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Everspin Technologies
Everspin Technologies is a public semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. It also licenses its technology for use in embedded MRAM (eMRAM) applications, magnetic sensor applications as well as performs backend foundry services for eMRAM. MRAM has the performance characteristics close to static random-access memory (SRAM) while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. History The path to MRAM began in 1984 when the GMR effect was discovered by Albert Fert and Peter Grünberg. Twelve years later, in 1996, spin-t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Public Company
A public company is a company whose ownership is organized via shares of stock which are intended to be freely traded on a stock exchange or in over-the-counter markets. A public (publicly traded) company can be listed on a stock exchange (listed company), which facilitates the trade of shares, or not (unlisted public company). In some jurisdictions, public companies over a certain size must be listed on an exchange. In most cases, public companies are ''private'' enterprises in the ''private'' sector, and "public" emphasizes their reporting and trading on the public markets. Public companies are formed within the legal systems of particular states, and therefore have associations and formal designations which are distinct and separate in the polity in which they reside. In the United States, for example, a public company is usually a type of corporation (though a corporation need not be a public company), in the United Kingdom it is usually a public limited company (plc), i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ball Grid Array
A ball grid array (BGA) is a type of surface-mount packaging (a chip carrier) used for integrated circuits. BGA packages are used to permanently mount devices such as microprocessors. A BGA can provide more interconnection pins than can be put on a dual in-line or flat package. The whole bottom surface of the device can be used, instead of just the perimeter. The traces connecting the package's leads to the wires or balls which connect the die to package are also on average shorter than with a perimeter-only type, leading to better performance at high speeds. BGAs were introduced in the 1990s and became popular by 2001. Soldering of BGA devices requires precise control and is usually done by automated processes such as in computer-controlled automatic reflow ovens. Description The BGA is descended from the pin grid array (PGA), which is a package with one face covered (or partly covered) with pins in a grid pattern which, in operation, conduct electrical signals betwe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
40 Nanometer
The term die shrink (sometimes optical shrink or process shrink) refers to the scaling of metal-oxide-semiconductor (MOS) devices. The act of shrinking a die is to create a somewhat identical circuit using a more advanced fabrication process, usually involving an advance of lithographic nodes. This reduces overall costs for a chip company, as the absence of major architectural changes to the processor lowers research and development costs while at the same time allowing more processor dies to be manufactured on the same piece of silicon wafer, resulting in less cost per product sold. Details Die shrinks are the key to improving price/performance at semiconductor companies such as Samsung, Intel, TSMC, and SK Hynix, and fabless manufacturers such as AMD (including the former ATI), NVIDIA and MediaTek. Examples in the 2000s include the downscaling of the PlayStation 2's Emotion Engine processor from Sony and Toshiba (from 180 nm CMOS in 2000 to 90 nm CMOS in 2003 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
130 Nanometer
The 130 nanometer (130 nm) process refers to the level of semiconductor process technology that was reached in the 2000–2001 timeframe, by most leading semiconductor companies, like Intel, Texas Instruments, IBM, and TSMC. The origin of the 130 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS). Some of the first CPUs manufactured with this process include Intel Tualatin family of Pentium III processors. Processors using 130 nm manufacturing technology * Motorola PowerPC 7447 and 7457 2002 * IBM Gekko (Nintendo GameCube) * IBM PowerPC G5 970 - October 2002 - June 2003 * Intel Pentium III Tualatin - 2001-06 * Intel Celeron Tualatin-256 - 2001-10-02 * Intel Pentium M Banias - 2003-03-12 * Intel Pentium 4 Northwood - 2002-01-07 * Intel Celeron Northwood-128 - 2002-09-18 * Intel Xeon Prestonia and Gallatin - 2002-02-25 * VIA C3 - 2001 * AMD ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
180 Nanometer
The 180 nm process refers to the level of MOSFET (CMOS) semiconductor process technology that was commercialized around the 1998–2000 timeframe by leading semiconductor companies, starting with TSMC and Fujitsu, then followed by Sony, Toshiba, Intel, AMD, Texas Instruments and IBM. The origin of the 180 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS). Some of the first CPUs manufactured with this process include Intel Coppermine family of Pentium III processors. This was the first technology using a gate length shorter than that of light used for contemporary lithography, which had a wavelength of 193 nm. Some more recent microprocessors and microcontrollers (e.g. PIC) are using this technology because it is typically low cost and does not require upgrading of existing equipment. In 2022, Google sponsored open-source hardware p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark "COS-MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon Crystalline silicon or (c-Si) Is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconduc ... (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate (materials science), substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping (semiconductor), doping, ion implantation, Etching (microfabrication), etching, thin-film deposition of various materials, and Photolithography, photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and Integrated circuit packaging, packaged as an integrated circuit. History I ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Flash Memory
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written to an era ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Random-access Memory
Random-access memory (RAM; ) is a form of computer memory that can be read and changed in any order, typically used to store working Data (computing), data and machine code. A Random access, random-access memory device allows data items to be read (computer), read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older Magnetic tape data storage, magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement. RAM contains multiplexer, multiplexing and demultiplexing circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetic
Magnetism is the class of physical attributes that are mediated by a magnetic field, which refers to the capacity to induce attractive and repulsive phenomena in other entities. Electric currents and the magnetic moments of elementary particles give rise to a magnetic field, which acts on other currents and magnetic moments. Magnetism is one aspect of the combined phenomena of electromagnetism. The most familiar effects occur in ferromagnetic materials, which are strongly attracted by magnetic fields and can be magnetized to become permanent magnets, producing magnetic fields themselves. Demagnetizing a magnet is also possible. Only a few substances are ferromagnetic; the most common ones are iron, cobalt, and nickel and their alloys. The rare-earth metals neodymium and samarium are less common examples. The prefix ' refers to iron because permanent magnetism was first observed in lodestone, a form of natural iron ore called magnetite, Fe3O4. All substances exhibit some type ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Non-volatile Memory
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage or long-term ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
