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Epitaxial
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Graphene
Graphene () is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. "Carbon nanostructures for electromagnetic shielding applications", Mohammed Arif Poothanari, Sabu Thomas, et al., ''Industrial Applications of Nanomaterials'', 2019. "Carbon nanostructures include various low-dimensional allotropes of carbon including carbon black (CB), carbon fiber, carbon nanotubes (CNTs), fullerene, and graphene." The name is derived from "graphite" and the suffix -ene, reflecting the fact that the allotrope of carbon contains numerous double bonds. Each atom in a graphene sheet is connecte ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Stranski–Krastanov Growth
Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or Stranski–Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in ''Zeitschrift für Kristallographie'', that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of intense ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Band-gap Engineering
Band-gap engineering is the process of controlling or altering the band gap of a material. This is typically done to semiconductors by controlling the composition of alloys, constructing layered materials with alternating compositions, or by inducing strain either epitaxially or topologically. A band gap is the range in a solid where no electron state can exist. The band gap of insulators is much larger than in semiconductors. Conductors or metals have a much smaller or nonexistent band gap than semiconductors since the valence and conduction bands overlap. Controlling the band gap allows for the creation of desirable electrical properties. Molecular-beam epitaxy (MBE) Molecular-beam epitaxy is a technique used to construct thin epitaxial films of materials ranging from oxides to semiconductors to metals. Different beams of atoms and molecules in an ultra-high vacuum environment are shot onto a nearly atomically clean crystal, creating a layering effect. This is a type of thin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Gallium Indium Phosphide
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, GaInP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared. AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. Formation AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which single crystals cannot 1D view. Another example of heteroepitaxy is gallium nitride (GaN) on sapphire ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CBE Im1
The Most Excellent Order of the British Empire is a British order of chivalry, rewarding contributions to the arts and sciences, work with charitable and welfare organisations, and public service outside the civil service. It was established on 4 June 1917 by King George V and comprises five classes across both civil and military divisions, the most senior two of which make the recipient either a knight if male or dame if female. There is also the related British Empire Medal, whose recipients are affiliated with, but not members of, the order. Recommendations for appointments to the Order of the British Empire were originally made on the nomination of the United Kingdom, the self-governing Dominions of the Empire (later Commonwealth) and the Viceroy of India. Nominations continue today from Commonwealth countries that participate in recommending British honours. Most Commonwealth countries ceased recommendations for appointments to the Order of the British Empire when they ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Chemical Vapor Deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber. Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon ( dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics. The term ''chemical vapour deposition'' was coined 1960 by ''John M. Blocher, Jr.'' who intended to differentiate ''chemic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Physical Vapor Deposition
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacturing of items which require thin films for optical, mechanical, electrical, acoustic or chemical functions. Examples include semiconductor devices such as thin-film solar cells, microelectromechanical devices such as thin film bulk acoustic resonator, aluminized PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools used mainly for scientific purposes have been developed. The source material i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Crystal
A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macroscopic single crystals are usually identifiable by their geometrical shape, consisting of flat faces with specific, characteristic orientations. The scientific study of crystals and crystal formation is known as crystallography. The process of crystal formation via mechanisms of crystal growth is called crystallization or solidification. The word ''crystal'' derives from the Ancient Greek word (), meaning both "ice" and "rock crystal", from (), "icy cold, frost". Examples of large crystals include snowflakes, diamonds, and table salt. Most inorganic solids are not crystals but polycrystals, i.e. many microscopic crystals fused together into a single solid. Polycrystals include most metals, rocks, ceramics, and ice. A third category of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Frank–Van Der Merwe Growth
Frank–Van der Merwe growth (or FM growth) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. It is also known as 'layer-by-layer growth'. It is considered an ideal growth model, requiring perfect lattice matching between the substrate and the layer growing on to it, and it is usually limited to homoepitaxy. For FM growth to occur, the atoms that are to be deposited should be more attracted to the substrate than to each other, which is in contrast to the layer-plus-island growth model. FM growth is the preferred growth model for producing smooth films. It was first described by South African physicist Jan van der Merwe and British physicist Frederick Charles Frank in a series of four papers based on Van der Merwe's PhD research between 1947 and 1949. See also * Epitaxy * Thin films * Molecular-beam epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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