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DIMM
A DIMM () (Dual In-line Memory Module), commonly called a RAM stick, comprises a series of dynamic random-access memory integrated circuits. These memory modules are mounted on a printed circuit board and designed for use in personal computers, workstations, printers, and servers. They are the predominant method for adding memory into a computer system. The vast majority of DIMMs are standardized through JEDEC standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and sizes, but generally are one of two lengths - PC which are and laptop (SO-DIMM) which are about half the size at . History DIMMs (Dual In-line Memory Module) were a 1990s upgrade for SIMMs (Single In-line Memory Modules) as Intel P5-based Pentium processors began to gain market share. The Pentium had a 64-bit bus width, which would require SIMMs installed in matched pairs in order to populate the data bus. The processor would then access the two SIMMs in parallel. DIMMs were i ...
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DIMMs
A DIMM () (Dual In-line Memory module, Memory Module), commonly called a RAM stick, comprises a series of dynamic random-access memory integrated circuits. These Memory module, memory modules are mounted on a printed circuit board and designed for use in personal computers, workstations, printer (computing), printers, and Server (computing), servers. They are the predominant method for adding memory into a computer system. The vast majority of DIMMs are standardized through JEDEC memory standards, JEDEC standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and sizes, but generally are one of two lengths - PC which are and laptop (SO-DIMM) which are about half the size at . History DIMMs (Dual In-line Memory Module) were a 1990s upgrade for SIMMs (Single In-line Memory Modules) as Intel P5 (microarchitecture), P5-based Pentium (brand), Pentium processors began to gain market share. The Pentium had a 64-bit bus (computing), bus width, which would r ...
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Fully Buffered DIMM
Fully Buffered DIMM (or FB-DIMM) is a memory technology that can be used to increase reliability and density of memory systems. Unlike the parallel bus architecture of traditional DRAMs, an FB-DIMM has a serial interface between the memory controller and the ''advanced memory buffer'' (AMB). Conventionally, data lines from the memory controller have to be connected to data lines in every DRAM module, i.e. via multidrop buses. As the memory width increases together with the access speed, the signal degrades at the interface between the bus and the device. This limits the speed and memory density, so FB-DIMMs take a different approach to solve the problem. 240-pin DDR2 FB-DIMMs are neither mechanically nor electrically compatible with conventional 240-pin DDR2 DIMMs. As a result, those two DIMM types are notched differently to prevent using the wrong one. As with nearly all RAM specifications, the FB-DIMM specification was published by JEDEC. Technology Fully buffered DIMM arc ...
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DDR3 SDRAM
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth (" double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data rates. The DDR3 standard permits DRAM chip capacities of up to 8 gigabits (Gbit), and up to four ranks ...
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DDR2 SDRAM
Double Data Rate 2 Synchronous Dynamic Random-Access Memory (DDR2 SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It superseded the original DDR SDRAM specification, and was itself superseded by DDR3 SDRAM (launched in 2007). DDR2 DIMMs are neither forward compatible with DDR3 nor backward compatible with DDR. In addition to double pumping the data bus as in DDR SDRAM (transferring data on the rising and falling edges of the bus clock signal), DDR2 allows higher bus speed and requires lower power by running the internal clock at half the speed of the data bus. The two factors combine to produce a total of four data transfers per internal clock cycle. Since the DDR2 internal clock runs at half the DDR external clock rate, DDR2 memory operating at the same external data bus clock rate as DDR results in DDR2 being able to provide the same bandwidth but with better latency. Alternatively, DDR2 memory operating at twice the external data ...
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Memory Module
In computing, a memory module or RAM (random-access memory) stick is a printed circuit board on which memory integrated circuits are mounted. Memory modules permit easy installation and replacement in electronic systems, especially computers such as personal computers, workstations, and servers. The first memory modules were proprietary designs that were specific to a model of computer from a specific manufacturer. Later, memory modules were standardized by organizations such as JEDEC and could be used in any system designed to use them. Types of memory module include: * TransFlash Memory Module * SIMM, a single in-line memory module * DIMM, dual in-line memory module ** Rambus memory modules are a subset of DIMMs, but are normally referred to as RIMMs ** SO-DIMM, small outline DIMM, a smaller version of the DIMM, used in laptops Distinguishing characteristics of computer memory modules include voltage, capacity, speed (i.e., bit rate), and form factor. For economic reasons, the ...
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UniDIMM
UniDIMM (short for Universal DIMM) is a specification for dual in-line memory modules (DIMMs), which are printed circuit boards (PCBs) designed to carry dynamic random-access memory (DRAM) chips. UniDIMMs can be populated with either DDR3 or DDR4 chips, with no support for any additional memory control logic; as a result, the computer's memory controller must support both DDR3 and DDR4 memory standards. The UniDIMM specification was created by Intel for its Skylake microarchitecture, whose integrated memory controller (IMC) supports both DDR3 (more specifically, the DDR3L low-voltage variant) and DDR4 memory technologies. UniDIMM is a SO-DIMM form factor available in two dimensions: for the standard UniDIMM version (the same size as DDR4 SO-DIMMs), and for the low-profile version. UniDIMMs have a 260-pin edge connector, which has the same pin count as the one on DDR4 SO-DIMMs, with the keying notch in a position that prevents incompatible installation by making UniDIMMs phy ...
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DDR4 SDRAM
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth (" double data rate") interface. Released to the market in 2014, it is a variant of dynamic random-access memory (DRAM), of which some have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory. Features The primary advantages of DDR4 over its predecessor, DDR3, include higher module density and lower voltage requirements, coupled with higher data rate transfer speeds. The DDR4 standard allows for DIMMs of up ...
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SDRAM
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''banks'', allowing the device to operate on a memory a ...
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DDR SDRAM
Double Data Rate Synchronous Dynamic Random-Access Memory (DDR SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM. None of its successors are forward or backward compatible with DDR1 SDRAM, meaning DDR2, DDR3, DDR4 and DDR5 memory modules will not work in DDR1-equipped motherboards, and vice versa. Compared to single data rate ( SDR) SDRAM, the DDR SDRAM interface makes higher transfer rates possible by more strict control of the timing of the electrical data and clock signals. Implementations often have to use schemes such as phase-locked loops and self-calibration to reach the required timing accuracy. The interface uses double pumping (transferring data on both the rising and falling edges of the clock signal) to double data bus bandwidth without a corresponding ...
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SIMM
A SIMM (single in-line memory module) is a type of memory module containing random-access memory used in computers from the early 1980s to the early 2000s. It differs from a dual in-line memory module (DIMM), the most predominant form of memory module since the late 1990s, in that the contacts on a SIMM are redundant on both sides of the module. SIMMs were standardised under the JEDEC JESD-21C standard. Most early PC motherboards (8088-based PCs, XTs, and early ATs) used socketed DIP chips for DRAM. As computer memory capacities grew, memory modules were used to save motherboard space and ease memory expansion. Instead of plugging in eight or nine single DIP chips, only one additional memory module was needed to increase the memory of the computer. History SIMMs were invented in 1982 by James J. Parker at Zenith Microcircuits and the first Zenith Microcircuits customer was Wang Laboratories. Wang Laboratories tried to patent it and were granted a patent in April 1987. Th ...
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Extended Data Out RAM
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ...
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Fast Page Mode
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ...
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