historically, the electronvolt was devised as a standard unit of measure through its usefulness in Particle accelerator#Electrostatic particle accelerators, electrostatic particle accel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solar Photovoltaic Cell
A photovoltaic system, also PV system or solar power system, is an electric power system designed to supply usable solar power by means of photovoltaics. It consists of an arrangement of several components, including solar panels to absorb and convert sunlight into electricity, a solar inverter to convert the output from direct to alternating current, as well as mounting, cabling, and other electrical accessories to set up a working system. It may also use a solar tracking system to improve the system's overall performance and include an integrated battery. PV systems convert light directly into electricity, and are not to be confused with other solar technologies, such as concentrated solar power or solar thermal, used for heating and cooling. A solar array only encompasses the ensemble of solar panels, the visible part of the PV system, and does not include all the other hardware, often summarized as balance of system (BOS). PV systems range from small, rooftop-mounted o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
