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GaAlAs
Aluminium gallium arsenide (also gallium aluminium arsenide) ( Alx Ga1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The ''x'' in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs. The chemical formula ''AlGaAs'' should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The is related with the bandgap via the and varies bet ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Laser Diode
file:Laser diode chip.jpg, The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create active laser medium, lasing conditions at the diode's p–n junction, junction. Driven by voltage, the doped p–n-transition allows for carrier generation and recombination, recombination of an electron with a electron hole, hole. Due to the drop of the electron from a higher energy level to a lower one, radiation is generated in the form of an emitted photon. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence, and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from the inf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bandgap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in Electrical insulation, insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO, HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
QWIP
A Quantum Well Infrared Photodetector (QWIP) is an infrared photodetector, which uses electronic intersubband transitions in quantum wells to absorb photons. In order to be used for infrared detection, the parameters of the quantum wells in the quantum well infrared photodetector are adjusted so that the energy difference between its first and second Quantized state systems method, quantized states match the incoming infrared photon energy. QWIPs are typically made of gallium arsenide, a material commonly found in smartphones and high-speed communications equipment. Depending on the material and the design of the quantum wells, the energy levels of the QWIP can be tailored to absorb radiation in the Infrared, infrared region from 3 to 20 μm. QWIPs are one of the simplest Quantum mechanics, quantum mechanical device structures that can detect mid-wavelength and long-wavelength infrared radiation. They are known for their stability, high pixel-to-pixel uniformity, and high-pixel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
III-V Compounds
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows op ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Compounds
Gallium compounds are compounds containing the element gallium. These compounds are found primarily in the +3 oxidation state. The +1 oxidation state is also found in some compounds, although it is less common than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be formulated as GaIGaIIICl4; in contrast, the monochloride is unstable above 0 °C, disproportionating into elemental gallium and gallium(III) chloride. Compounds containing Ga–Ga bonds are true gallium(II) compounds, such as GaS (which can be formulated as Ga24+(S2−)2) and the dioxan complex Ga2Cl4(C4H8O2)2.Greenwood and Earnshaw, p. 240 There are also compounds of gallium with negative oxidation states, ranging from −5 to −1, most of these compounds being magnesium gallides (MgxGay). Aqueous chemistry Strong acids dissolve gallium, forming gallium(III) salts such as (gallium nitrate). Aqueous solutions o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Compounds
Aluminium (British and IUPAC spellings) or aluminum ( North American spelling) combines characteristics of pre- and post-transition metals. Since it has few available electrons for metallic bonding, like its heavier group 13 congeners, it has the characteristic physical properties of a post-transition metal, with longer-than-expected interatomic distances.Greenwood and Earnshaw, pp. 222–4 Furthermore, as Al3+ is a small and highly charged cation, it is strongly polarizing and aluminium compounds tend towards covalency;Greenwood and Earnshaw, pp. 224–7 this behaviour is similar to that of beryllium (Be2+), an example of a diagonal relationship.Greenwood and Earnshaw, pp. 112–3 However, unlike all other post-transition metals, the underlying core under aluminium's valence shell is that of the preceding noble gas, whereas for gallium and indium it is that of the preceding noble gas plus a filled d-subshell, and for thallium and nihonium it is that of the preceding noble gas plus f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOVPE
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as light-emitting diodes, its most widespread application. It was first demonstrated in 1967 at North American Aviation (later Rockwell International) Autonetics Division in Anaheim CA by Harold M. Manasevit. Basic principl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Arsine
Arsine (IUPAC name: arsane) is an inorganic compound with the formula As H3. This flammable, pyrophoric, and highly toxic pnictogen hydride gas is one of the simplest compounds of arsenic. Despite its lethality, it finds some applications in the semiconductor industry and for the synthesis of organoarsenic compounds. The term ''arsine'' is commonly used to describe a class of organoarsenic compounds of the formula AsH3−''x''R''x'', where R = aryl or alkyl. For example, As(C6H5)3, called triphenylarsine, is referred to as "an arsine". General properties In its standard state arsine is a colorless, denser-than-air gas that is slightly soluble in water (2% at 20 °C) and in many organic solvents as well. Arsine itself is odorless, but it oxidizes in air and this creates a slight garlic or fish-like scent when the compound is present above 0.5 ppm. This compound is kinetically stable: at room temperature it decomposes only slowly. At temperatures of ca. 230 °C, decomp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Trimethylgallium
Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric units are clearly linked by multiple weak Ga---C interactions, reminiscent of the situation for trimethylindium. Preparation Two forms of TMG are typically investigated: Lewis base adducts or TMG itself. All are prepared by reactions of gallium trichloride with various methylating agents. When the methylation is conducted with methylmagnesium iodide in diethyl ether, the product is the poorly volatile diethyl ether adduct. As noted by TMG discoverers Kraus and Toonder in 1933, the ether ligand is not readily lost, although it may be displaced with liquid ammonia. When the alkylation is conducted with methyl lithium in the presence of a tertiary phosphine the air-stable phosphine adduct is obtained: : Heating the solid phosphin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
