Carrier Scattering
Defect types include atom vacancies, adatoms, steps, and kinks that occur most frequently at surfaces due to the finite material size causing crystal discontinuity. What all types of defects have in common, whether surface or bulk defects, is that they produce dangling bonds that have specific electron energy levels different from those of the bulk. This difference occurs because these states cannot be described with periodic Bloch waves due to the change in electron potential energy caused by the missing ion cores just outside the surface. Hence, these are localized states that require separate solutions to the Schrödinger equation so that electron energies can be properly described. The break in periodicity results in a decrease in conductivity due to defect scattering. Electronic energy levels of semiconductor dangling bonds A simpler and more qualitative way of determining dangling bond energy levels is with Harrison diagrams. Metals have non-directional bonding and a small ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Adatoms
An adatom is an atom that lies on a crystal surface, and can be thought of as the opposite of a surface vacancy. This term is used in surface chemistry and epitaxy, when describing single atoms lying on surfaces and surface roughness. The word is a portmanteau of "adsorbed atom". A single atom, a cluster of atoms, or a molecule or cluster of molecules may all be referred to by the general term " adparticle". This is often a thermodynamically unfavorable state. However, cases such as graphene may provide counter-examples. Adatom growth Adatom is short for adsorbed atom. When the atom arrives at a crystal surface, it is adsorbed by the periodic potential of the crystal, thus becoming an adatom. The minima of this potential form a network of adsorption sites on the surface. There are different types of adsorption sites. Each of these sites corresponds to a different structure of the surface. There are five different types of adsorption sites, which are: on a terrace, where th ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Matthiessen's Rule
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of cm2/( V⋅ s). This is different from the SI unit of mobility, m2/( V⋅ s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small numbe ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Density Of States
In solid state physics and condensed matter physics, the density of states (DOS) of a system describes the number of modes per unit frequency range. The density of states is defined as D(E) = N(E)/V , where N(E)\delta E is the number of states in the system of volume V whose energies lie in the range from E to E+\delta E. It is mathematically represented as a distribution by a probability density function, and it is generally an average over the space and time domains of the various states occupied by the system. The density of states is directly related to the dispersion relations of the properties of the system. High DOS at a specific energy level means that many states are available for occupation. Generally, the density of states of matter is continuous. In isolated systems however, such as atoms or molecules in the gas phase, the density distribution is discrete, like a spectral density. Local variations, most often due to distortions of the original system, are often referr ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Van Hove Singularity
A Van Hove singularity is a singularity (non-smooth point) in the density of states (DOS) of a crystalline solid. The wavevectors at which Van Hove singularities occur are often referred to as critical points of the Brillouin zone. For three-dimensional crystals, they take the form of kinks (where the density of states is not differentiable). The most common application of the Van Hove singularity concept comes in the analysis of optical absorption spectra. The occurrence of such singularities was first analyzed by the Belgian physicist Léon Van Hove in 1953 for the case of phonon densities of states. Theory Consider a one-dimensional lattice of ''N'' particle sites, with each particle site separated by distance ''a'', for a total length of ''L'' = ''Na''. Instead of assuming that the waves in this one-dimensional box are standing waves, it is more convenient to adopt periodic boundary conditions: :k=\frac=n\frac where \lambda is wavelength, and ''n'' is an integer. (Positive ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Kronecker Delta
In mathematics, the Kronecker delta (named after Leopold Kronecker) is a function of two variables, usually just non-negative integers. The function is 1 if the variables are equal, and 0 otherwise: \delta_ = \begin 0 &\text i \neq j, \\ 1 &\text i=j. \end or with use of Iverson brackets: \delta_ = =j, where the Kronecker delta is a piecewise function of variables and . For example, , whereas . The Kronecker delta appears naturally in many areas of mathematics, physics and engineering, as a means of compactly expressing its definition above. In linear algebra, the identity matrix has entries equal to the Kronecker delta: I_ = \delta_ where and take the values , and the inner product of vectors can be written as \mathbf\cdot\mathbf = \sum_^n a_\delta_b_ = \sum_^n a_ b_. Here the Euclidean vectors are defined as -tuples: \mathbf = (a_1, a_2, \dots, a_n) and \mathbf= (b_1, b_2, ..., b_n) and the last step is obtained by using the values of the Kronecker delta ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Bose–Einstein Distribution
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Bose–Einstein may refer to: * Bose–Einstein condensate ** Bose–Einstein condensation (network theory) * Bose–Einstein correlations * Bose–Einstein statistics In quantum statistics, Bose–Einstein statistics (B–E statistics) describes one of two possible ways in which a collection of non-interacting, indistinguishable particles may occupy a set of available discrete energy states at thermodynamic e ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Electronic Band Structure
In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called ''band gaps'' or ''forbidden bands''). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules. Band theory has been successfully used to explain many physical properties of solids, such as electrical resistivity and optical absorption, and forms the foundation of the understanding of all solid-state devices (transistors, solar cells, etc.). Why bands and band gaps occur The electrons of a single, isolated atom occupy atomic orbitals each of which has a discrete energy level. When two or more atoms join together to form a molecule, their atomic orbitals overlap and hybridize. Similarly, if a large number ''N'' of identical atoms come ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Phonons
In physics, a phonon is a collective excitation in a periodic, elastic arrangement of atoms or molecules in condensed matter, specifically in solids and some liquids. A type of quasiparticle, a phonon is an excited state in the quantum mechanical quantization of the modes of vibrations for elastic structures of interacting particles. Phonons can be thought of as quantized sound waves, similar to photons as quantized light waves. The study of phonons is an important part of condensed matter physics. They play a major role in many of the physical properties of condensed matter systems, such as thermal conductivity and electrical conductivity, as well as in models of neutron scattering and related effects. The concept of phonons was introduced in 1932 by Soviet physicist Igor Tamm. The name ''phonon'' comes from the Greek word (), which translates to ''sound'' or ''voice'', because long-wavelength phonons give rise to sound. The name is analogous to the word ''photon''. Definiti ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Ionization Energy
Ionization, or Ionisation is the process by which an atom or a molecule acquires a negative or positive charge by gaining or losing electrons, often in conjunction with other chemical changes. The resulting electrically charged atom or molecule is called an ion. Ionization can result from the loss of an electron after collisions with subatomic particles, collisions with other atoms, molecules and ions, or through the interaction with electromagnetic radiation. Heterolytic bond cleavage and heterolytic substitution reactions can result in the formation of ion pairs. Ionization can occur through radioactive decay by the internal conversion process, in which an excited nucleus transfers its energy to one of the inner-shell electrons causing it to be ejected. Uses Everyday examples of gas ionization are such as within a fluorescent lamp or other electrical discharge lamps. It is also used in radiation detectors such as the Geiger-Müller counter or the ionization chamber. The ionizati ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Electron Affinity
The electron affinity (''E''ea) of an atom or molecule is defined as the amount of energy released when an electron attaches to a neutral atom or molecule in the gaseous state to form an anion. ::X(g) + e− → X−(g) + energy Note that this is not the same as the enthalpy change of electron capture ionization, which is defined as negative when energy is released. In other words, the enthalpy change and the electron affinity differ by a negative sign. In solid state physics, the electron affinity for a surface is defined somewhat differently ( see below). Measurement and use of electron affinity This property is used to measure atoms and molecules in the gaseous state only, since in a solid or liquid state their energy levels would be changed by contact with other atoms or molecules. A list of the electron affinities was used by Robert S. Mulliken to develop an electronegativity scale for atoms, equal to the average of the electrons affinity and ionization potential. Other ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Gate Capacitance
Gate capacitance is the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology. In generations of approximately Dennard scaling of MOSFETs, the capacitance per unit area has increased inversely with device dimensions. Since the gate area has gone down by the square of device dimensions, the gate capacitance of a transistor has gone down in direct proportion with device dimensions. With Dennard scaling, the capacitance per unit of gate width has remained approximately constant; this measurement can include gate–source and gate–drain overlap capacitances. Other scalings are not uncommon; the voltages and gate oxide thicknesses have not always decreased as rapidly as device dimensions, so the gate capacitance per unit area has not increas ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |