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Etching (plasma)
Isotropic etching is a method commonly used in semiconductors to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma-phase, although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , most commonly found in nature as quartz and in various living organisms. In many parts of the world, silica is the major constituent of sand. Silica is one ... etching are more often used. Unlike anisotropic etching, isotropic etching does not etch in a single direction, but rather etches in multiple directions within the substrate. Any horizontal component of the etch direction may therefore result in undercutting of patterned areas, and significant changes to device characteristics. Isotropic etching may occur unavoidably, or it may be desirable for process reasons. References {{DEFAULTSORT:Isotro ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Etching (microfabrication)
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride. Orientation-Dependent Etching * KOH pellets dissolved in water (self-heating) * Etch Rate > >> ** KOH has a slower etching orientation for the planes ** You cannot use this KOH photoresist as a etching mask, because the oxide attacks too slowly, so this resist will not survive * Photoresist can be used a etching mask, and the best photoresist for etching is nitride * For example, the etch rate of Si in KOH Depends on Crystallographic Plane * At low temperatur ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Plasma (physics)
Plasma () 1, where \nu_ is the electron gyrofrequency and \nu_ is the electron collision rate. It is often the case that the electrons are magnetized while the ions are not. Magnetized plasmas are ''anisotropic'', meaning that their properties in the direction parallel to the magnetic field are different from those perpendicular to it. While electric fields in plasmas are usually small due to the plasma high conductivity, the electric field associated with a plasma moving with velocity \mathbf in the magnetic field \mathbf is given by the usual Lorentz force, Lorentz formula \mathbf = -\mathbf\times\mathbf, and is not affected by Debye shielding. Mathematical descriptions To completely describe the state of a plasma, all of the particle locations and velocities that describe the electromagnetic field in the plasma region would need to be written down. However, it is generally not practical or necessary to keep track of all the particles in a plasma. Therefore, plasma physicist ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Buffered Oxide Etch
Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF (typically 49% HF in water) etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic Lithography () is a planographic method of printing originally based on the immiscibility of oil and water. The printing is from a stone (lithographic limestone) or a metal plate with a smooth surface. It was invented in 1796 by the German a ... patterning. Buffered oxide etch is commonly used for more controllable etching. Some oxides produce insoluble products in HF solutions. Thus, HCl is often added to BHF solutions in order to dissolve these insoluble products and produce a higher quality etch. A common buffered oxide etc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Dioxide
Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , most commonly found in nature as quartz and in various living organisms. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and most abundant families of materials, existing as a compound of several minerals and as a synthetic product. Notable examples include fused quartz, fumed silica, silica gel, opal and aerogels. It is used in structural materials, microelectronics (as an electrical insulator), and as components in the food and pharmaceutical industries. Structure In the majority of silicates, the silicon atom shows tetrahedral coordination, with four oxygen atoms surrounding a central Si atomsee 3-D Unit Cell. Thus, SiO2 forms 3-dimensional network solids in which each silicon atom is covalently bonded in a tetrahedral manner to 4 oxygen atoms. In contrast, CO2 is a linear molecule. The starkly different structures of the dioxid ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Anisotropy
Anisotropy () is the property of a material which allows it to change or assume different properties in different directions, as opposed to isotropy. It can be defined as a difference, when measured along different axes, in a material's physical or mechanical properties (absorbance, refractive index, conductivity, tensile strength, etc.). An example of anisotropy is light coming through a polarizer. Another is wood, which is easier to split along its grain than across it. Fields of interest Computer graphics In the field of computer graphics, an anisotropic surface changes in appearance as it rotates about its geometric normal, as is the case with velvet. Anisotropic filtering (AF) is a method of enhancing the image quality of textures on surfaces that are far away and steeply angled with respect to the point of view. Older techniques, such as bilinear and trilinear filtering, do not take into account the angle a surface is viewed from, which can result in aliasing or bl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Isotropy
Isotropy is uniformity in all orientations; it is derived . Precise definitions depend on the subject area. Exceptions, or inequalities, are frequently indicated by the prefix ' or ', hence ''anisotropy''. ''Anisotropy'' is also used to describe situations where properties vary systematically, dependent on direction. Isotropic radiation has the same intensity regardless of the direction of measurement, and an isotropic field exerts the same action regardless of how the test particle is oriented. Mathematics Within mathematics, ''isotropy'' has a few different meanings: ; Isotropic manifolds: A manifold is isotropic if the geometry on the manifold is the same regardless of direction. A similar concept is homogeneity. ; Isotropic quadratic form: A quadratic form ''q'' is said to be isotropic if there is a non-zero vector ''v'' such that ; such a ''v'' is an isotropic vector or null vector. In complex geometry, a line through the origin in the direction of an isotropic vector is a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
