Electronic Personal Dosimeter
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Electronic Personal Dosimeter
The electronic personal dosimeter (EPD) is a modern electronic dosimeter for estimating uptake of ionising radiation dose of the individual wearing it for radiation protection purposes. The electronic personal dosimeter has the advantages over older types that it has a number of sophisticated functions, such as continuous monitoring which allows alarm warnings at preset levels and live readout of dose accumulated. It can be reset to zero after use, and most models allow near field electronic communications for automatic reading and resetting. They are typically worn on the outside of clothing, such as on the chest or torso to represent dose to the whole body. This location monitors exposure of most vital organs and represents the bulk of body mass. These are especially useful in high dose areas where residence time of the wearer is limited due to dose constraints. PIN Dosimeter PIN diodes are used to quantify the radiation dose for military and personnel applications. MO ...
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Silicon Dioxide
Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , most commonly found in nature as quartz and in various living organisms. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and most abundant families of materials, existing as a compound of several minerals and as a synthetic product. Notable examples include fused quartz, fumed silica, silica gel, opal and aerogels. It is used in structural materials, microelectronics (as an electrical insulator), and as components in the food and pharmaceutical industries. Structure In the majority of silicates, the silicon atom shows tetrahedral coordination, with four oxygen atoms surrounding a central Si atomsee 3-D Unit Cell. Thus, SiO2 forms 3-dimensional network solids in which each silicon atom is covalently bonded in a tetrahedral manner to 4 oxygen atoms. In contrast, CO2 is a linear molecule. The starkly different structures of the dioxid ...
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Film Badge Dosimeter
A film badge dosimeter or film badge is a personal dosimeter used for monitoring cumulative radiation dose due to ionizing radiation. The badge consists of two parts: photographic film and a holder. The film emulsion is black and white photographic film with varying grain size to affect its sensitivity to incident radiation such as gamma rays, X-rays and beta particles. After use by the wearer, the film is removed, developed, and examined to measure exposure. When the film is irradiated, an image of the protective case is projected on the film. Lower energy photons are attenuated preferentially by differing absorber materials. This property is used in film dosimetry to identify the energy of radiation to which the dosimeter was exposed. Some film dosimeters have two emulsions, one for low-dose and the other for high-dose measurements. These two emulsions can be on separate film substrates or on either side of a single substrate. Knowing the energy allows for accurate measure ...
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Thermoluminescent Dosimeter
A thermoluminescent dosimeter, or TLD, is a type of radiation dosimeter, consisting of a piece of a thermoluminescent crystalline material inside a radiolucent package. When a thermoluminescent crystal is exposed to ionizing radiation, it absorbs and traps some of the energy of the radiation in its crystal lattice. When heated, the crystal releases the trapped energy in the form of visible light, the intensity of which is proportional to the intensity of the ionizing radiation the crystal was exposed to. A specialized detector measures the intensity of the emitted light, and this measurement is used to calculate the dose of ionizing radiation the crystal was exposed to. Since the crystal density is similar to human soft tissue density, the dose measurement can be used to calculate absorbed dose. Materials exhibiting thermoluminescence in response to ionizing radiation include calcium fluoride, lithium fluoride, calcium sulfate, lithium borate, calcium borate, potassium bromide ...
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Quartz Fiber Dosimeter
A quartz fiber dosimeter, sometimes called a self indicating pocket dosimeter (SIPD) or self reading pocket dosimeter (SRPD) or quartz fibre electrometer (QFE), is a type of radiation dosimeter, a pen-like device that measures the cumulative dose of ionizing radiation received by the device, usually over one work period. It is clipped to a person's clothing, normally a breast pocket for whole body exposure, to measure the user's exposure to radiation. It is now being superseded by more modern dosimeter types such as the Electronic Personal Dosimeter (EPD). Use As with other types of personal radiation dosimeter, it is worn by workers who are occupationally exposed to radiation, so their employers can keep a record of their exposure, to verify that it is below legally prescribed limits. It works by measuring the decrease in electrostatic charge on a metal conductor in an ionization chamber, due to ionization of the air in the chamber by radiation. It was invented in 1937 ...
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Hafnium Dioxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) an ...
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Hafnium Oxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) an ...
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Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ...
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Gate Oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel. Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungste ...
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Dosimeter
A radiation dosimeter is a device that measures dose uptake of external ionizing radiation. It is worn by the person being monitored when used as a personal dosimeter, and is a record of the radiation dose received. Modern electronic personal dosimeters can give a continuous readout of cumulative dose and current dose rate, and can warn the wearer with an audible alarm when a specified dose rate or a cumulative dose is exceeded. Other dosimeters, such as thermoluminescent or film types, require processing after use to reveal the cumulative dose received, and cannot give a current indication of dose while being worn. Personal dosimeters The personal ionising radiation dosimeter is of fundamental importance in the disciplines of radiation dosimetry and radiation health physics and is primarily used to estimate the radiation dose deposited in an individual wearing the device. Ionising radiation damage to the human body is cumulative, and is related to the total dose received, for ...
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MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_con­ti­nuous_current_of_30  surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ...
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