|
DDR3 SDRAM
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth (" double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data rates. The DDR3 standard permits DRAM chip capacities of up to 8 gigabits (Gbit), and up to four ranks ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JEDEC
The JEDEC Solid State Technology Association is an independent semiconductor engineering trade organization and standardization body headquartered in Arlington County, Virginia, United States. JEDEC has over 300 members, including some of the world's largest computer companies. Its scope and past activities includes standardization of part numbers, defining an electrostatic discharge (ESD) standard, and leadership in the lead-free manufacturing transition. The origin of JEDEC traces back to 1944, when RMA (subsequently renamed EIA) and NEMA established the Joint Electron Tube Engineering Council (JETEC) to coordinate vacuum tube type numberings. In 1958, with the advent of semiconductor technology, the joint JETEC-activity of EIA and NEMA was renamed into Joint Electron Device Engineering Council. NEMA discontinued its involvement in 1979. In the fall of 1999, JEDEC became a separate trade association under the current name, but maintained an EIA alliance, until EIA ceased o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Core I7
The following is a list of Intel Core i7 brand microprocessors. Introduced in 2008, the Core i7 line of microprocessors are intended to be used by high-end users. Desktop processors Nehalem microarchitecture (1st generation) "Bloomfield" (45 nm) * All models support: MMX, SSE, SSE2, SSE3, SSSE3, SSE4.1, SSE4.2, Enhanced Intel SpeedStep Technology (EIST), Intel 64, XD bit (an NX bit implementation), Intel VT-x, Hyper-threading, Turbo Boost, Smart Cache. * FSB has been replaced with QPI. * Transistors: 731 million * Die size: 263 mm * Steppings: C0, D0 "Lynnfield" (45 nm) * All models support: MMX, SSE, SSE2, SSE3, SSSE3, SSE4.1, SSE4.2, Enhanced Intel SpeedStep Technology (EIST), Intel 64, XD bit (an NX bit implementation), TXT, Intel VT-x, Intel VT-d, Hyper-threading, Turbo Boost, Smart Cache. * Core i7-875K features an unlocked multiplier and does not support Intel TXT and Intel VT-d. * FSB has been replaced with DMI. *Moves the QPI link and PCI ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Timings
Memory timings or RAM timings describe the timing information of a memory module. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to fully execute commands. Executing commands too quickly will result in data corruption and results in system instability. With appropriate time between commands, memory modules/chips can be given the opportunity to fully switch transistors, charge capacitors and correctly signal back information to the memory controller. Because system performance depends on how fast memory can be used, this timing directly affects the performance of the system. The timing of modern synchronous dynamic random-access memory (SDRAM) is commonly indicated using four parameters: CL, TRCD, TRP, and TRAS in units of clock cycles; they are commonly written as four numbers separated with hyphens, ''e.g.'' 7-8-8-24. The fourth (tRAS) is often omitted, or a fifth, the Command rate, sometimes added (normally 2T or 1T, also written 2N, 1N). Th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hertz
The hertz (symbol: Hz) is the unit of frequency in the International System of Units (SI), equivalent to one event (or cycle) per second. The hertz is an SI derived unit whose expression in terms of SI base units is s−1, meaning that one hertz is the reciprocal of one second. It is named after Heinrich Rudolf Hertz (1857–1894), the first person to provide conclusive proof of the existence of electromagnetic waves. Hertz are commonly expressed in multiples: kilohertz (kHz), megahertz (MHz), gigahertz (GHz), terahertz (THz). Some of the unit's most common uses are in the description of periodic waveforms and musical tones, particularly those used in radio- and audio-related applications. It is also used to describe the clock speeds at which computers and other electronics are driven. The units are sometimes also used as a representation of the energy of a photon, via the Planck relation ''E'' = ''hν'', where ''E'' is the photon's energy, ''ν'' is its freq ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Framebuffer
A framebuffer (frame buffer, or sometimes framestore) is a portion of random-access memory (RAM) containing a bitmap that drives a video display. It is a memory buffer containing data representing all the pixels in a complete video frame. Modern video cards contain framebuffer circuitry in their cores. This circuitry converts an in-memory bitmap into a video signal that can be displayed on a computer monitor. In computing, a screen buffer is a part of computer memory used by a computer application for the representation of the content to be shown on the computer display. The screen buffer may also be called the video buffer, the regeneration buffer, or regen buffer for short. Screen buffers should be distinguished from video memory. To this end, the term off-screen buffer is also used. The information in the buffer typically consists of color values for every pixel to be shown on the display. Color values are commonly stored in 1-bit binary (monochrome), 4-bit palettized, 8-bit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Clock Signal
In electronics and especially synchronous digital circuits, a clock signal (historically also known as ''logic beat'') oscillates between a high and a low state and is used like a metronome to coordinate actions of digital circuits. A clock signal is produced by a clock generator. Although more complex arrangements are used, the most common clock signal is in the form of a square wave with a 50% duty cycle, usually with a fixed, constant frequency. Circuits using the clock signal for synchronization may become active at either the rising edge, falling edge, or, in the case of double data rate, both in the rising and in the falling edges of the clock cycle. Digital circuits Most integrated circuits (ICs) of sufficient complexity use a clock signal in order to synchronize different parts of the circuit, cycling at a rate slower than the worst-case internal propagation delays. In some cases, more than one clock cycle is required to perform a predictable action. As ICs become mo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Double Data Rate
In computing, a computer bus operating with double data rate (DDR) transfers data on both the rising and falling edges of the clock signal. This is also known as double pumped, dual-pumped, and double transition. The term toggle mode is used in the context of NAND flash memory. Overview The simplest way to design a clocked electronic circuit is to make it perform one transfer per full cycle (rise and fall) of a clock signal. This, however, requires that the clock signal changes twice per transfer, while the data lines change at most once per transfer. When operating at a high bandwidth, signal integrity limitations constrain the clock frequency. By using both edges of the clock, the data signals operate with the same limiting frequency, thereby doubling the data transmission rate. This technique has been used for microprocessor front-side busses, Ultra-3 SCSI, expansion buses ( AGP, PCI-X), graphics memory (GDDR), main memory (both RDRAM and DDR1 through DDR5), and the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Prefetch Buffer
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any Dynamic RAM, DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''Memory bank, banks'', allowing the device t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Leakage (electronics)
In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode. In capacitors Gradual loss of energy from a charged capacitor is primarily caused by electronic devices attached to the capacitors, such as transistors or diodes, which conduct a small amount of current even when they are turned off. Even though this off current is an order of magnitude less than the current through the device when it is on, the current still slowly discharges the capacitor. Another contributor to leakage from a capacitor is from the undesired imperfection of some dielectric materials used in capacitors, also known as ''dielectric leakage''. It is a result of the dielectric material not being a perfect insulator and having some non-zero conductivit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multigate Device
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Voltage
Voltage, also known as electric pressure, electric tension, or (electric) potential difference, is the difference in electric potential between two points. In a static electric field, it corresponds to the work needed per unit of charge to move a test charge between the two points. In the International System of Units, the derived unit for voltage is named ''volt''. The voltage between points can be caused by the build-up of electric charge (e.g., a capacitor), and from an electromotive force (e.g., electromagnetic induction in generator, inductors, and transformers). On a macroscopic scale, a potential difference can be caused by electrochemical processes (e.g., cells and batteries), the pressure-induced piezoelectric effect, and the thermoelectric effect. A voltmeter can be used to measure the voltage between two points in a system. Often a common reference potential such as the ground of the system is used as one of the points. A voltage can represent either a source ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transfer (computing)
In computer technology, transfers per second and its more common secondary terms gigatransfers per second (abbreviated as GT/s) and megatransfers per second (MT/s) are informal language that refer to the number of operations transferring data that occur in each second in some given data-transfer channel. It is also known as sample rate, i.e. the number of data samples captured per second, each sample normally occurring at the clock edge. The terms are neutral with respect to the method of physically accomplishing each such data-transfer operation; nevertheless, they are most commonly used in the context of transmission of digital data. 1 MT/s is 106 or one million transfers per second; similarly, 1 GT/s means 109, or equivalently in the US/short scale, one billion transfers per second. Units The choice of the symbol ''T'' for ''transfer'' conflicts with the International System of Units, in which ''T'' stands for the tesla unit of magnetic flux density (so "Megatesla ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
.svg "Click for more on -> Core I7")
