|
Cu Interconnects
In semiconductor technology, copper interconnects are interconnects made of copper. They are used in silicon integrated circuits (ICs) to reduce propagation delays and power consumption. Since copper is a better conductor than aluminium, ICs using copper for their interconnects can have interconnects with narrower dimensions, and use less energy to pass electricity through them. Together, these effects lead to ICs with better performance. They were first introduced by IBM, with assistance from Motorola, in 1997. The transition from aluminium to copper required significant developments in fabrication techniques, including radically different methods for patterning the metal as well as the introduction of barrier metal layers to isolate the silicon from potentially damaging copper atoms. Patterning Although some form of volatile copper compound has been known to exist since 1947, with more discovered as the century progressed, none were in industrial use, so copper could not be ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Chemical-mechanical Planarization
Chemical mechanical polishing (CMP) or planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. Description The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary to set up the wafer for the formation of additional circuit elements. For example, CMP can bring the entire surface within the depth of field of a photolithography system, or selectively remove material based on its position. Typical depth-o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carbon Nanotubes In Interconnects
In nanotechnology, carbon nanotube interconnects refer to the proposed use of carbon nanotubes in the interconnects between the elements of an integrated circuit. Carbon nanotubes (CNTs) can be thought of as single atomic layer graphite sheets rolled up to form seamless cylinders. Depending on the direction on which they are rolled, CNTs can be semiconducting or metallic. Metallic carbon nanotubes have been identified as a possible interconnect material for the future technology generations and to replace copper interconnects. Electron transport can go over long nanotube lengths, 1 μm, enabling CNTs to carry very high currents (i.e. up to a current density of 109 A∙ cm−2) with essentially no heating due to nearly one dimensional electronic structure. Despite the current saturation in CNTs at high fields, the mitigation of such effects is possible due to encapsulated nanowires. Carbon nanotubes for interconnects application in Integrated chips have been studied since 2001, ho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electromigration
Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in electronics such as integrated circuits (ICs) decreases, the practical significance of this effect increases. History The phenomenon of electromigration has been known for over 100 years, having been discovered by the French scientist Gerardin. The topic first became of practical interest during the late 1960s when packaged ICs first appeared. The earliest commercially available ICs failed in a mere three weeks of use from runaway electromigration, which led to a major industry effort to correct this problem. The first observation of electromigration in thin films was made by I. Blech.I. Blech: ''Electromigration in Thin Aluminum Fi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Titanium Nitride
Titanium nitride (TiN; sometimes known as Tinite) is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties. Applied as a thin coating, TiN is used to harden and protect cutting and sliding surfaces, for decorative purposes (due to its golden appearance), and as a non-toxic exterior for medical implants. In most applications a coating of less than is applied. Characteristics TiN has a Vickers hardness of 1800–2100, a modulus of elasticity of 251 GPa, a thermal expansion coefficient of 9.35 K−1, and a superconducting transition temperature of 5.6 K. TiN will oxidize at 800 °C in a normal atmosphere. TiN has a brown color, and appears gold when applied as a coating. It is chemically stable at 20 °C, according to laboratory tests, but can be slowly attacked by concentrated acid solutions with rising temperat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Conductivity
Electrical resistivity (also called specific electrical resistance or volume resistivity) is a fundamental property of a material that measures how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter (rho). The SI unit of electrical resistivity is the ohm-meter (Ω⋅m). For example, if a solid cube of material has sheet contacts on two opposite faces, and the resistance between these contacts is , then the resistivity of the material is . Electrical conductivity or specific conductance is the reciprocal of electrical resistivity. It represents a material's ability to conduct electric current. It is commonly signified by the Greek letter ( sigma), but ( kappa) (especially in electrical engineering) and ( gamma) are sometimes used. The SI unit of electrical conductivity is siemens per metre (S/m). Resistivity and conductivity are inte ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Deep-level Trap
Deep-level traps or deep-level defects are a generally undesirable type of electronic defect in semiconductors. They are "deep" in the sense that the energy required to remove an electron or hole from the trap to the valence or conduction band is much larger than the characteristic thermal energy ''kT'', where ''k'' is the Boltzmann constant and ''T'' is the temperature. Deep traps interfere with more useful types of doping by ''compensating'' the dominant charge carrier type, annihilating either free electrons or electron holes depending on which is more prevalent. They also directly interfere with the operation of transistors, light-emitting diodes and other electronic and opto-electronic devices, by offering an intermediate state inside the band gap. Deep-level traps shorten the non-radiative life time of charge carriers, and—through the Shockley–Read–Hall (SRH) process—facilitate recombination of minority carriers, having adverse effects on the semiconductor device p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diffusion
Diffusion is the net movement of anything (for example, atoms, ions, molecules, energy) generally from a region of higher concentration to a region of lower concentration. Diffusion is driven by a gradient in Gibbs free energy or chemical potential. It is possible to diffuse "uphill" from a region of lower concentration to a region of higher concentration, like in spinodal decomposition. The concept of diffusion is widely used in many fields, including physics (particle diffusion), chemistry, biology, sociology, economics, and finance (diffusion of people, ideas, and price values). The central idea of diffusion, however, is common to all of these: a substance or collection undergoing diffusion spreads out from a point or location at which there is a higher concentration of that substance or collection. A gradient is the change in the value of a quantity, for example, concentration, pressure, or temperature with the change in another variable, usually distance. A change in c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Barrier Metal
A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals. It is done to act as a barrier to protect either one of the metals from corrupting the other.. Adhesion of a plated metal layer to its substrate requires a physical interlocking, inter-diffusion of the deposit or a chemical bonding between plate and substrate in order to work. The role of a diffusion barrier is to prevent or to retard the inter-diffusion of the two superposed metals. Therefore, to be effective, a good diffusion barrier requires inertness with respect to adjacent materials. To obtain good adhesion and a diffusion barrier simultaneously, the bonding between layers needs to come from a chemical reaction of limited range at both boundaries. Materials providing good adhesion are not necessarily good diffusion barriers and vice versa. Consequently, there are cases where two or more separate layers must be used to provide a proper interface between substrates. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Via (electronics)
A via (Latin for ''path'' or ''way'') is an electrical connection between copper layers in a printed circuit board. Essentially a via is a small drilled hole that goes through two or more adjacent layers; the hole is plated with copper that forms electrical connection through the insulation that separates the copper layers. Vias are important for PCB manufacturing. This is because the vias are drilled with certain tolerances and may be fabricated off their designated locations, so some allowance for errors in drill position must be made prior to manufacturing or else the manufacturing yield can decrease due to non-conforming boards (according to some reference standard) or even due to failing boards. In addition, regular through hole vias are considered fragile structures as they are long and narrow; the manufacturer must ensure that the vias are plated properly throughout the barrel and this in turn causes several processing steps. In printed circuit boards In printed c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Damascening
Damascening is the art of inlaying different metals into one another—typically, gold or silver into a darkly oxidized steel background—to produce intricate patterns similar to niello. The English term comes from a perceived resemblance to the rich tapestry patterns of damask silk. The term is also used to describe the use of inlaid copper interconnects in integrated circuits. As its name suggests, damascene gets its name from Damascus, Syria and the ancient artisans that created and exported this craft. Background The technique, while also being used on firearms, has a long history in Japan, where it was used to decorate katana fittings, particularly tsuba. Known as zougan (象嵌) in Japanese, it has developed its own subset of terms to describe the particular patterns, although "shippou-zougan" is an enamelling technique which most Westerners would consider closer to champlevé. Damascened-inlay jewelry, especially of Japanese origin, is sometimes referred to as shakudo f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
