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Ballistic Transistor (other)
Ballistic transistor may mean: * Ballistic deflection transistor * Ballistic collection transistor The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot. Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers. The ... * any transistor featuring ballistic conduction {{dab ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ballistic Deflection Transistor
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material. They use electromagnetic forces instead of a logic gate, a device used to perform solely on specified inputs, to switch the forces of electrons. The unique design of this transistor includes individual electrons bouncing from wedge-shaped obstacles called deflectors. Initially accelerated by electric field, electrons are then guided on their respective paths by electromagnetic deflection. Electrons are therefore able to travel without being scattered by atoms or defects, thus resulting in improved speed and reduced power consumption. Purpose A ballistic deflection transistor would be significant in acting as both a linear amplifier and a switch for current flow on electronic devices, which could be used to maintain digital logic and memory. A transistor switching speed is greatly affected by how fast ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ballistic Collection Transistor
The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot. Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers. The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers. See also *Ballistic deflection transistor Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material. They use electromagnetic forces instead of a logic gate, a devi ... References Nanoelectronics Transistor types {{Electronics-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |