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Furnace Anneal
Furnace annealing is a process used in semiconductor device fabrication which consist of heating multiple semiconductor wafers in order to affect their electrical properties. Heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film to film or film to wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from implants, move dopants or drive dopants from one film into another or from a film into the wafer substrate. During ion implantation process, the crystal substrate is damaged due to bombardment with high energy ions. The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are capable of processing man ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fabrication (semiconductor)
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon Crystalline silicon or (c-Si) Is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconduc ... (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate (materials science), substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping (semiconductor), doping, ion implantation, Etching (microfabrication), etching, thin-film deposition of various materials, and Photolithography, photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and Integrated circuit packaging, packaged as an integrated circuit. History I ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dopant
A dopant, also called a doping agent, is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently either crystals of a semiconductor such as silicon and germanium for use in solid-state electronics, or transparent crystals for use in the production of various laser types; however, in some cases of the latter, noncrystalline substances such as glass can also be doped with impurities. In solid-state electronics using the proper types and amounts of dopants in semiconductors is what produces the p-type semiconductors and n-type semiconductors that are essential for making transistors and diodes. Transparent crystals Lasing media The procedure of doping tiny amounts of the metals chromium (Cr), ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ion Implantation
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (10s of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Rapid Thermal Anneal
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition. Temperature control One of the key challenges in rapid thermal processing is accurate measurement and control of the wafer temperature. Monitoring the ambient with a thermocouple has only recently become feasible, in that the high temperature ramp rates prevent the wafer from coming to thermal equilibrium with the process chamber. One temperature control strategy involves ''in situ'' pyrometry to effect real time control. Used for me ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Rapid Thermal Processing
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition. Temperature control One of the key challenges in rapid thermal processing is accurate measurement and control of the wafer temperature. Monitoring the ambient with a thermocouple has only recently become feasible, in that the high temperature ramp rates prevent the wafer from coming to thermal equilibrium with the process chamber. One temperature control strategy involves ''in situ'' pyrometry to effect real time control. Used for me ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
