Gallium Phosphide
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Gallium Phosphide
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. GaP has a microhardness of 9450 N/mm2, a Debye temperature of , and a thermal expansion coefficient of 5.3 K−1 at room temperature. Sulfur, silicon or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide has applications in optical systems. Its static dielectric constant is 11.1 at room temperature. Its refractive index varies between ~3.2 and 5.0 across the visible range, which is higher than in most other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, in ...
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Zincblende (crystal Structure)
In crystallography, the cubic (or isometric) crystal system is a crystal system where the Crystal_structure#Unit_cell, unit cell is in the shape of a cube. This is one of the most common and simplest shapes found in crystals and minerals. There are three main varieties of these crystals: *Primitive cubic (abbreviated ''cP'' and alternatively called simple cubic) *Body-centered cubic (abbreviated ''cI'' or bcc) *Face-centered cubic (abbreviated ''cF'' or fcc, and alternatively called Close-packing_of_equal_spheres, ''cubic close-packed'' or ccp) Each is subdivided into other variants listed below. Although the ''unit cells'' in these crystals are conventionally taken to be cubes, the primitive_cell, primitive unit cells often are not. Bravais lattices The three Bravais lattices in the cubic crystal system are: The primitive cubic lattice (cP) consists of one Lattice_(group), lattice point on each corner of the cube; this means each simple cubic unit cell has in total one latt ...
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Tellurium
Tellurium is a chemical element with the symbol Te and atomic number 52. It is a brittle, mildly toxic, rare, silver-white metalloid. Tellurium is chemically related to selenium and sulfur, all three of which are chalcogens. It is occasionally found in native form as elemental crystals. Tellurium is far more common in the Universe as a whole than on Earth. Its extreme rarity in the Earth's crust, comparable to that of platinum, is due partly to its formation of a volatile hydride that caused tellurium to be lost to space as a gas during the hot nebular formation of Earth.Anderson, Don L.; "Chemical Composition of the Mantle" in ''Theory of the Earth'', pp. 147-175 Tellurium-bearing compounds were first discovered in 1782 in a gold mine in Kleinschlatten, Transylvania (now Zlatna, Romania) by Austrian mineralogist Franz-Joseph Müller von Reichenstein, although it was Martin Heinrich Klaproth who named the new element in 1798 after the Latin 'earth'. Gold telluride minerals ar ...
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Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ...
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Zinc Oxide
Zinc oxide is an inorganic compound with the formula . It is a white powder that is insoluble in water. ZnO is used as an additive in numerous materials and products including cosmetics, food supplements, rubbers, plastics, ceramics, glass, cement, lubricants, paints, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, and first-aid tapes. Although it occurs naturally as the mineral zincite, most zinc oxide is produced synthetically. ZnO is a wide-band gap semiconductor of the II-VI semiconductor group. The native doping of the semiconductor due to oxygen vacancies or zinc interstitials is n-type. Other favorable properties include good transparency, high electron mobility, wide band gap, and strong room-temperature luminescence. Those properties make ZnO valuable for a variety of emerging applications: transparent electrodes in liquid crystal displays, energy-saving or heat-protecting windows, and electronics as thin-film transistors and lig ...
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Nitrogen
Nitrogen is the chemical element with the symbol N and atomic number 7. Nitrogen is a nonmetal and the lightest member of group 15 of the periodic table, often called the pnictogens. It is a common element in the universe, estimated at seventh in total abundance in the Milky Way and the Solar System. At standard temperature and pressure, two atoms of the element bond to form N2, a colorless and odorless diatomic gas. N2 forms about 78% of Earth's atmosphere, making it the most abundant uncombined element. Nitrogen occurs in all organisms, primarily in amino acids (and thus proteins), in the nucleic acids ( DNA and RNA) and in the energy transfer molecule adenosine triphosphate. The human body contains about 3% nitrogen by mass, the fourth most abundant element in the body after oxygen, carbon, and hydrogen. The nitrogen cycle describes the movement of the element from the air, into the biosphere and organic compounds, then back into the atmosphere. Many indus ...
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Gallium Arsenide Phosphide
Gallium arsenide phosphide () is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction ''x''. Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with nitrogen (GaAsP:N). See also * Gallium arsenide * Gallium indium arsenide antimonide phosphide * Gallium phosphide * Indium gallium arsenide phosphide * Indium gallium phosphide Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with ... References III-V semiconductors Gallium compounds Arsenides Phosphides III-V compounds Light-emitting ...
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Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (UV) ...
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Zinc Sulfide
Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS. This is the main form of zinc found in nature, where it mainly occurs as the mineral sphalerite. Although this mineral is usually black because of various impurities, the pure material is white, and it is widely used as a pigment. In its dense synthetic form, zinc sulfide can be transparent, and it is used as a window for visible optics and infrared optics. Structure ZnS exists in two main crystalline forms. This dualism is an example of polymorphism. In each form, the coordination geometry at Zn and S is tetrahedral. The more stable cubic form is known also as zinc blende or sphalerite. The hexagonal form is known as the mineral wurtzite, although it also can be produced synthetically.. The transition from the sphalerite form to the wurtzite form occurs at around 1020 Â°C. A tetragonal form is also known as the very rare mineral called polhemusite, with the formula . Applicatio ...
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Diamond
Diamond is a Allotropes of carbon, solid form of the element carbon with its atoms arranged in a crystal structure called diamond cubic. Another solid form of carbon known as graphite is the Chemical stability, chemically stable form of carbon at Standard conditions for temperature and pressure, room temperature and pressure, but diamond is metastable and converts to it at a negligible rate under those conditions. Diamond has the highest Scratch hardness, hardness and thermal conductivity of any natural material, properties that are used in major industrial applications such as cutting and polishing tools. They are also the reason that diamond anvil cells can subject materials to pressures found deep in the Earth. Because the arrangement of atoms in diamond is extremely rigid, few types of impurity can contaminate it (two exceptions are boron and nitrogen). Small numbers of lattice defect, defects or impurities (about one per million of lattice atoms) color diamond blue (bor ...
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Refractive Index
In optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or refracted, when entering a material. This is described by Snell's law of refraction, , where ''θ''1 and ''θ''2 are the angle of incidence and angle of refraction, respectively, of a ray crossing the interface between two media with refractive indices ''n''1 and ''n''2. The refractive indices also determine the amount of light that is reflected when reaching the interface, as well as the critical angle for total internal reflection, their intensity ( Fresnel's equations) and Brewster's angle. The refractive index can be seen as the factor by which the speed and the wavelength of the radiation are reduced with respect to their vacuum values: the speed of light in a medium is , and similarly the wavelength in that medium is , where ''Π...
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Dielectric Constant
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field. Permittivity is a material's property that affects the Coulomb force between two point charges in the material. Relative permittivity is the factor by which the electric field between the charges is decreased relative to vacuum. Likewise, relative permittivity is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has vacuum as its dielectric. Relative permittivity is also commonly known as the dielectric constant, a term still used but deprecated by standards organizations in engineering as well as in chemistry. Definition Relative permittivity is typically denoted as (sometimes ...
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P-type Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an ''intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An ''electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An ''electron acceptor'' dopant is ...
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