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Gallium Manganese Arsenide
Gallium manganese arsenide, chemical formula is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor, gallium arsenide, (chemical formula ), and readily compatible with existing semiconductor technologies. Differently from other dilute magnetic semiconductors, such as the majority of those based on II-VI semiconductors, it is not paramagnetic but ferromagnetic, and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In , the manganese atoms provide a magnetic moment, and each also acts as an acceptor, making it a ''p''-type material. The presence of carriers allows the material to be used for spin-polarized currents. In contrast, many other ferromagnetic magnetic semiconductors are strongly insulating and so do not possess free carriers. is therefore a candidate as a spintronic material. Growth Like other magnetic semiconductors, is formed by doping a standard ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetic Semiconductor
Magnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers ( n- or p-type), practical magnetic semiconductors would also allow control of quantum spin state (up or down). This would theoretically provide near-total spin polarization (as opposed to iron and other metals, which provide only ~50% polarization), which is an important property for spintronics applications, e.g. spin transistors. While many traditional magnetic materials, such as magnetite, are also semiconductors (magnetite is a semimetal semiconductor with bandgap 0.14 eV), materials scientists generally predict that magnetic semiconductors will only find widespread use if they are similar to well-developed semiconductor materials. To that end, dilute magnetic semi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antiferromagnetism
In materials that exhibit antiferromagnetism, the magnetic moments of atoms or molecules, usually related to the spins of electrons, align in a regular pattern with neighboring spins (on different sublattices) pointing in opposite directions. This is, like ferromagnetism and ferrimagnetism, a manifestation of ordered magnetism. The phenomenon of antiferromagnetism was first introduced by Lev Landau in 1933. Generally, antiferromagnetic order may exist at sufficiently low temperatures, but vanishes at and above the Néel temperature – named after Louis Néel, who had first identified this type of magnetic ordering. Above the Néel temperature, the material is typically paramagnetic. Measurement When no external field is applied, the antiferromagnetic structure corresponds to a vanishing total magnetization. In an external magnetic field, a kind of ferrimagnetic behavior may be displayed in the antiferromagnetic phase, with the absolute value of one of the sublattice magneti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electroluminescence
Electroluminescence (EL) is an optical phenomenon, optical and electrical phenomenon, in which a material emits light in response to the passage of an electric current or to a strong electric field. This is distinct from black body light emission resulting from heat (incandescence), a chemical reaction (chemiluminescence), sound (sonoluminescence), or other mechanical action (mechanoluminescence). Mechanism Electroluminescence is the result of radiative recombination of electrons & electron hole, holes in a material, usually a semiconductor. The excited electrons release their energy as photons - light. Prior to recombination, electrons and holes may be separated either by doping (semiconductors), doping the material to form a p-n junction (in semiconductor electroluminescent devices such as light-emitting diodes) or through excitation by impact of high-energy electrons accelerated by a strong electric field (as with the phosphors in electroluminescent displays). It has been r ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Well
A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e., the carriers can only have discrete energy values. A wide variety of electronic quantum well devices have been developed based on the theory of quantum well systems. These devices have found applications in lasers, photodetectors, modulators, and switches for example. Compared to conventional devices, quantum well devices are much faster and operate much more economically and are a point of incredible importance to the technological and telecommunication industries. These quantum well devices a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterostructure
A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials. Manufacture and applications Heterojunction manufacturing generally requires the use of mo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxial
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spin Polarization
Spin polarization is the degree to which the spin, i.e., the intrinsic angular momentum of elementary particles, is aligned with a given direction. This property may pertain to the spin, hence to the magnetic moment, of conduction electrons in ferromagnetic metals, such as iron, giving rise to spin-polarized currents. It may refer to (static) spin waves, preferential correlation of spin orientation with ordered lattices (semiconductors or insulators). It may also pertain to beams of particles, produced for particular aims, such as polarized neutron scattering or muon spin spectroscopy. Spin polarization of electrons or of nuclei, often called simply magnetization, is also produced by the application of a magnetic field. Curie law is used to produce an induction signal in Electron spin resonance (ESR or EPR) and in Nuclear magnetic resonance (NMR). Spin polarization is also important for spintronics, a branch of electronics. Magnetic semiconductors are being researched as possib ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spin (physics)
Spin is a conserved quantity carried by elementary particles, and thus by composite particles (hadrons) and atomic nucleus, atomic nuclei. Spin is one of two types of angular momentum in quantum mechanics, the other being ''orbital angular momentum''. The orbital angular momentum operator is the quantum-mechanical counterpart to the classical angular momentum of orbital revolution and appears when there is periodic structure to its wavefunction as the angle varies. For photons, spin is the quantum-mechanical counterpart of the Polarization (waves), polarization of light; for electrons, the spin has no classical counterpart. The existence of electron spin angular momentum is inferred from experiments, such as the Stern–Gerlach experiment, in which silver atoms were observed to possess two possible discrete angular momenta despite having no orbital angular momentum. The existence of the electron spin can also be inferred theoretically from the spin–statistics theorem and from th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spintronics
Spintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics. Spintronics fundamentally differs from traditional electronics in that, in addition to charge state, electron spins are exploited as a further degree of freedom, with implications in the efficiency of data storage and transfer. Spintronic systems are most often realised in dilute magnetic semiconductors (DMS) and Heusler alloys and are of particular interest in the field of quantum computing and neuromorphic computing. History Spintronics emerged from discoveries in the 1980s concerning spin-dependent electron transport phenomena in solid-state devices. This includes the observa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hysteresis
Hysteresis is the dependence of the state of a system on its history. For example, a magnet may have more than one possible magnetic moment in a given magnetic field, depending on how the field changed in the past. Plots of a single component of the moment often form a loop or hysteresis curve, where there are different values of one variable depending on the direction of change of another variable. This history dependence is the basis of memory in a hard disk drive and the remanence that retains a record of the Earth's magnetic field magnitude in the past. Hysteresis occurs in ferromagnetic and ferroelectric materials, as well as in the deformation of rubber bands and shape-memory alloys and many other natural phenomena. In natural systems it is often associated with irreversible thermodynamic change such as phase transitions and with internal friction; and dissipation is a common side effect. Hysteresis can be found in physics, chemistry, engineering, biology, and economics. I ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hall Effect
The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor that is transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in 1879. A Hall effect can also occur across a void or hole in a semiconductor or metal plate, when current is injected via contacts that lie on the boundary or edge of the void or hole, and the charge flows outside the void or hole, in the metal or semiconductor. This Hall effect becomes observable in a perpendicular applied magnetic field across voltage contacts that lie on the boundary of the void on either side of a line connecting the current contacts. It exhibits apparent sign reversal in comparison to the standard "ordinary Hall effect" in the simply connected specimen, and depends only on the current injected from within the void. Superposition may also be realized in the Hall effect: first imagine the standard ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
