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Heterostructure Emitter Bipolar Transistor
The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base. This is important as loss of minority carriers from the base to the emitter degrades analog performance. The main difference of the HEBT from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy gap being moved back into the emitter bulk region. Functional Architecture The main advantage of HEBT architecture, compared to the HBT is a simplified fabrication process for the emitter–base junction. In particular the HEBT does not require as tight parametric control during epitaxial growth, that equivalent abrupt or graded emitter structures might. This is very important as it is evident f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Analog Signal
An analog signal or analogue signal (see spelling differences) is any continuous signal representing some other quantity, i.e., ''analogous'' to another quantity. For example, in an analog audio signal, the instantaneous signal voltage varies continuously with the pressure of the sound waves. In contrast, a digital signal represents the original time-varying quantity as a sampled sequence of quantized values which imposes some bandwidth and dynamic range constraints on the representation. The term ''analog signal'' usually refers to electrical signals; however, mechanical, pneumatic, hydraulic and other systems may also convey or be considered analog signals. Representation An analog signal uses some property of the medium to convey the signal's information. For example, an aneroid barometer uses rotary position as the signal to convey pressure information. In an electrical signal, the voltage, current, or frequency of the signal may be varied to represent the informatio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterojunction Bipolar Transistor
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957. Materials The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, alo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterostructure Emitter Bipolar Transistor
The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base. This is important as loss of minority carriers from the base to the emitter degrades analog performance. The main difference of the HEBT from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy gap being moved back into the emitter bulk region. Functional Architecture The main advantage of HEBT architecture, compared to the HBT is a simplified fabrication process for the emitter–base junction. In particular the HEBT does not require as tight parametric control during epitaxial growth, that equivalent abrupt or graded emitter structures might. This is very important as it is evident f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fabrication Process
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxial Growth
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Graded Emitter
Grade most commonly refers to: * Grade (education), a measurement of a student's performance * Grade, the number of the year a student has reached in a given educational stage * Grade (slope), the steepness of a slope Grade or grading may also refer to: Music * Grade (music), a formally assessed level of profiency in a musical instrument * Grade (band), punk rock band * Grades (producer), British electronic dance music producer and DJ Science and technology Biology and medicine * Grading (tumors), a measure of the aggressiveness of a tumor in medicine * The Grading of Recommendations Assessment, Development and Evaluation (GRADE) approach * Evolutionary grade, a paraphyletic group of organisms Geology * Graded bedding, a description of the variation in grain size through a bed in a sedimentary rock * Metamorphic grade, an indicatation of the degree of metamorphism of rocks * Ore grade, a measure that describes the concentration of a valuable natural material in the surroundi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Scanning Ion Mass Spectrometry
Scan may refer to: Acronyms * Schedules for Clinical Assessment in Neuropsychiatry (SCAN), a psychiatric diagnostic tool developed by WHO * Shared Check Authorization Network (SCAN), a database of bad check writers and collection agency for bad checks * Space Communications and Navigation Program (SCaN) * Social Cognitive and Affective Neuroscience (journal) * Scientific content analysis (SCAN), also known as statement analysis Businesses * Scan Furniture, Washington, D.C., US chain * SCAN Health Plan, not-for-profit health care company based in Long Beach, California * Scan AB or Scan Foods UK Ltd, the Swedish and UK subsidiaries of the Finnish HKScan Oyj * Seattle Community Access Network, Seattle, Washington, US TV channel * Scan (company), a software company based in Provo, Utah, US Electronics or computer related * 3D scanning * Counter-scanning, in physical micro and nanotopography measuring instruments like scanning probe microscope * Elevator algorithm (also SCA ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diffusion
Diffusion is the net movement of anything (for example, atoms, ions, molecules, energy) generally from a region of higher concentration to a region of lower concentration. Diffusion is driven by a gradient in Gibbs free energy or chemical potential. It is possible to diffuse "uphill" from a region of lower concentration to a region of higher concentration, like in spinodal decomposition. The concept of diffusion is widely used in many fields, including physics ( particle diffusion), chemistry, biology, sociology, economics, and finance (diffusion of people, ideas, and price values). The central idea of diffusion, however, is common to all of these: a substance or collection undergoing diffusion spreads out from a point or location at which there is a higher concentration of that substance or collection. A gradient is the change in the value of a quantity, for example, concentration, pressure, or temperature with the change in another variable, usually distance. A chan ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Optoelectronic
Optoelectronics (or optronics) is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, ''light'' often includes invisible forms of radiation such as gamma rays, X-rays, ultraviolet and infrared, in addition to visible light. Optoelectronic devices are electrical-to-optical or optical-to-electrical transducers, or instruments that use such devices in their operation. ''Electro-optics'' is often erroneously used as a synonym, but is a wider branch of physics that concerns all interactions between light and electric fields, whether or not they form part of an electronic device. Optoelectronics is based on the quantum mechanical effects of light on electronic materials, especially semiconductors, sometimes in the presence of electric fields. * Photoelectric or photovoltaic effect, used in: ** photodiodes (including solar cells) ** phototransistors ** photomultipl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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