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Ferdinand-Braun-Institut
The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is a research institute, which is a member of the Gottfried Wilhelm Leibniz Scientific Community. The institute is located in Berlin at the Wissenschafts- und Wirtschaftsstandort Adlershof (WISTA), its research activity is applied science in the fields of III-V electronics, photonics, integrated quantum technology and III-V technology History The institute arose from the former „Zentralinstitut für Optik und Spektroskopie“ and parts of "Zentralinstitut für Elektronenphysik" der Akademie der Wissenschaften der DDR. Based on a recommendation of the Wissenschaftsrat, it was reestablished on January 1, 1992. The institute is named after Ferdinand Braun (1850–1918), who received the Nobel Prize for physics in 1909 for his contributions on the development of wireless telegraphy. Research The Ferdinand-Braun-Institute conducts research based on III-V semiconductor technology. Applications inclu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ferdinand Braun
Karl Ferdinand Braun (; 6 June 1850 – 20 April 1918) was a German electrical engineer, inventor, physicist and Nobel laureate in physics. Braun contributed significantly to the development of radio and television technology: he shared the 1909 Nobel Prize in Physics with Guglielmo Marconi "for their contributions to the development of wireless telegraphy", was a founder of Telefunken, one of the pioneering communications and television companies, and has been both called the "father of television" (shared with inventors like Paul Gottlieb Nipkow) and the co-father of the radio telegraphy, together with Marconi. Biography Braun was born in Fulda, Germany, and educated at the University of Marburg and received a PhD from the University of Berlin in 1872. In 1874, he discovered that a point-contact metal–semiconductor junction rectifies alternating current. He became director of the Physical Institute and professor of physics at the University of Strassburg in 1895. In 189 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gottfried Wilhelm Leibniz Scientific Community
The Leibniz Association (German: ''Leibniz-Gemeinschaft'' or ''Wissenschaftsgemeinschaft Gottfried Wilhelm Leibniz'') is a union of German non-university research institutes from various disciplines. As of 2020, 96 non-university research institutes and service institutions for science are part of the Leibniz-Gemeinschaft. The fields range from natural science, engineering, and ecology, to economics, other social sciences, spatial science, and humanities. The Leibniz Institutes work in an interdisciplinary fashion, and connect basic and applied science. They cooperate with universities, industry, and other partners in different parts of the world. Taken together, the Leibniz Institutes employ 20,000 people and have a budget of €1.9 billion. Leibniz Institutes are funded publicly to equal parts by the federal government and the Federal states (Bundesländer). Leibniz Association was ranked 3rd in Germany and 56th across the globe. Every Leibniz institution is evaluated by the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterojunction Bipolar Transistor
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957. Materials The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Laser Diode
file:Laser diode chip.jpg, The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create active laser medium, lasing conditions at the diode's p–n junction, junction. Driven by voltage, the doped p–n-transition allows for Carrier generation and recombination, recombination of an electron with a Electron hole, hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from infra-red to the UV spectrum ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Humboldt University Of Berlin
Humboldt-Universität zu Berlin (german: Humboldt-Universität zu Berlin, abbreviated HU Berlin) is a German public research university in the central borough of Mitte in Berlin. It was established by Frederick William III on the initiative of Wilhelm von Humboldt, Johann Gottlieb Fichte and Friedrich Ernst Daniel Schleiermacher as the University of Berlin () in 1809, and opened in 1810, making it the oldest of Berlin's four universities. From 1828 until its closure in 1945, it was named Friedrich Wilhelm University (german: Friedrich-Wilhelms-Universität). During the Cold War, the university found itself in East Berlin and was ''de facto'' split in two when the Free University of Berlin opened in West Berlin. The university received its current name in honour of Alexander and Wilhelm von Humboldt in 1949. The university is divided into nine faculties including its medical school shared with the Freie Universität Berlin. The university has a student enrollment of around 32 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Technische Universität Berlin
The Technical University of Berlin (official name both in English and german: link=no, Technische Universität Berlin, also known as TU Berlin and Berlin Institute of Technology) is a public research university located in Berlin, Germany. It was the first German university to adopt the name "Technische Universität" (Technical University). The university alumni and professor list includes several US National Academies members, two National Medal of Science laureates and ten Nobel Prize laureates. TU Berlin is a member of TU9, an incorporated society of the largest and most notable German institutes of technology and of the Top International Managers in Engineering network, which allows for student exchanges between leading engineering schools. It belongs to the Conference of European Schools for Advanced Engineering Education and Research. The TU Berlin is home of two innovation centers designated by the European Institute of Innovation and Technology. The university is labeled ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
HVPE
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds (MOCVD Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper source materials than in MOCVD, reducing the capital equipment costs, due ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metalorganic Vapor Phase Epitaxy
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reacto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Clean Room
A cleanroom or clean room is an engineered space, which maintains a very low concentration of airborne particulates. It is well isolated, well-controlled from contamination, and actively cleansed. Such rooms are commonly needed for scientific research, and in industrial production for all nanoscale processes, such as semiconductor manufacturing. A cleanroom is designed to keep everything from dust, to airborne organisms, or vaporised particles, away from it, and so from whatever material is being handled inside it. The other way around, a cleanroom can also help keep materials escaping from it. This is often the primary aim in hazardous biology and nuclear work, in pharmaceutics and in virology. Cleanrooms typically come with a cleanliness level quantified by the number of particles per cubic meter at a predetermined molecule measure. The ambient outdoor air in a typical urban area contains 35,000,000 particles for each cubic meter in the size range 0.5 μm and bigger, eq ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hydride Vapour Phase Epitaxy
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds (MOCVD Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper source materials than in MOCVD, reducing the capital equipment costs, du ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metalorganic Vapour-phase Epitaxy
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
