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Ballistic Collection Transistor
The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot. Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers. The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers. See also *Ballistic deflection transistor Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material. They use electromagnetic forces instead of a logic gate, a devi ... References Nanoelectronics Transistor types {{Electronics-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ballistic Conduction
In mesoscopic physics, ballistic conduction (ballistic transport) is the unimpeded flow (or transport) of charge carriers (usually electrons), or energy-carrying particles, over relatively long distances in a material. In general, the resistivity of a material exists because an electron, while moving inside a medium, is scattered by impurities, defects, thermal fluctuations of ions in a crystalline solid, or, generally, by any freely-moving atom/molecule composing a gas or liquid. Without scattering, electrons simply obey Newton's second law of motion at non-relativistic speeds. The mean free path of a particle can be described as the average length that the particle can travel freely, i.e., before a collision, which could change its momentum. The mean free path can be increased by reducing the number of impurities in a crystal or by lowering its temperature. Ballistic transport is observed when the mean free path of the particle is (much) longer than the dimension of the medium ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Velocity Overshoot
Velocity overshoot is a physical effect resulting in transit times for charge carriers between terminals that are smaller than the time required for emission of an optical phonon. The velocity therefore exceeds the saturation velocity up to three times, which leads to faster field-effect transistor or bipolar transistor switching. The effect is noticeable in the ordinary field-effect transistor for the gates shorter than 100 nm. Ballistic collection transistor The device intentionally designed to benefit from the velocity overshoot is called ballistic collection transistor (not to be mistaken with the ballistic deflection transistor). See also *Ballistic conduction In mesoscopic physics, ballistic conduction (ballistic transport) is the unimpeded flow (or transport) of charge carriers (usually electrons), or energy-carrying particles, over relatively long distances in a material. In general, the resistivity ... References Charge carriers {{CMP-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterojunction Bipolar Transistor
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957. Materials The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nippon Telegraph And Telephone
, commonly known as NTT, is a Japanese telecommunications company headquartered in Tokyo, Japan. Ranked 55th in Fortune Global 500, ''Fortune'' Global 500, NTT is the fourth largest telecommunications company in the world in terms of revenue, as well as the third largest publicly traded company in Japan after Toyota and Sony, as of June 2022. The company is incorporated pursuant to the NTT Law (). The purpose of the company defined by the law is to own all the shares issued by Nippon Telegraph and Telephone East Corporation (NTT East) and Nippon Telegraph and Telephone West Corporation (NTT West) and to ensure proper and stable provision of telecommunications services all over Japan including remote rural areas by these companies as well as to conduct research relating to the telecommunications technologies that will form the foundation for telecommunications. On 1 July 2019, NTT Corporation launched NTT Ltd., an $11 billion de facto holding company business consisting of 28 brand ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
International Journal Of High Speed Electronics And Systems
The ''International Journal of High Speed Electronics and Systems'' was established in 1990 and is published quarterly by World Scientific. It aims to "promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics". Abstracting and indexing The journal is abstracted and indexed in Inspec, Scopus and Compendex. References External links * {{DEFAULTSORT:International Journal Of High Speed Electronics And Systems World Scientific academic journals Academic journals established in 1990 English-language journals Quarterly journals Electronics journals Semiconductor journals ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ballistic Deflection Transistor
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material. They use electromagnetic forces instead of a logic gate, a device used to perform solely on specified inputs, to switch the forces of electrons. The unique design of this transistor includes individual electrons bouncing from wedge-shaped obstacles called deflectors. Initially accelerated by electric field, electrons are then guided on their respective paths by electromagnetic deflection. Electrons are therefore able to travel without being scattered by atoms or defects, thus resulting in improved speed and reduced power consumption. Purpose A ballistic deflection transistor would be significant in acting as both a linear amplifier and a switch for current flow on electronic devices, which could be used to maintain digital logic and memory. A transistor switching speed is greatly affected by how fast ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronics
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
